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Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon
- Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensiveSuperficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn.…
Autor*innen: | Camilo Florian, Daniel Fischer, K. Freiberg, M. Duwe, Mario Sahre, S. Schneider, Andreas HertwigORCiD, Jörg KrügerORCiD, M. Rettenmayr, Uwe Beck, A. Undisz, Jörn BonseORCiD |
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Dokumenttyp: | Zeitschriftenartikel |
Veröffentlichungsform: | Verlagsliteratur |
Sprache: | Englisch |
Titel des übergeordneten Werkes (Englisch): | Materials |
Jahr der Erstveröffentlichung: | 2021 |
Organisationseinheit der BAM: | 6 Materialchemie |
6 Materialchemie / 6.2 Material- und Oberflächentechnologien | |
6 Materialchemie / 6.7 Materialsynthese und Design | |
Veröffentlichende Institution: | Bundesanstalt für Materialforschung und -prüfung (BAM) |
Verlag: | MDPI AG |
Verlagsort: | Basel, Switzerland |
Jahrgang/Band: | 14 |
Ausgabe/Heft: | 7 |
Erste Seite: | 1651-1 |
Letzte Seite: | 1651-21 |
DDC-Klassifikation: | Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten |
Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Angewandte Physik | |
Freie Schlagwörter: | Amorphization; Crystallization; Femtosecond laser; Silicon; Spectroscopic imaging ellipsometry |
Themenfelder/Aktivitätsfelder der BAM: | Energie |
Material | |
Material / Materialdesign | |
DOI: | 10.3390/ma14071651 |
URN: | urn:nbn:de:kobv:b43-523687 |
URL: | https://www.mdpi.com/1996-1944/14/7/1651 |
ISSN: | 1996-1944 |
Verfügbarkeit des Dokuments: | Datei für die Öffentlichkeit verfügbar ("Open Access") |
Lizenz (Deutsch): | Creative Commons - CC BY - Namensnennung 4.0 International |
Datum der Freischaltung: | 31.03.2021 |
Referierte Publikation: | Ja |
Datum der Eintragung als referierte Publikation: | 12.04.2021 |
Schriftenreihen ohne Nummerierung: | Wissenschaftliche Artikel der BAM |