TY - CONF A1 - Bonse, Jörn T1 - Single Femtosecond Laser Pulse induced Amorphization, Re-crystallization and Native Oxide Removal at Silicon Wafer Surfaces N2 - Single femtosecond laser pulse induced amorphization, re-crystallization and native oxide layer removal at silicon wafer surfaces of different crystal orientation is studied via spectroscopic imaging ellipsometry, atomic force microscopy, and high-resolution transmission electron microscopy. T2 - 2023 Conference on Lasers and Electro-Optics/Europe – European Quantum Electronics Conferences CY - Munich, Germany DA - 26.06.2023 KW - Femtosecond laser KW - Laser-induced amorphization KW - Spectroscopic imaging ellipsometry KW - Transmission electron microscopy KW - Native oxide layer PY - 2023 AN - OPUS4-57829 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Florian, Camilo T1 - Optical thickness-profiling for fs-laserinduced superficial amorphization and oxide removal on silicon N2 - Amorphization and re-crystallization of polished silicon wafers cut in <111> and <100> orientation were studied after irradiation by single Ti:sapphire femtosecond laser pulses (790 nm, 30 fs) using optical imaging, topographic characterization, and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) enabled fast data acquisition at multiple wavelengths and provided experimental data for calculating the amorphous layer thickness profiles with lateral resolution in the micrometer and vertical resolution in the nanometer range based on a thin-film layer model including the topmost native oxide. For a radially Gaussian shaped laser beam and at moderate peak laser fluences above the melting but below the ablation threshold, laterally parabolic amorphous layer profiles with maximum thicknesses of some tens of nanometers were quantitatively derived. Moreover, the threshold fluence of the native oxide removal was quantified. At laser peak fluences closely below the ablation threshold of silicon, SIE is capable to reveal even the laser-induced removal and formation of the native oxide covering the Si wafers under ambient air conditions. The accuracy of these all-optical, non-destructive SIE-based layer thickness assessments is verified experimentally through high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the oxide removal and superficial re-solidification of silicon after local melting by femtosecond laser pulses can be drawn. T2 - E-MRS Spring Meeting 2025 CY - Strasbourg, France DA - 26.05.2025 KW - Femtosecond laser KW - Laser-induced amorphization KW - Native oxide layer KW - Spectroscopic imaging ellipsometry KW - Transmission electron microscopy PY - 2025 AN - OPUS4-63275 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -