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Measurement of mole fractions of Cu, In, Ga and Se in Cu(In,Ga)Se2 films

  • CCQM key comparison K-129 for the quantitative analysis of Cu(In,Ga)Se2 (CIGS) films has been performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The objective of this key comparison is to compare the equivalency of the National Metrology Institutes (NMIs) and Designated Institutes (DIs) for the measurement of mole fractions of Cu, In, Ga and Se in a thin CIGS film. The measurand of this key comparison is the average mole fractions of Cu, In, Ga and Se of a test CIGS alloy film in the unit of mole fraction (mol/mol). Mole fraction with the metrological unit of mol/mol can be practically converted to atomic fraction with the unit of at%. In this key comparison, a CIGS film with certified mole fractions was supplied as a reference specimen to determine the relative sensitivity factors (RSFs) of Cu, In, Ga and Se. The mole fractions of the reference specimen were certified by isotope dilution - inductively coupledCCQM key comparison K-129 for the quantitative analysis of Cu(In,Ga)Se2 (CIGS) films has been performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The objective of this key comparison is to compare the equivalency of the National Metrology Institutes (NMIs) and Designated Institutes (DIs) for the measurement of mole fractions of Cu, In, Ga and Se in a thin CIGS film. The measurand of this key comparison is the average mole fractions of Cu, In, Ga and Se of a test CIGS alloy film in the unit of mole fraction (mol/mol). Mole fraction with the metrological unit of mol/mol can be practically converted to atomic fraction with the unit of at%. In this key comparison, a CIGS film with certified mole fractions was supplied as a reference specimen to determine the relative sensitivity factors (RSFs) of Cu, In, Ga and Se. The mole fractions of the reference specimen were certified by isotope dilution - inductively coupled plasma/mass spectrometry (ID-ICP/MS) and are traceable to the SI. A total number counting (TNC) method was recommended as a method to determine the signal intensities of the constituent elements acquired in the depth profiles by Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Seven NMIs and one DI participated in this key comparison. The mole fractions of the CIGS films were measured by depth profiling based-SIMS, AES and XPS. The mole fractions were also measured by non-destructive X-Ray Fluorescence (XRF) Analysis and Electron Probe Micro Analysis (EPMA) with Energy Dispersive X-ray Spectrometry (EDX). In this key comparison, the average degrees of equivalence uncertainties for Cu, In, Ga and Se are 0.0093 mol/mol, 0.0123 mol/mol, 0.0047 mol/mol and 0.0228 mol/mol, respectively. These values are much smaller than that of Fe in a Fe-Ni alloy film in CCQM K-67 (0.0330 mol/mol). This means that the quantification of multi-element alloy films is possible by depth profiling analysis using the TNC method.zeige mehrzeige weniger

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Metadaten
Autoren/innen:K. J. Kim, A. S. Kim, J. S. Jang, J. K. Suh, Thomas Wirth, Vasile-Dan Hodoroaba, Wolfgang Unger, J. R. Araujo, B. S. Archanjo, C. E. Galhardo, J. Damasceno, C. A. Achete, H. Wang, M. Wang, J. Bennett, D. Simons, A. Kurokawa, S. Terauchi, T. Fujimoto, C. Streeck, B. Beckhoff, S. Spencer, A. Shard
Dokumenttyp:Zeitschriftenartikel
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):Metrologia
Jahr der Erstveröffentlichung:2016
Organisationseinheit der BAM:6 Materialschutz und Oberflächentechnik
6 Materialschutz und Oberflächentechnik / 6.1 Oberflächenanalytik und Grenzflächenchemie
Herausgeber (Institution):Institute of Physics
Verlag:IOP Publishing
Jahrgang/Band:53, Technical Supplement
Erste Seite:Article 08011, 1
Letzte Seite:19
DDC-Klassifikation:Naturwissenschaften und Mathematik / Chemie / Analytische Chemie
Freie Schlagwörter:AES; CCQM; CIGS; EPMA; Key comparison; SIMS; XPS; XRF
Themenfelder/Aktivitätsfelder der BAM:Analytical Sciences
Analytical Sciences / Oberflächen- und Grenzflächenanalytik
DOI:https://doi.org/10.1088/0026-1394/53/1A/08011
URL:http://iopscience.iop.org/article/10.1088/0026-1394/53/1A/08011
URL:http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord;UT=WOS:000397826100048
ISSN:0026-1394
ISSN:1681-7575
Verfügbarkeit des Dokuments:Datei im Netzwerk der BAM verfügbar ("Closed Access")
Datum der Freischaltung:04.11.2016
Referierte Publikation:Ja
Datum der Eintragung als referierte Publikation:18.04.2017