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Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant

  • Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover,Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.zeige mehrzeige weniger

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  • TOWARDS AN INDUSTRIAL LASER DOPING PROCESS.pdf
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Metadaten
Autoren/innen:M. Eberstein, M. Geier, H. Grießmann, U. Partsch, L. Voelkel, R. Böhme, Simone Pentzien, Robert Koter, Guido Mann, Jörn Bonse, Jörg Krüger
Dokumenttyp:Beitrag zu einem Tagungsband
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):26th European photovoltaic solar energy conference and exhibition (Proceedings)
Jahr der Erstveröffentlichung:2011
Erste Seite:1220
Letzte Seite:1223
Freie Schlagwörter:Doping; Laser processing; Multicrystalline silicon; Selective emitter
Veranstaltung:26th European photovoltaic solar energy conference and exhibition
Veranstaltungsort:Hamburg, Germany
Beginndatum der Veranstaltung:05.09.2011
Enddatum der Veranstaltung:08.09.2011
DOI:https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.2
ISBN:3-936338-27-2
Verfügbarkeit des Dokuments:Datei im Netzwerk der BAM verfügbar ("Closed Access")
Datum der Freischaltung:19.02.2016
Referierte Publikation:Nein