Modification and Ablation of Semiconductors by Femtosecond Laser Pulses
- Physical and chemical phenomena resulting from irradiation of silicon and indium phosphide with ultrashort laser pulses (~100fs) were investigated with respect to the difference between single- and multiple-pulse treatment. In the single-pulse case, several processes were identified: modification, recrystallization and ablation. All processes exhibit a distinct treshold behaviour. A two photon-absorption coefficient can be determined from a single spatial ablation profile. Accumulation effects were observed for multi-pulse illumination. Different morphological features like bubbles, rippels and microcolumns were found.
Autor*innen: | Jörg KrügerORCiD, Jörn BonseORCiD, Matthias Lenzner |
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Dokumenttyp: | Zeitschriftenartikel |
Veröffentlichungsform: | Graue Literatur |
Sprache: | Englisch |
Titel des übergeordneten Werkes (Englisch): | Recent research developments in applied physics |
Jahr der Erstveröffentlichung: | 2002 |
Verlag: | Transworld Research Network |
Verlagsort: | Trivandrum |
Jahrgang/Band: | 5 |
Ausgabe/Heft: | 2 |
Erste Seite: | 437 |
Letzte Seite: | 461 |
Verfügbarkeit des Dokuments: | Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access") |
Bibliotheksstandort: | Sonderstandort: Publica-Schrank |
Datum der Freischaltung: | 19.02.2016 |
Referierte Publikation: | Nein |