TY - CONF A1 - Hahn, Marc Benjamin T1 - Ejemplos de simulaciónes de Montecarlo La desintegración radioactiva N2 - A walkthrough how to setup radioactive sources in monte-carlo particle scattering simulations and perform different types of scorings. N2 - En esta presentación desarrollaremos un ejemplo de aplicación para la dispersión de partículas utilizando el método de simulación de Monte- Carlo. Se discutirá el caso de las nanopartículas de oro radiactivo y los diferentes tipos del scoring. T2 - Seminar of the bioanalysis group CY - Universidad Nacional de Colombia, Medellin, Columbia DA - 27.02.2020 KW - MCS KW - Geant4-DNA KW - Geant4 KW - Radioactive nanoparticle KW - Radioactive decay KW - Particle scattering simulations KW - Particle scattering simulation KW - Topas KW - Monte-Carlo simulations KW - Desintegracion radioactiva KW - Método de Montecarlo KW - Geant4 KW - nanoparticula PY - 2020 AN - OPUS4-50472 LA - spa AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hahn, Marc Benjamin T1 - The change of DNA AND PROTEIN radiation damage upon hydration: In-situ observations by near-ambient-pressure XPS N2 - X-ray photoelectron-spectroscopy (XPS) allows simultaneous irradiation and damage monitoring. Although water radiolysis is essential for radiation damage, all previous XPS studies were performed in vacuum. Here we present near-ambient-pressure XPS experiments to directly measure DNA damage under water atmosphere. They permit in-situ monitoring of the effects of radicals on fully hydrated double-stranded DNA. Our results allow us to distinguish direct damage, by photons and secondary low-energy electrons (LEE), from damage by hydroxyl radicals or hydration induced modifications of damage pathways. The exposure of dry DNA to x-rays leads to strand-breaks at the sugar-phosphate backbone, while deoxyribose and nucleobases are less affected. In contrast, a strong increase of DNA damage is observed in water, where OH-radicals are produced. In consequence, base damage and base release become predominant, even though the number of strand-breaks increases further. T2 - Dyson Conference 2023 CY - Prague, Czech Republic DA - 24.04.2023 KW - Base damage KW - Base loss KW - Cancer treatment KW - DNA KW - DNA radiation damage KW - Direct damage KW - Dissociative electron attachment (DEA) KW - Dissociative electron transfer (DET) KW - Dosimetry KW - Double-strand break (DSB) KW - ESCA KW - Energy deposit KW - Geant4 KW - Geant4-DNA KW - Hydrated DNA KW - Hydrated electron KW - Hydration shell KW - Hydroxyl radical KW - Indirect damage KW - Ionization KW - Ionisation KW - LEE KW - Low energy electrons KW - MCS KW - Microdosimetry KW - NAP-XPS KW - Near ambient pressure xray photo electron spectroscopy KW - Net-ionization reaction KW - OH radical KW - PES KW - Particle scattering KW - Prehydrated electron KW - Presolvated electron KW - Quasi-direct damage KW - ROS KW - Radiation damage KW - Radiation therapy KW - Radical KW - Radiolysis KW - Radiotherapy KW - Reactive oxygen species KW - Simulation KW - Single-strand break (SSB) KW - TOPAS KW - TOPAS-nbio KW - XPS KW - Xray KW - Xray photo electron spectrocopy KW - G5P KW - Protein KW - Single-stranded DNA-binding proteins PY - 2023 AN - OPUS4-57406 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hassenstein, Christian T1 - Robotergestützte Ultraschallprüfung von Objekten mit komplexen Geometrien N2 - Durch den Einsatz moderner digitaler Design- und Fertigungsmethoden wachsen einerseits die Komplexität von Bauteilen, andererseits der Bedarf an Informationen über deren Qualität und Zustand. Damit steigen auch die Anforderungen an die zerstörungsfreie Prüfung, die im Zuge von ZfP 4.0 automatisierte und flexible, innovative Prüfmethoden erfordert. Das gilt insbesondere für Objekte, deren Oberflächengeometrien über plane Flächen und eindimensionale Krümmungen hinausgehen. Um zu zeigen, wie eine Ultraschallprüfung von Objekten mit komplexer Oberflächengeometrie realisiert werden kann, wurde an der BAM eine roboterbasierte Demonstratoranlage entwickelt. Dabei führt ein Roboterarm einen Array-Prüfkopf in Tauchtechnik senkrecht über die Prüffläche. Die dafür erforderliche Prüfbahn kann entweder anhand der CAD-Geometrie oder mithilfe einer Punktewolke der Prüffläche, die vorab mit einem am Roboter angebrachten Laser-Profilometer erfasst wird, ermittelt werden. Zur Erhöhung der Genauigkeit werden der Lasersensor und der Ultraschallprüfkopf automatisiert mit dafür entwickelten Routinen am Roboter eingemessen. Durch bildgebende Verfahren und eine automatische Auswertung der Bilder kann die in Tauchtechnik auftretende Brechung des Schallbündels an der Prüfteiloberfläche berücksichtigt werden, was die ortsrichtige Rekonstruktion von Anzeigen aus dem Prüfteilinneren bzw. der Rückwand ermöglicht. Durch Rückführung der Anzeigen in ein gemeinsames Koordinatensystem entsteht eine 3D-Rekonstruktion des Prüfteils. Der vorliegende Beitrag stellt die Demonstratoranlage und die angewendeten Methoden im Detail vor und nennt Anwendungsbeispiele. T2 - DGZfP Jahrestagung 2025 CY - Berlin, Germany DA - 26.05.2025 KW - Ultraschall KW - Robotik KW - Turbinenschaufel KW - Wanddicke KW - Defekterkennung PY - 2025 AN - OPUS4-63417 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Heilmann, Maria A1 - Hodoroaba, Vasile-Dan T1 - Project 16 Measurement of (relative) number concentration of bimodal silica nanoparticles including deposition from liquid suspension N2 - The progress of the VAMAS Project 16 "Measurement of (relative) number concentration of bimodal silica nanoparticles including deposition from liquid suspension" in TWA 34 Nanoparticle Populations is presented. Follwowing points are discusssed: - Validate the performance of imaging methods to measure the relative number concentration • electron microscopy (SEM, TEM) and atomic force microscopy (AFM) • two modes of bimodal (30 and 60 nm) silica nanoparticles - Validate the performance of small angle X-ray scattering (SAXS) for the traceable measurement of the number concentration of the two modes. T2 - VAMAS Regional Workshop 2023 - What can pre-normative research do for industry? CY - Online meeting DA - 24.01.2023 KW - Nanoparticles KW - VAMAS KW - Inter-laboratory comparison KW - SiO2 KW - Electron microscopy KW - AFM PY - 2023 UR - https://www.bam.de/Content/EN/Events/2023/2023-01-24-vamas-regional-workshop.html AN - OPUS4-57221 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Heilmann, Maria A1 - Hodoroaba, Vasile-Dan T1 - Project 15 Measurement of particle size and shape distribution of bipyramidal titania including deposition from liquid suspension N2 - The progress in the VAMAS Project #15" Measurement of particle size and shape distribution of bipyramidal titania including deposition from liquid suspension" within TWA 34 Nanoparticle Populations is presented with highlight of the following points: - Determine and compare particle size and shape distribution by means of: • electron microscopy (SEM, TEM, STEM-in-SEM) • atomic force microscopy (AFM) • small angle X-ray scattering (SAXS) - Determine uncertainty induced by deposition protocol from liquid suspension with comparison to known values from a prior ILC with already deposited nanoparticles on TEM grids. - Provide comparative validation of protocols for the techniques other than TEM. T2 - VAMAS Regional Workshop 2023 CY - Online meeting DA - 24.01.2023 KW - Nanoparticles KW - VAMAS KW - Electron microscopy KW - AFM KW - SAXS KW - TiO2 PY - 2023 UR - https://www.bam.de/Content/EN/Events/2023/2023-01-24-vamas-regional-workshop.html AN - OPUS4-57220 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - ELENA: a European project for electrical nanoscale metrology in industry N2 - A competitive advantage in the semiconductors industry is gained through the exploitation of new materials and processes, translating into improved components’ performances. This requires a metrological infrastructure allowing reliable nanoscale characterisation of new materials and devices, particularly in terms of their electrical parameters and properties. Traceability and reliability of nanoscale measurements stand as a major challenge for electrical properties (i.e. resistance, impedance) using conductive atomic force microscopy (C-AFM) and scanning microwave microscopy (SMM) techniques. The non-destructive analysis nature of these two methods is of paramount importance for the characterization of devices and components. However, the state of the art still lacks established measurement protocols, easy to use reference standards, well-defined best practice guides and easy to use 3D models to assess environmental and external stimulation effects. Moreover, costly instrumentation, particularly for high-frequency measurements, still hinders efficient advancements in these directions. ELENA is a 3-years European project that aims at bringing solutions to the aforementioned difficulties. To achieve this goal, the project uses a combination of nanoscale electrodynamic scanning probe methods in combination with optical tools such as spectroscopic ellipsometry on several lateral length scales to determine the electrical properties of layers and small structures. T2 - ICSE-9: The 9th International Conference on Spectroscopic Ellipsometry CY - Beijing, China DA - 2022-05-21 KW - Imaging Ellipsometry KW - Electrical thin layers KW - Scanning Probe methods KW - Hybrid metrology PY - 2022 AN - OPUS4-55464 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - New analytic ways to characterise mesoporous thin layers used in electrocatalytic water splitting N2 - Mesoporous materials are needed in many applications where a high specific surface area and adsorptive behaviour is needed. Important examples are separation techniques and barrier layers and catalysts. Electrochemical water splitting is the key technology for producing green hydrogen and there is no foreseeable alternative to this process for producing elementary hydrogen from green electrical power. Water electrolysis can be divided into the anodic Oxygen Evolution Reaction (OER) and the cathodic Hydrogen Evolution Reaction (HER). Both processes have to be heavily optimised to a large extent to avoid energy losses caused by overvoltage. The development of electrodes for these processes is especially difficult due to the many boundary conditions. Water splitting is a catalytic as well as electrochemical process. The contact area between the electrolyte and the electrode must be maximised maintaining the stability of the surface. Side reactions must be suppressed, and effective gas transport must be ensured. The whole process has to be tolerant with respect to temperature, harsh chemical conditions from the electrolyte as well as high current densities. We present a hybrid analytical method combining several analytical techniques for determining the properties of thin layers of mixed oxides of the general composition Ir:TiOx. These materials are promising candidates for electrocatalytical top coatings of OER electrodes. To lower the costs of the electrolysers, the main goal is to lower the Ir content retaining the system efficiency. The main properties which are hard to determine are the porous volume fraction and the Ir:Ti element ratio. By a combination of electron microscopy, spectroscopic operando ellipsometry, ellipsometric porosimetry, and other techniques, we can determine key features of mesoporous thin layer materials. We aim to develop operando capable techniques used in process monitoring as well as measurement techniques optimised for accuracy. By developing reference materials, we support long term uptake of our methodology. This work can directly be used for optimising electrocatalytic layers and is a good example for the power of hybrid metrology for improving materials design. T2 - International Conference on Resource Chemistry CY - Alzenau, Germany DA - 11.03.2024 KW - Ellipsometry KW - Electrocatalytic Water Splitting KW - Mesoporous Materials KW - Electron Probe Microanalysis KW - Hydrogen Generation PY - 2024 AN - OPUS4-59764 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a production measurement tool N2 - Spectroscopic Ellipsometry is an enormously versatile measurement tool for surfaces and thin layers. We discuss the use of ellipsometry in the context of quality control in production processes of eletrconic devices. T2 - Photonics Days Berlin Brandenburg CY - Berlin, Germany DA - 09.10.2023 KW - Ellipsometry KW - Quality control KW - Metrology PY - 2023 AN - OPUS4-59837 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a tool for electrical metrology - Referencing electrical properties of thin layers with TCO materials N2 - Ellipsometry is a highly valuable technology for bridging different measurement methods. As a fast, highly sensitive, and non-destructive optical technique with low environmental requirements, it is ideal for transporting measurement accuracy and for up-scaling measurements in the production environment. It can be used for highly precise determination of properties, material identity and correctness confirmation, as well as defect detection. Comparable, traceable, and accurate electrical measurements, especially at small scales are one of the biggest challenges in the development of the electrical and electronic devices of the future. In this project, we develop structured thin layer systems of the transparent conductive material indium tin oxide (ITO) to prove the concept of using these systems as standards for conductivity and permittivity. The layers are produced in a reactive magnetron sputtering process from raw ITO targets with additional oxidation achieved by oxygen injection. We present results of a study correlating the coating process conditions with the properties of the final layer material. We found that especially the temperature development during coating is of key importance and determines the layer properties to a large extent. We will discuss questions of homogeneity and reproducibility of the coating processes used. The finished layers undergo lithographic structuring and etching to produce patterns to serve as reference structures for scanning probe electrical measurements. TCOs have a large variety of applications. In this work we also study the usability of ITO for other purposes and investigate the stability of this material under application conditions. T2 - 12th Workshop Ellipsometry 2023 CY - Prague, Czech Republic DA - 18.09.2023 KW - Thin Films KW - Transparent Conductive Oxides KW - Ellipsometry KW - Electrical Properties KW - Nanoelectronics PY - 2023 AN - OPUS4-58410 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of spectroscopic imaging ellipsometry for quantification and characterisation of defects in thin films for power electronics N2 - Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. T2 - EMRS Spring Meeting 2024 - ALTECH 2024 CY - Strasbourg, France DA - 27.05.2024 KW - compound semiconductors KW - Ellipsometry KW - Layer Materials KW - Defect Analysis PY - 2024 AN - OPUS4-61005 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -