M. Eberstein, M. Geier, H. Grießmann, U. Partsch, L. Voelkel, R. Böhme, Simone Pentzien, Robert Koter, Guido Mann, Jörn Bonse, Jörg Krüger
- Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover,Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.…
MetadatenAutor*innen: | M. Eberstein, M. Geier, H. Grießmann, U. Partsch, L. Voelkel, R. Böhme, Simone Pentzien, Robert Koter, Guido Mann, Jörn BonseORCiD, Jörg KrügerORCiD |
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Dokumenttyp: | Beitrag zu einem Tagungsband |
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Veröffentlichungsform: | Verlagsliteratur |
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Sprache: | Englisch |
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Titel des übergeordneten Werkes (Englisch): | 26th European photovoltaic solar energy conference and exhibition (Proceedings) |
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Jahr der Erstveröffentlichung: | 2011 |
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Erste Seite: | 1220 |
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Letzte Seite: | 1223 |
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Freie Schlagwörter: | Doping; Laser processing; Multicrystalline silicon; Selective emitter |
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Veranstaltung: | 26th European photovoltaic solar energy conference and exhibition |
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Veranstaltungsort: | Hamburg, Germany |
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Beginndatum der Veranstaltung: | 05.09.2011 |
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Enddatum der Veranstaltung: | 08.09.2011 |
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DOI: | 10.4229/26thEUPVSEC2011-2BV.1.2 |
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ISBN: | 3-936338-27-2 |
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Verfügbarkeit des Dokuments: | Datei im Netzwerk der BAM verfügbar ("Closed Access") |
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Datum der Freischaltung: | 19.02.2016 |
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Referierte Publikation: | Nein |
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