TY - JOUR A1 - Schäfer, N. A1 - Chahine, G. A. A1 - Wilkinson, A. J. A1 - Schmid, Thomas A1 - Rissom, T. A1 - Schülli, T. U. A1 - Abou-Ras, D. T1 - Microstrain distributions in polycrystalline thin films measured by X-ray microdiffraction JF - Journal of Applied Crystallography N2 - Microstrain distributions were acquired in functional thin films by high-resolution X-ray microdiffraction measurements, using polycrystalline CuInSe2 thin films as a model system. This technique not only provides spatial resolutions at the submicrometre scale but also allows for analysis of thin films buried within a complete solar-cell stack. The microstrain values within individual CuInSe2 grains were determined to be of the order of 10^-4. These values confirmed corresponding microstrain distribution maps obtained on the same CuInSe2 layer by electron backscatter diffraction and Raman microspectroscopy. KW - Microstrain distribution KW - X-ray microdiffraction KW - Polycrystalline thin films KW - Raman microscopy PY - 2016 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-366592 DO - https://doi.org/10.1107/S1600576716003204 SN - 1600-5767 VL - 49 SP - 632 EP - 635 AN - OPUS4-36659 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Schäfer, N. A1 - Wilkinson, A. J. A1 - Schmid, Thomas A1 - Winkelmann, Aimo A1 - Chahine, G. A. A1 - Schülli, T. U. A1 - Rissom, T. A1 - Marquardt, J. A1 - Schorr, S. A1 - Abou-Ras, D. T1 - Microstrain distribution mapping on CuInSe2 thin films by means of electron backscatter diffraction, X-ray diffraction, and Raman microspectroscopy JF - Ultramicroscopy N2 - The investigation of the microstructure in functional, polycrystalline thin films is an important contribution to the enhanced understanding of structure–property relationships in corresponding devices. Linear and planar defects within individual grains may affect substantially the performance of the device. These defects are closely related to strain distributions. The present work compares electron and X-ray diffraction as well as Raman microspectroscopy, which provide access to microstrain distributions within individual grains. CuInSe₂ thin films or solar cells are used as a modelsystem. High-resolution electron backscatter diffraction and X-ray microdiffraction as well as Ramanmicrospectroscopy were applied for this comparison. Consistently, microstrain values were determined of the order of 10⁻⁴ by these three techniques. However,only electron backscatter diffraction, X-ray microdiffraction exhibit sensitivities appropriate for mapping local strain changes at the submicrometer level within individual grains in polycrystalline materials. KW - Microstrain KW - Thin film KW - X-ray microdiffraction KW - EBSD KW - Raman microspectroscopy PY - 2016 DO - https://doi.org/10.1016/j.ultramic.2016.07.001 SN - 0304-3991 SN - 1879-2723 VL - 169 SP - 89 EP - 97 PB - Elsevier B.V. AN - OPUS4-37453 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Naresh-Kumar, G. A1 - Vilalta-Clemente, A. A1 - Jussila, H. A1 - Winkelmann, Aimo A1 - Nolze, Gert A1 - Vespucci, S. A1 - Nagarajan, S. A1 - Wilkinson, A. J. A1 - Trager-Cowan, C. T1 - Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction JF - Scientific Reports N2 - Advanced structural characterisation techniques which are rapid to use, non-destructive and structurally definitive on the nanoscale are in demand, especially for a detailed understanding of extended-defects and their influence on the properties of materials. We have applied the electron backscatter diffraction (EBSD) technique in a scanning electron microscope to non-destructively characterise and quantify antiphase domains (APDs) in GaP thin films grown on different (001)Si substrates with different offcuts. We were able to image and quantify APDs by relating the asymmetrical intensity distributions observed in the EBSD patterns acquired experimentally and comparing the same with the dynamical electron diffraction simulations. Additionally mean angular error maps were also plotted using automated cross-correlation based approaches to image APDs. Samples grown on substrates with a 4° offcut from the [110] do not show any APDs, whereas samples grown on the exactly oriented substrates contain APDs. The procedures described in our work can be adopted for characterising a wide range of other material systems possessing non-centrosymmetric point groups. KW - Polarity KW - Semiconductor KW - Antiphase boundary PY - 2017 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-420167 SN - 2045-2322 VL - 7 SP - Article 10916, 1 EP - 10 AN - OPUS4-42016 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Winkelmann, Aimo A1 - Nolze, Gert A1 - Vespucci, S. A1 - Gunsekar, N.-K. A1 - Trager-Cowan, C. A1 - Vilalta-Clemente, A. A1 - Wilkinson, A. J. A1 - Voss, M. T1 - Diffraction effects and inelastic electron transport in angle-resolved microscopic imaging applications JF - Journal of Microscopy N2 - We analyse the signal formation process for scanning electron microscopic imaging applications on crystalline specimens. In accordance with previous investigations, we find nontrivial effects of incident beam diffraction on the backscattered electron distribution in energy and momentum. Specifically, incident beam diffraction causes angular changes of the backscattered electron distribution which we identify as the dominant mechanism underlying pseudocolour orientation imaging using multiple, angle-resolving detectors. Consequently, diffraction effects of the incident beam and their impact on the subsequent coherent and incoherent electron transport need to be taken into account for an in-depth theoretical modelling of the energy- and momentum distribution of electrons backscattered from crystalline sample regions. Our findings have implications for the level of theoretical detail that can be necessary for the interpretation of complex imaging modalities such as electron channelling contrast imaging (ECCI) of defects in crystals. If the solid angle of detection is limited to specific regions of the backscattered electron momentum distribution, the image contrast that is observed in ECCI and similar applications can be strongly affected by incident beam diffraction and topographic effects from the sample surface. As an application, we demonstrate characteristic changes in the resulting images if different properties of the backscattered electron distribution are used for the analysis of a GaN thin film sample containing dislocations. KW - EBSD KW - Channeling-in KW - Background processing KW - Center of mass KW - Backscattered electrons PY - 2017 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-422063 DO - https://doi.org/10.1111/jmi.12571 SN - 0022-2720 VL - 267 IS - 3 SP - 330 EP - 346 PB - Wiley & Sons, Ltd. AN - OPUS4-42206 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -