TY - JOUR A1 - Hönig, Gerald A1 - Westerkamp, S. A1 - Hoffmann, A. A1 - Callsen, G. T1 - Shielding electrostatic fields in polar semiconductor nanostructures JF - Physical Review Applied N2 - Polar semiconductor materials enable a variety of classic and quantum-light sources, which are optimized continuously. However, one key problem—the inherent electric crystal polarization of such materials—remains unsolved and deteriorates the radiative exciton decay rate. We suggest a sequence of reverse interfaces to compensate these polarization effects, while the polar, natural crystal growth direction is maintained. Former research approaches, like growth on less-polar crystal planes or even the stabilization of unnatural phases, never reached industrial maturity. In contrast, our concept provides a way for the development of ultrafast devices based on established growth processes for polar materials, while the electric potential landscape becomes adjustable. KW - Piezopolarisation KW - Spontane Polarisation KW - Halbleiterphysik KW - Nanophysik KW - Optoelektronik PY - 2017 DO - https://doi.org/10.1103/PhysRevApplied.7.024004 SN - 2331-7019 VL - 7 IS - 2 SP - 024004-1 EP - 024004-12 PB - American Physical Society CY - College Park, MD 20740-3844 AN - OPUS4-39125 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schlichting, S. A1 - Hönig, Gerald M. O. A1 - Wagner, M. R. A1 - Müßener, J. A1 - Hille, P. A1 - Teubert, J. A1 - Schörmann, J. A1 - Eickhoff, M. A1 - Hoffmann, A. A1 - Callsen, G. T1 - Tuning of the quantum-confined Stark effect in wurtzite [0001] nanostructures by the internal-field-guarded-active-region design N2 - In this work we eliminate the QCSE without having any special requirements on the growth procedure or the material. Hönig et al. developed the Internal-Field-Guarded-Active-Region Design (IFGARD), which we experimentally investigate in this work based on GaN/AlN nanodiscs (NDs). T2 - Compound Semiconductor Week 2017 CY - Berlin, Germany DA - 14.05.2017 KW - Halbleiterphysik KW - Nanophysik KW - Optoelektronik KW - Piezopolarisation KW - Spontane Polarisation PY - 2017 AN - OPUS4-40174 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -