TY - JOUR A1 - Katsikini, M. A1 - Filintoglou, K. A1 - Pinakidou, F. A1 - Pilatsikas, N. A1 - Arvanitidis, J. A1 - Christofilos, D. A1 - Paloura, E.C. A1 - Ves, S. A1 - Reinholz, Uwe A1 - Papadomanolaki, E. A1 - Lliopoulos, E. T1 - Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN N2 - In-K-edge x-ray absorption fine structure (EXAFS), x-ray photoelectron, and Raman spectroscopy results are combined for a comprehensive study of InxGa1−xN layers with energy gaps extending over nearly the whole visible spectrum. The In–N and In–(In,Ga) distances determind by EXAFS are used for the derivation of the In–N bond ionicity as well as for the phonon frequency dependence of the LO and B21 modes, assessed by Raman, and the N 1s, In 3d5/2, Ga 3s, and Ga 2p1/2 electron binding energies on those distances. Phonon confinement due to perturbation of the periodic potential caused by the alloying is also quantified. KW - Band gap KW - Phonons KW - Epitaxy KW - Electronic structure KW - X-ray photoelectron KW - Nitrides PY - 2021 U6 - https://doi.org/10.1063/5.0069359 VL - 130 IS - 20 SP - 205706 - 1 EP - 205706 - 9 PB - AIP Publishing AN - OPUS4-53956 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -