TY - JOUR A1 - Florian, Camilo A1 - Fischer, Daniel A1 - Freiberg, K. A1 - Duwe, M. A1 - Sahre, Mario A1 - Schneider, S. A1 - Hertwig, Andreas A1 - Krüger, Jörg A1 - Rettenmayr, M. A1 - Beck, Uwe A1 - Undisz, A. A1 - Bonse, Jörn T1 - Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon N2 - Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn. KW - Femtosecond laser KW - Silicon KW - Amorphization KW - Crystallization KW - Spectroscopic imaging ellipsometry PY - 2021 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-523687 UR - https://www.mdpi.com/1996-1944/14/7/1651 DO - https://doi.org/10.3390/ma14071651 SN - 1996-1944 VL - 14 IS - 7 SP - 1651-1 EP - 1651-21 PB - MDPI AG CY - Basel, Switzerland AN - OPUS4-52368 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Florian, Camilo T1 - Silicon surface amorphization and re-crystallization via single femtosecond laser pulses N2 - Silicon is the material responsible for most of the technological developments during the past century, making it one of the most studied materials along different disciplines. However, there are still unturned stones regarding its superficial re-solidification after femtosecond laser-induced local melting. In this presentation, we report irradiation experiments with single femtosecond pulses (790 nm, 30 fs) with a spatially Gaussian distribution on two different types of silicon with orientations <111> and <100>. The surface modifications were studied in detail via different techniques, including optical microscopy, atomic force microscopy, spectroscopic imaging ellipsometry, energy dispersive X-ray spectroscopy and high-resolution transmission electron microscopy. We quantitatively estimate the resulting radial amorphous layer depth profiles with maximum thicknesses around some tenths of nanometers for fluences in between the melting and ablation thresholds. In particular, spectroscopic imaging ellipsometry (SIE) allowed fast data acquisition using multiple wavelengths to provide experimental measurements for calculating the nanometric radial amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. SIE proved to be capable of detecting and measuring nanometric structural and chemical modifications (oxidation) on the studied laser spots. The accuracy of the SIE-based calculations is verified experimentally by characterizing an in-depth material lamella via high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). For completeness, we present a mathematical modelling for the melt layer thickness considering different optical absorption processes including one photon absorption, two photon absorption and free-carrier absorption, highlighting the relevance of the latter one in the femtosecond laser-induced melting of silicon. T2 - 28th International Conference on Advanced Laser Technologies (ALT'21) CY - Online meeting DA - 06.09.2021 KW - Silicon KW - Femtosecond laser KW - Phase transitions KW - Spectroscopic imaging ellipsometry KW - Transmission electron microscopy PY - 2021 AN - OPUS4-53235 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Acosta-Zepeda, C. A1 - Saavedra, S. A1 - Bonse, Jörn A1 - Haro-Poniatowski, E. T1 - Modelling of single UV nanosecond pulsed laser surface modifications of silicon N2 - Irradiation with a single spatially Gaussian-shaped nanosecond laser pulse in the melting regime can result in a characteristic annular change in the surface morphology of crystalline silicon. This has been verified experimentally in a variety of situations, where dimple-shaped surface topographies are produced. In a recent work we have investigated the induced changes in the surface topography upon exposure to wavelengths in the visible and near infrared spectral region. Irradiation in the UV requires a more detailed analysis due to the enhanced absorption of the material. In the present analysis, we determine under which conditions our previous model can be used and the corresponding results are presented. KW - Laser KW - Silicon KW - Surface modification PY - 2020 DO - https://doi.org/10.1088/1555-6611/ab9b2c SN - 1555-6611 SN - 1054-660X VL - 30 IS - 8 SP - 086003-1 EP - 086003-4 PB - IOP Publishing / Astro Ltd CY - Bristol, United Kingdom AN - OPUS4-51022 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hülagü, Deniz A1 - Hirahara, Kenta A1 - Fischer, Daniel A1 - Florian, Camilo A1 - Schusterbauer, Robert A1 - Ermilova, Elena A1 - Krüger, Jörg A1 - Unterreiner, Andreas-Neil A1 - Bonse, Jörn A1 - Hertwig, Andreas T1 - Using imaging ellipsometry to understand femtosecond laser materials processing of group IV materials N2 - Laser materials processing is an important tool for creating and shaping new materials. Laser machining, especially with ultrashort pulses offers the modification of surfaces, thin coatings, and bulk materials with an unprecedented precision and control. The most desired feature of pulsed laser processing in the femtosecond range is that the heat-affected zone in the irradiated material will be extremely small. To better understand the mechanisms involved during laser irradiation, it is important to analyse the outcome of light-matter interaction with spectroscopic methods. Ellipsometry, especially spectroscopic imaging ellipsometry (SIE), has become an important tool for this in recent times, as it gives access to local layer thicknesses, materials dielectric functions, and features like changes in surface roughness. This work includes an overview over our recent studies examining near-infrared fs-laser surface processing of different group IV materials. The superficial phase change of silicon from crystalline to amorphous has been investigated in the past as the result of laser processing strongly depends on the crystal orientation. Moreover, SIE is capable of determining the properties of buried a-Si interfaces with micrometer lateral and sub-nanoneter vertical precision. Additionally, the growth of native and laser-induced oxides can be revealed. T2 - ICSE10 - 10th International Conference on Spectroscopic Ellipsometry CY - Boulder, CO, USA DA - 08.06.2025 KW - Laser surface ablation KW - Amorphous Carbon KW - Silicon KW - Correlative Imaging Ellipsometry PY - 2025 AN - OPUS4-63633 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -