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Dislocations interacting with a pore in an elastically anisotropic single crystal nickel-base superalloy during hot isostatic pressing

  • The formation of pores in CMSX-4 nickel based superalloys is detrimental to the service life of the material. A way to avoid the problem is to treat the superalloys under Hot Isostatic Pressing (HIP), which enables a large volume fraction of pores to be annihilated. This paper aims to understand the contribution of plastic activity related to the gliding of dislocations on the pore annihilation. Simulations based on a phase-field model of dislocation are performed and make it possible to consider the strong anisotropy of the CMSX-4 under HIP conditions in conjunction to the strong elastic heterogeneity introduced by the pore. For pores with a radius of few micrometers, it is shown that edge parts of dislocation lines that present an extra half atomic plane oriented towards the pore are stacked above and under it in the direction which is perpendicular to their slip-planes, causing an increase of the number of dislocation along the four octahedral directions of the FCC single crystalThe formation of pores in CMSX-4 nickel based superalloys is detrimental to the service life of the material. A way to avoid the problem is to treat the superalloys under Hot Isostatic Pressing (HIP), which enables a large volume fraction of pores to be annihilated. This paper aims to understand the contribution of plastic activity related to the gliding of dislocations on the pore annihilation. Simulations based on a phase-field model of dislocation are performed and make it possible to consider the strong anisotropy of the CMSX-4 under HIP conditions in conjunction to the strong elastic heterogeneity introduced by the pore. For pores with a radius of few micrometers, it is shown that edge parts of dislocation lines that present an extra half atomic plane oriented towards the pore are stacked above and under it in the direction which is perpendicular to their slip-planes, causing an increase of the number of dislocation along the four octahedral directions of the FCC single crystal which intersect the pore center. Results are streamlined within the isotropic elastic theory of dislocations. Effects of elastic anisotropy and dislocation reactions are also investigated in order to specify what would be the dislocation configuration around a pore in CMSX-4 under HIP conditions. Notably, the elastic anisotropy is shown to significantly modify the arrangement of dislocations close to the pore equator. Simulations also allow for the characterization of pore/dislocation interactions when dislocations are involved in Low Angle Boundaries as experimentally observed.zeige mehrzeige weniger

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Metadaten
Autor*innen:A. Ruffini, Y. Le Bouar, A. Finel, A. I. Epishin, Bernard FedelichORCiD, Titus Feldmann, B. Viguier, D. Poquillon
Dokumenttyp:Zeitschriftenartikel
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):Computational materials science
Jahr der Erstveröffentlichung:2022
Organisationseinheit der BAM:5 Werkstofftechnik
5 Werkstofftechnik / 5.2 Metallische Hochtemperaturwerkstoffe
5 Werkstofftechnik / 5.5 Materialmodellierung
Verlag:Elsevier
Verlagsort:Amsterdam
Jahrgang/Band:204
Aufsatznummer:111118
Erste Seite:1
Letzte Seite:14
DDC-Klassifikation:Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten
Freie Schlagwörter:Dislocation; HIP; Phase-field; Pore; Superalloys
Themenfelder/Aktivitätsfelder der BAM:Material
Material / Degradation von Werkstoffen
DOI:10.1016/j.commatsci.2021.111118
ISSN:0927-0256
Verfügbarkeit des Dokuments:Datei im Netzwerk der BAM verfügbar ("Closed Access")
Datum der Freischaltung:18.01.2022
Referierte Publikation:Ja
Datum der Eintragung als referierte Publikation:04.07.2022
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