Optical second-harmonic generation (SHG) on semiconductor electrodes by means of femtosecond and nanosecond-pulse lasers
- In situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well belowIn situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well below the damage threshold, but still with sufficient power density, can be applied. (Author)…
Autor*innen: | Wolfgang Kautek, N. Sorg, Jörg KrügerORCiD |
---|---|
Persönliche Herausgeber*innen: | M. Brieger |
Dokumenttyp: | Beitrag zu einem Sammelband |
Veröffentlichungsform: | Verlagsliteratur |
Sprache: | Englisch |
Titel des übergeordneten Werkes (Englisch): | Semiconductor processing and characterization with lasers |
Jahr der Erstveröffentlichung: | 1995 |
Verlag: | Trans Tech Publ. |
Verlagsort: | Aedermannsdorf |
Ausgabe/Heft: | 173/174 |
Erste Seite: | 285 |
Letzte Seite: | 290 |
Freie Schlagwörter: | Etch Process; Femtosecond-Pulse Laser; Fermi-Level Pinning; Interfacial Electronic States; MOS Diode; Nonlinear Electroreflectance; Oxide; SHG; Second-Harmonic Generation; Semiconductors; Silicon; Sub-Picosecond-Pulse Laser |
Veranstaltung: | 1st International Symposium on Semiconductor Processing and Characterization with Lasers - Applications in Photovoltaics |
Veranstaltungsort: | Stuttgart, Germany |
Beginndatum der Veranstaltung: | 1994-04-18 |
Enddatum der Veranstaltung: | 1994-04-20 |
DOI: | 10.4028/www.scientific.net/MSF.173-174.285 |
ISSN: | 0255-5476 |
ISBN: | 0-87849-683-1 |
Bemerkung: | Serientitel: Materials science forum – Series title: Materials science forum |
Verfügbarkeit des Dokuments: | Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access") |
Bibliotheksstandort: | Sonderstandort: Publica-Schrank |
Datum der Freischaltung: | 19.02.2016 |
Referierte Publikation: | Nein |