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Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells

  • Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopyStructuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold.zeige mehrzeige weniger

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Metadaten
Autoren/innen:M. Richter, C. Schultz, Jörn Bonse, H.-U. Pahl, H. Endert, B. Rau, R. Schlatmann, V. Quaschning, B. Stegemann, F. Fink
Dokumenttyp:Beitrag zu einem Tagungsband
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):26th European photovoltaic solar energy conference and exhibition (Proceedings)
Jahr der Erstveröffentlichung:2011
Erste Seite:2943
Letzte Seite:2946
Freie Schlagwörter:Ablation; CIGS; Incubation; Laser processing; a-Si/my-Si
Veranstaltung:26th European photovoltaic solar energy conference and exhibition
Veranstaltungsort:Hamburg, Germany
Beginndatum der Veranstaltung:05.09.011
Enddatum der Veranstaltung:08.09.2011
DOI:https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8
ISBN:3-936338-27-2
Verfügbarkeit des Dokuments:Datei im Netzwerk der BAM verfügbar ("Closed Access")
Datum der Freischaltung:19.02.2016
Referierte Publikation:Nein