TY - CONF A1 - Schmidt, Sebastian Hanns-Otto T1 - Wide-spectrum dielectric functions of ALD deposited oxides relevant for photovoltaics N2 - Silicon surface passivation with atomic layer deposited (ALD) thin films has gained more and more interest in the PV community in recent years. With ALD good film quality, accurate thickness control and conformity are reached. Furthermore, ALD is capable of coating difficult substrates such as nanostructured surfaces with the same accuracy as flat surfaces. A variety of materials such as Al2O3, TiO2 and HfO2 demonstrate good surface passivation quality both for front and rear surface of silicon solar cells. In addition of providing good surface passivation, thin films with high refractive index e.g. HfO2, TiO2 and AlN can act simultaneously as antireflection coatings when applied on the front surface of the device. Hence, ALD thin films can reduce both electrical and reflective losses in solar cells. Thorough investigation of the optical properties of these layers is crucial for several reasons related to their production and use. Optical measurements provide a fast, easy, non-destructive, and in situ capable approach to quality assurance for photovoltaic devices. As the function of the final device is optical, optimisation of the device performance relies strongly on the knowledge of the wide-range dielectric function of the thin layers. In this contribution, we determined the optical constants of ALD generated layers of AlN, Al2O3, TiO2, and HfO2 in a wide spectral range covering the near ultraviolet and the mid-infrared regions by means of spectroscopic ellipsometry. By combining data from a UV-Vis-NIR ellipsometer (Woollam M2000DI) and an FTIR ellipsometer (Sentech Sendira), we can determine the optical constants alongside with the layer thicknesses from one large set of spectroscopic measurements. We consider this a contribution to the metrological treatment of stratified and structured thin films in the optical range by polarisation-sensitive measurement methods. T2 - International conference on spectroscopic ellipsometry (ICSE 7) CY - Berlin, Germany DA - 06.06.2016 KW - ALD (atomic layer deposited) KW - Ellipsometry KW - Photovoltaic KW - Solar Cell KW - HfO2 KW - Aln KW - Al2O3 KW - TiO2 PY - 2016 AN - OPUS4-37222 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Kim, K. J. A1 - Yu, H. A1 - Lee, S. M. A1 - Kwon, J. H. A1 - Ruh, H. A1 - Radnik, Jörg A1 - Archanjo, B. S. A1 - Annese, E. A1 - Damasceno, J. C. A1 - Achete, C. A. A1 - Yao, Y. A1 - Ren, L. A1 - Gao, H. A1 - Windover, D. A1 - Matsuzaki, H. A1 - Azuma, Y. A1 - Zhang, L. A1 - Fujimoto, T. A1 - Jordaan, W. A. A1 - Reed, B. A1 - Shard, A. G. A1 - Cibik, L. A1 - Gollwitzer, C. A1 - Krumrey, M. T1 - Final report of CCQM-K157 for the measurement of the amount of substance of HfO2 expressed as the thickness of nm films N2 - The key comparison CCQM-K157 for the thickness measurement of HfO2 films was performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of CCQM-K157 is to establish the measurement traceability and to ensure the equivalency in the measurement capability of national metrology institutes for the thickness measurement of HfO2 films. In this key comparison, the thicknesses of six HfO2 films with the nominal thickness range from 0.7 nm to 6 nm were compared by x-ray photoelectron spectroscopy (XPS), x-ray reflectometry (XRR), transmission electron microscopy (TEM), spectroscopic ellipsometry (SE) and medium energy ion scattering spectrometry (MEIS). To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database https://www.bipm.org/kcdb/. The final report has been peer-reviewed and approved for publication by the CCQM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA). KW - CCQM KW - Thin Films KW - HfO2 KW - thickness KW - XPS PY - 2023 DO - https://doi.org/10.1088/0026-1394/60/1A/08010 VL - 60 SP - 08010 PB - IOP AN - OPUS4-63049 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -