TY - CONF A1 - Ermilova, Elena A1 - Hertwig, Andreas A1 - Weise, Matthias A1 - Grundmann, Jana A1 - Bodermann, Bernd A1 - Klapetek, Petr A1 - Hoffmann, Johannes A1 - de Preville, Sophie T1 - Imaging spectroscopic ellipsometry for investigation of energy materials and materials for nano-electronics N2 - Ellipsometry is a very powerful tool used for accurate material investigation in a wide wavelength range. It is a non-destructive and fast method. Imaging ellipsometry as a combination of optical microscopy and ellipsometry enables spatially resolved measurements when determining the layer thickness and dielectric properties of thin layers. It is known for its high polarisation sensitivity and high contrast for the surface structures. In this contribution we show the application of the imaging ellipsometry for detection of defects in energy materials and quality validation of possible reference materials for nano-electronics. Defects in wide bandgap semiconductors, in homoepitaxial SiC and heteroepitaxial GaN layers on transparent SiC substrates, can be successfully detected and classified by means of imaging ellipsometry. Correlation of imaging ellipsometry results with results from complementary techniques such as white light interference microscopy as well as atomic force microscopy contribute to understanding of surface topography and defect formation mechanisms. We discuss the potential of different methods for analysing ellipsometric map data for monitoring the defect densities. Electric properties of materials at the nanoscale can be investigated by means of scanning probe microscopy methods such as scanning microwave microscopy and conductive atomic force microscopy. However, development of new robust and easy-to-use calibration methods and calibration standards is essential to increase the traceability of these methods and allow their broad application in industry. We show how imaging spectroscopic ellipsometry can be used for development and monitoring of processing quality of patterned reference samples based on indium tin oxide (ITO) layer with different thickness and conductivity. T2 - 12th Workshop on Spectroscopic Ellipsometry (WSE) CY - Prague, Czech Republic DA - 18.09.2023 KW - Ellipsometry KW - Thin Films KW - Transparent Conductive Oxides KW - Energy materials KW - White light interference microscopy KW - Nanoelectronics KW - Wide-bandgap semiconductors PY - 2023 AN - OPUS4-59340 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Sözen, H.I. A1 - Ener, S. A1 - Maccari, F. A1 - Fayyazi, B. A1 - Gutfleisch, O. A1 - Neugebauer, J. A1 - Hickel, Tilmann T1 - Combined ab initio and experimental screening of phase stabilities in the Ce-Fe-Ti-X system (X = 3d and 4d metals) N2 - One of the main challenges for the synthesis and application of the promising hard-magnetic compound CeFe11Ti is the formation of Laves phases that are detrimental for their thermodynamic stability and magnetic properties. In this paper, we present an ab initio based approach to modify the stability of these phases in the Ce-Fe-Ti system by additions of 3d and 4d elements. We combine highly accurate free-energy calculations with an efficient screening technique to determine the critical annealing temperature for the formation of Ce(Fe,X)11Ti. The central findings are the dominant role of the formation enthalpy at T = 0 K on chemical trends and the major relevance of partial chemical decompositions. Based on these insights, promising transition metals to promote the stability of the hard-magnetic phase, such as Zn and Tc, were predicted. The comparison with suction casting and reactive crucible melting experiments for Ce-Fe-Ti-X (X = Cu, Ga, Co, and Cr) highlights the relevance of additional phases and quaternary elements. KW - Density functional theory KW - Phase stability KW - Energy materials PY - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-568850 SN - 2475-9953 VL - 7 SP - 1 EP - 15 AN - OPUS4-56885 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -