TY - JOUR A1 - Winkelmann, Aimo A1 - Nolze, Gert A1 - Vespucci, S. A1 - Gunsekar, N.-K. A1 - Trager-Cowan, C. A1 - Vilalta-Clemente, A. A1 - Wilkinson, A. J. A1 - Voss, M. T1 - Diffraction effects and inelastic electron transport in angle-resolved microscopic imaging applications JF - Journal of Microscopy N2 - We analyse the signal formation process for scanning electron microscopic imaging applications on crystalline specimens. In accordance with previous investigations, we find nontrivial effects of incident beam diffraction on the backscattered electron distribution in energy and momentum. Specifically, incident beam diffraction causes angular changes of the backscattered electron distribution which we identify as the dominant mechanism underlying pseudocolour orientation imaging using multiple, angle-resolving detectors. Consequently, diffraction effects of the incident beam and their impact on the subsequent coherent and incoherent electron transport need to be taken into account for an in-depth theoretical modelling of the energy- and momentum distribution of electrons backscattered from crystalline sample regions. Our findings have implications for the level of theoretical detail that can be necessary for the interpretation of complex imaging modalities such as electron channelling contrast imaging (ECCI) of defects in crystals. If the solid angle of detection is limited to specific regions of the backscattered electron momentum distribution, the image contrast that is observed in ECCI and similar applications can be strongly affected by incident beam diffraction and topographic effects from the sample surface. As an application, we demonstrate characteristic changes in the resulting images if different properties of the backscattered electron distribution are used for the analysis of a GaN thin film sample containing dislocations. KW - EBSD KW - Channeling-in KW - Background processing KW - Center of mass KW - Backscattered electrons PY - 2017 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-422063 DO - https://doi.org/10.1111/jmi.12571 SN - 0022-2720 VL - 267 IS - 3 SP - 330 EP - 346 PB - Wiley & Sons, Ltd. AN - OPUS4-42206 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Winkelmann, Aimo A1 - Nolze, Gert A1 - Voss, M. A1 - Salvat-Pujol, F. A1 - Werner, W. S. M. T1 - Physics-based simulation models for EBSD: advances and challenges T2 - IOP Conf. Series: Materials Science and Engineering N2 - EBSD has evolved into an effective tool for microstructure investigations in the scanning electron microscope. The purpose of this contribution is to give an overview of various simulation approaches for EBSD Kikuchi patterns and to discuss some of the underlying physical mechanisms. T2 - EMAS 2015 - 14th European Workshop on MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS CY - Portoroz, Slovenia DA - 03.05.2015 KW - Electron backscatter diffraction KW - Simulation KW - Dynamical theory KW - Kinematic theory PY - 2016 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-377469 DO - https://doi.org/10.1088/1757-899X/109/1/012018 VL - 109 SP - 012018-1 EP - 012018-13 AN - OPUS4-37746 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -