TY - JOUR A1 - Sachse, René A1 - Bernsmeier, D. A1 - Schmack, R. A1 - Häusler, I. A1 - Hertwig, Andreas A1 - Kraffert, K. A1 - Nissen, J. A1 - Kraehnert, R. T1 - Colloidal bimetallic platinum–ruthenium nanoparticles in ordered mesoporous carbon films as highly active electrocatalysts for the hydrogen evolution reaction N2 - Hydrogen features a very high specific energy density and is therefore a promising candidate for clean fuel from renewable resources. Water electrolysis can convert electrical energy into storable and transportable hydrogen gas. Under acidic conditions, platinum is the most active and stable monometallic catalyst for the hydrogen evolution reaction (HER). Yet, platinum is rare and needs to be used efficiently. Here, we report a synthesis concept for colloidal bimetallic platinum–ruthenium and rhodium–ruthenium nanoparticles (PtRuNP, RhRuNP) and their incorporation into ordered mesoporous carbon (OMC) films. The films exhibit high surface area, good electrical conductivity and well-dispersed nanoparticles inside the mesopores. The nanoparticles retain their size, crystallinity and composition during carbonization. In the hydrogen evolution reaction (HER), PtRuNP/OMC catalyst films show up to five times higher activity per Pt than Pt/C/Nafion® and PtRu/C/Nafion® reference catalysts. KW - Ordered mesoporous carbon KW - Bimetallic noble metal nanoparticles KW - Platinum-ruthenium colloid KW - Electrolysis KW - Hydrogen evolution reaction PY - 2020 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-506868 DO - https://doi.org/10.1039/C9CY02285F SN - 2044-4753 VL - 10 IS - 7 SP - 2057 EP - 2068 PB - Royal Society of Chemistry AN - OPUS4-50686 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Ermilova, Elena A1 - Hertwig, Andreas A1 - Döhring, Thorsten A1 - Stanik, Eva A1 - Cotroneo, Vincenzo A1 - Gibertini, Eugenio T1 - Ellipsometrical characterization of poly-dopamine layers considered for technical applications N2 - Although the organic molecule dopamine (3,4-dihydroxyphenethylamine) is commonly known as the “hormone of happiness”, thin films of poly-dopamine also have interesting technical properties. When produced by dip coating, the self-organizing layers grow in a reproducible thickness of single or multiple molecule monolayers of a few nanometer thickness only. In this work, we introduce a method of determining the layer thickness of poly-dopamine on mirrors for astronomical X-ray telescopes. This work is based on spectroscopic ellipsometry measurements and involves the development of an optical model for the poly-dopamine layers including the dielectric function. Thereby the complex refractive index of the produced layers was determined, covering the range from the ultraviolet to the near infrared spectral region. These measurement results and the corresponding technical challenges are presented in this contribution. Furthermore, an outlook to potential technical applications of this interesting material is given and poly-dopamine layers will make scientist and engineers hopefully happy as an innovative and fascinating technical solution for the future. T2 - SPIE PHOTONICS EUROPE CY - Strasbourg. France DA - 08.04.2024 KW - Polydopamine KW - Thin Solid Layers KW - X-ray optics KW - Spectroscopic Ellipsometry PY - 2024 SN - 978-1-5106-7344-1 DO - https://doi.org/10.1117/12.3015281 VL - 13013 SP - 1 EP - 8 PB - SPIE digital library AN - OPUS4-60954 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Omar, Hassan A1 - Hertwig, Andreas A1 - Szymoniak, Paulina A1 - Schönhals, Andreas T1 - Signature of the Adsorbed Layer on the glass transition of thin polymer Films: Broadband Dielectric spectroscopy and related techniques N2 - In well annealed thin polymer films with non-repulsive polymer/substrate interaction with a substrate an irreversibly adsorbed layer is expected to form. These adsorbed layers have shown a great potential for technological applications [1]. However, the growth kinetics and the molecular mobility of the adsorbed layer is still not fully understood. This concerns also the influence of the adsorbed layer on the thickness dependence of the glass transition temperature of thin films. This is partly due to the difficult accessibility of these layers in thin films. Here, the irreversibly adsorbed layers of semi-rigid mail chain polymers like polycarbonate or polysulfone are revealed by solvent-leaching experiments. First, the growth kinetics of these layers is investigated as a function of annealing time. The film thickness, topography and the quality of the adsorbed layer is controlled by Atomic Force Microscopy (AFM). Secondly, the molecular mobility of the adsorbed layer is investigated by Broadband Dielectric Spectroscopy (BDS). A developed nanostructured capacitor arrangement is employed to measure the layer with a free surface. In addition to the dielectric experiments, spectroscopic Ellipsometry measurements are carried out to estimate the glass transition of the thin films. The thickness dependence of the glass transition of the thin films is correlated with the adsorbed layer [2,3]. Acknowledgments D. Hülagü and G. Hidde thanked for the help with the ellipsometry measurements. T2 - 12. Conference on Broabband Dielectric Spectroscopy and its Application CY - Lisbon, Portugal DA - 01.09.2024 KW - Thin films PY - 2024 AN - OPUS4-60959 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Omar, Hassan A1 - Hiid, Gundula A1 - Szymoniak, Paulina A1 - Hertwig, Andreas A1 - Schönhals, Andreas T1 - Growth kinetics of the adsorbed layer of poly(bisphenol A carbonate) and its effect on the glass transition behavior in thin films N2 - The glass transition behavior of thin films of poly(bisphenol A carbonate) (PBAC) was studied employing ellipsometry. The glass transition temperature increases with the reduction of the film thickness. This result is attributed to the formation of an adsorbed layer with a reduced mobility compared to bulk PBAC. Therefore, for the first time, the growth kinetics of the adsorbed layer of PBAC was investigated, prepared by leaching samples from a 200 nm thin film which were annealed for several times at three different temperatures. The thickness of each prepared adsorbed layer was measured by multiple scans using atomic force microscopy (AFM). Additionally, an unannealed sample was measured. Comparison of the measurements of the unannealed and the annealed samples provides proof of a pre-growth regime for all annealing temperatures which was not observed for other polymers. For the lowest annealing temperature after the pre-growth stage only a growth regime with a linear time dependence is observed. For higher annealing temperatures the growth kinetics changes from a linear to a logarithmic growth regime at a critical time. At the longest annealing times the films showed signs of dewetting where segments of the adsorbed film were removed from the substrate (dewetting by desorption). The dependence of the surface roughness of the PBAC surface on annealing time also confirmed that the films annealed at highest temperatures for the longest times desorbed from the substrate. KW - Ultra thin polymer films PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-574531 DO - https://doi.org/10.1039/D3RA02020G SN - 2046-2069 VL - 13 IS - 21 SP - 14473 EP - 14483 PB - RSC Publishing CY - London AN - OPUS4-57453 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Mezera, Marek A1 - Alamri, S. A1 - Hendriks, W. A. P. M. A1 - Hertwig, Andreas A1 - Elert, Anna Maria A1 - Bonse, Jörn A1 - Kunze, T. A1 - Lasagni, A. F. A1 - Römer, G. R. B. E. T1 - Hierarchical micro-/nano-structures on polycarbonate via UV pulsed laser processing N2 - Hierarchical micro/-nanostructures were produced on polycarbonate polymer surfaces by employing a two-step UV-laser processing strategy based on the combination of Direct Laser Interference Patterning (DLIP) of gratings and pillars on the microscale (3 ns, 266 nm, 2 kHz) and subsequently superimposing Laser-induced Periodic Surface Structures (LIPSS; 7–10 ps, 350 nm, 100 kHz) which adds nanoscale surface features. Particular emphasis was laid on the influence of the direction of the laser beam polarization on the morphology of resulting hierarchical surfaces. Scanning electron and atomic force microscopy methods were used for the characterization of the hybrid surface structures. Finite-difference time-domain (FDTD) calculations of the laser intensity distribution on the DLIP structures allowed to address the specific polarization dependence of the LIPSS formation observed in the second processing step. Complementary chemical analyzes by micro-Raman spectroscopy and attenuated total reflection Fourier-transform infrared spectroscopy provided in-depth information on the chemical and structural material modifications and material degradation imposed by the laser processing. It was found that when the linear laser polarization was set perpendicular to the DLIP ridges, LIPSS could be formed on top of various DLIP structures. FDTD calculations showed enhanced optical intensity at the topographic maxima, which can explain the dependency of the morphology of LIPSS on the polarization with respect to the orientation of the DLIP structures. It was also found that the degradation of the polymer was enhanced for increasing accumulated fluence levels. KW - Direct laser interference patterning KW - Laser-induced periodic surface structures (LIPSS) KW - Polycarbonate KW - Hierarchical structures KW - Surface functionalization PY - 2020 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-509101 DO - https://doi.org/10.3390/nano10061184 SN - 2079-4991 VL - 10(6) IS - Special issue "Laser-generated periodic nanostructures" SP - 1184-1 EP - 1184-19 PB - MDPI CY - Basel AN - OPUS4-50910 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - ELENA: a European project for electrical nanoscale metrology in industry N2 - A competitive advantage in the semiconductors industry is gained through the exploitation of new materials and processes, translating into improved components’ performances. This requires a metrological infrastructure allowing reliable nanoscale characterisation of new materials and devices, particularly in terms of their electrical parameters and properties. Traceability and reliability of nanoscale measurements stand as a major challenge for electrical properties (i.e. resistance, impedance) using conductive atomic force microscopy (C-AFM) and scanning microwave microscopy (SMM) techniques. The non-destructive analysis nature of these two methods is of paramount importance for the characterization of devices and components. However, the state of the art still lacks established measurement protocols, easy to use reference standards, well-defined best practice guides and easy to use 3D models to assess environmental and external stimulation effects. Moreover, costly instrumentation, particularly for high-frequency measurements, still hinders efficient advancements in these directions. ELENA is a 3-years European project that aims at bringing solutions to the aforementioned difficulties. To achieve this goal, the project uses a combination of nanoscale electrodynamic scanning probe methods in combination with optical tools such as spectroscopic ellipsometry on several lateral length scales to determine the electrical properties of layers and small structures. T2 - ICSE-9: The 9th International Conference on Spectroscopic Ellipsometry CY - Beijing, China DA - 2022-05-21 KW - Imaging Ellipsometry KW - Electrical thin layers KW - Scanning Probe methods KW - Hybrid metrology PY - 2022 AN - OPUS4-55464 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - New analytic ways to characterise mesoporous thin layers used in electrocatalytic water splitting N2 - Mesoporous materials are needed in many applications where a high specific surface area and adsorptive behaviour is needed. Important examples are separation techniques and barrier layers and catalysts. Electrochemical water splitting is the key technology for producing green hydrogen and there is no foreseeable alternative to this process for producing elementary hydrogen from green electrical power. Water electrolysis can be divided into the anodic Oxygen Evolution Reaction (OER) and the cathodic Hydrogen Evolution Reaction (HER). Both processes have to be heavily optimised to a large extent to avoid energy losses caused by overvoltage. The development of electrodes for these processes is especially difficult due to the many boundary conditions. Water splitting is a catalytic as well as electrochemical process. The contact area between the electrolyte and the electrode must be maximised maintaining the stability of the surface. Side reactions must be suppressed, and effective gas transport must be ensured. The whole process has to be tolerant with respect to temperature, harsh chemical conditions from the electrolyte as well as high current densities. We present a hybrid analytical method combining several analytical techniques for determining the properties of thin layers of mixed oxides of the general composition Ir:TiOx. These materials are promising candidates for electrocatalytical top coatings of OER electrodes. To lower the costs of the electrolysers, the main goal is to lower the Ir content retaining the system efficiency. The main properties which are hard to determine are the porous volume fraction and the Ir:Ti element ratio. By a combination of electron microscopy, spectroscopic operando ellipsometry, ellipsometric porosimetry, and other techniques, we can determine key features of mesoporous thin layer materials. We aim to develop operando capable techniques used in process monitoring as well as measurement techniques optimised for accuracy. By developing reference materials, we support long term uptake of our methodology. This work can directly be used for optimising electrocatalytic layers and is a good example for the power of hybrid metrology for improving materials design. T2 - International Conference on Resource Chemistry CY - Alzenau, Germany DA - 11.03.2024 KW - Ellipsometry KW - Electrocatalytic Water Splitting KW - Mesoporous Materials KW - Electron Probe Microanalysis KW - Hydrogen Generation PY - 2024 AN - OPUS4-59764 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a production measurement tool N2 - Spectroscopic Ellipsometry is an enormously versatile measurement tool for surfaces and thin layers. We discuss the use of ellipsometry in the context of quality control in production processes of eletrconic devices. T2 - Photonics Days Berlin Brandenburg CY - Berlin, Germany DA - 09.10.2023 KW - Ellipsometry KW - Quality control KW - Metrology PY - 2023 AN - OPUS4-59837 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Ellipsometry as a tool for electrical metrology - Referencing electrical properties of thin layers with TCO materials N2 - Ellipsometry is a highly valuable technology for bridging different measurement methods. As a fast, highly sensitive, and non-destructive optical technique with low environmental requirements, it is ideal for transporting measurement accuracy and for up-scaling measurements in the production environment. It can be used for highly precise determination of properties, material identity and correctness confirmation, as well as defect detection. Comparable, traceable, and accurate electrical measurements, especially at small scales are one of the biggest challenges in the development of the electrical and electronic devices of the future. In this project, we develop structured thin layer systems of the transparent conductive material indium tin oxide (ITO) to prove the concept of using these systems as standards for conductivity and permittivity. The layers are produced in a reactive magnetron sputtering process from raw ITO targets with additional oxidation achieved by oxygen injection. We present results of a study correlating the coating process conditions with the properties of the final layer material. We found that especially the temperature development during coating is of key importance and determines the layer properties to a large extent. We will discuss questions of homogeneity and reproducibility of the coating processes used. The finished layers undergo lithographic structuring and etching to produce patterns to serve as reference structures for scanning probe electrical measurements. TCOs have a large variety of applications. In this work we also study the usability of ITO for other purposes and investigate the stability of this material under application conditions. T2 - 12th Workshop Ellipsometry 2023 CY - Prague, Czech Republic DA - 18.09.2023 KW - Thin Films KW - Transparent Conductive Oxides KW - Ellipsometry KW - Electrical Properties KW - Nanoelectronics PY - 2023 AN - OPUS4-58410 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of spectroscopic imaging ellipsometry for quantification and characterisation of defects in thin films for power electronics N2 - Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. T2 - EMRS Spring Meeting 2024 - ALTECH 2024 CY - Strasbourg, France DA - 27.05.2024 KW - compound semiconductors KW - Ellipsometry KW - Layer Materials KW - Defect Analysis PY - 2024 AN - OPUS4-61005 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Wolff, M. A1 - Wonneberger, R. A1 - Freiberg, K.E. A1 - Hertwig, Andreas A1 - Bonse, Jörn A1 - Giebeler, L. A1 - Koitzsch, A. A1 - Kunz, C. A1 - Weber, H. A1 - Hufenbach, J.K. A1 - Müller, F.A. A1 - Gräf, S. T1 - Formation of laser-induced periodic surface structures on Zr-based bulk metallic glasses with different chemical composition N2 - Bulk metallic glasses (BMG) are amorphous metal alloys known for their unique physical and mechanical properties. In the present study, the formation of femtosecond (fs) laser-induced periodic surface structures (LIPSS) on the Zr-based BMGs Zr46Cu46Al8, Zr61Cu25Al12Ti2, Zr52.5Cu17.9Al10Ni14.6Ti5 (Vit105) and Zr57Cu15.4Al10Ni12.6Nb5 (Vit106) was investigated as a function of their different chemical composition. For this purpose, LIPSS were generated on the sample surfaces in an air environment by fs-laser irradiation (λ = 1025 nm, τ = 300 fs, frep = 100 kHz). The surface topography was characterized by scanning electron microscopy and atomic force microscopy. Moreover, the impact of LIPSS formation on the structure and chemical surface composition was analyzed before and after fs-laser irradiation by X-ray diffraction and X-ray photoelectron spectroscopy as well as by transmission electron microscopy in combination with energy dispersive X-ray spectroscopy. Despite the different chemical composition of the investigated BMGs, the fs-laser irradiation resulted in almost similar properties of the generated LIPSS patterns. In the case of Zr61Cu25Al12Ti2, Vit105 and Vit106, the surface analysis revealed the preservation of the amorphous state of the materials during fs-laser irradiation. The study demonstrated the presence of a native oxide layer on all pristine BMGs. In addition, fs-laser irradiation results in the formation of laser-induced oxide layers of larger thickness consisting of an amorphous ZrAlCu-oxide. The precise laser-structuring of BMG surfaces on the nanoscale provides a versatile alternative to thermoplastic forming of BMG surfaces and is of particular interest for the engineering of functional material surfaces. KW - Bulk metallic glasses KW - Femtosecond laser KW - Laser-induced periodic surface structures (LIPSS) KW - Chemical analysis KW - Oxidation PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-581799 DO - https://doi.org/10.1016/j.surfin.2023.103305 SN - 2468-0230 VL - 42 SP - 1 EP - 11 PB - Elsevier B.V. AN - OPUS4-58179 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Minenkov, Alexey A1 - Hollweger, Sophia A1 - Duchoslav, Jiri A1 - Erdene-Ochir, Otgonbayar A1 - Weise, Matthias A1 - Ermilova, Elena A1 - Hertwig, Andreas A1 - Schiek, Manuela T1 - Monitoring the Electrochemical Failure of Indium Tin Oxide Electrodes via Operando Ellipsometry Complemented by Electron Microscopy and Spectroscopy N2 - Transparent conductive oxides such as indium tin oxide (ITO) are standards for thin film electrodes, providing a synergy of high optical transparency and electrical conductivity. In an electrolytic environment, the determination of an inert electrochemical potential window is crucial to maintain a stable material performance during device operation. We introduce operando ellipsometry, combining cyclic voltammetry (CV) with spectroscopic ellipsometry, as a versatile tool to monitor the evolution of both complete optical (i.e., complex refractive index) and electrical properties under wet electrochemical operational conditions. In particular, we trace the degradation of ITO electrodes caused by electrochemical reduction in a pH-neutral, water-based electrolyte environment during electrochemical cycling. With the onset of hydrogen evolution at negative bias voltages, indium and tin are irreversibly reduced to the metallic state, causing an advancing darkening, i.e., a gradual loss of transparency, with every CV cycle, while the conductivity is mostly conserved over multiple CV cycles. Post-operando analysis reveals the reductive (loss of oxygen) formation of metallic nanodroplets on the surface. The reductive disruption of the ITO electrode happens at the solid–liquid interface and proceeds gradually from the surface to the bottom of the layer, which is evidenced by cross-sectional transmission electron microscopy imaging and complemented by energy-dispersive X-ray spectroscopy mapping. As long as a continuous part of the ITO layer remains at the bottom, the conductivity is largely retained, allowing repeated CV cycling. We consider operando ellipsometry a sensitive and nondestructive tool to monitor early stage material and property changes, either by tracing failure points, controlling intentional processes, or for sensing purposes, making it suitable for various research fields involving solid–liquid interfaces and electrochemical activity. KW - General Materials Science PY - 2024 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-597625 DO - https://doi.org/10.1021/acsami.3c17923 SN - 1944-8252 VL - 16 IS - 7 SP - 9517 EP - 9531 PB - American Chemical Society (ACS) AN - OPUS4-59762 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas A1 - François, P. T1 - ELENA Project: Creating a simplified uncertainty calculation for industrial applications N2 - In this workpackage of the ELENA project, we develop a way to express the measurement uncertainty of nanoscale determination of electrical propserties. The method developed aims to be usable for industrial contexts and described in technical documents and standards drafts. Standards and reference samples are used to make traceable measurements available for the end user. T2 - Congrès International de Metrologie CY - Lyon, France DA - 06.03.2023 KW - Nanoscale measurements KW - Electrical properties KW - Optical measurements KW - Surfaces KW - Scanning probe measurements PY - 2023 AN - OPUS4-57155 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Grundmann, Jana A1 - Bodermann, Bernd A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas A1 - Klapetek, Petr A1 - Rafighdoost, Jila A1 - Pereira, Silvania F. T1 - Optical and tactile measurements on SiC sample defects N2 - Abstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations. KW - Compound semiconductors KW - Hybrid metrology KW - Material defects KW - Spectroscopic ellipsometry KW - Scanning probe microscopy KW - White-light interference microscopy PY - 2024 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-601220 DO - https://doi.org/10.5194/jsss-13-109-2024 SN - 2194-878X VL - 13 IS - 1 SP - 109 EP - 121 PB - Copernicus Publ. CY - Göttingen AN - OPUS4-60122 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Characterisation of thin layers of Polydopamine used as functional coatings in X-Ray optics N2 - Polydopamine (PDA) is a biological / biomimetic polymer which has spiked considerable interest in recent years. Its monomer is an important neurotransmitter and it is one of the strongest glues produced by biological organisms. Polydopamine is a candidate for several applications, mainly in the field of biology and medicine, but also - recently - for layer coatings with optical, electrical, and mechanical function. In this work, we investigate PDA layers intended as reflectivity enhancers for mirror surfaces in X-ray astronomical observatories. It has previously been shown, that such X-ray telescopes can be improved by a coating of PDA in the thickness range of several nm. Accurate thickness determination is required to monitor and optimise the coating process. We use spectroscopic ellipsometry to determine first the dielectric function of the polydopamine layers using model coatings of sufficient thickness. This data is then used to accurately determine the layer thickness of much thinner PDA layers. This study resulted in data on the thickness and dielectric function of PDA layers that could lead to a better understanding of the correlation of layer thickness and layer properties depending on the process parameters. T2 - Deutsche Physikalische Gesellschaft - Frühjahrstagung CY - Berlin, Germany DA - 17.03.2024 KW - Polydopamine KW - Thin Solid Layers KW - X-ray optics KW - Spectroscopic Ellipsometry PY - 2024 AN - OPUS4-60955 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Omar, Hassan A1 - Ahamadi, Shayan A1 - Hülagü, Deniz A1 - Hidde, Gundula A1 - Hertwig, Andreas A1 - Szymoniak, Paulina A1 - Schönhals, Andreas T1 - Investigations of the adsorbed layer of polysulfone: Influence of the thickness of the adsorbed layer on the glass transition of thin films N2 - This work studies the influence of the adsorbed layer on the glass transition of thin films of polysulfone. Therefore, the growth kinetics of the irreversibly adsorbed layer of polysulfone on silicon substrates was first investigated using the solvent leaching approach, and the thickness of the remaining layer was measured with atomic force microscopy. Annealing conditions before leaching were varied in temperature and time (0–336 h). The growth kinetics showed three distinct regions: a pre-growth step where it was assumed that phenyl rings align parallel to the substrate at the shortest annealing times, a linear growth region, and a crossover from linear to logarithmic growth observed at higher temperatures for the longest annealing times. No signs of desorption were observed, pointing to the formation of a strongly adsorbed layer. Second, the glass transition of thin polysulfone films was studied in dependence on the film thickness using spectroscopic ellipsometry. Three annealing conditions were compared: two with only a tightly bound layer formed in the linear growth regime and one with both tightly bound and loosely adsorbed layers formed in the logarithmic growth regime. The onset thickness and increase in the glass transition temperature increases with annealing time and temperature. These differences were attributed to the distinct conformations of the formed adsorbed layers. KW - Glass transition KW - Adsorbed Layer PY - 2024 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-607701 DO - https://doi.org/10.1063/5.0223415 SN - 0021-9606 VL - 161 IS - 5 SP - 1 EP - 12 PB - AIP Publishing AN - OPUS4-60770 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Hertwig, Andreas A1 - Ermilova, Elena T1 - Optical constants of a single AlN layer on Si N2 - Spectroscopic ellipsometry was used to determine the thickness and dielectric function of a Aluminium Nitride (AlN) layer on a Si wafer. The layer was determined to be 170 nm thick. The layer was provided by AIXTRON and manufactured by means of MOVPE. The data was created using a M2000DI spectroscopic ellipsometer from Woollam Co. Inc. Analysis was done using the CompleteEASE software. The model used is a multi-peak oscillator model for the AlN layer. The data resembles common database values for the material AlN. KW - Aluminium nitride KW - Thin solid layers KW - Spectroscopic ellipsometry KW - Compund semiconductors KW - MOVPE PY - 2024 UR - https://zenodo.org/records/12743500 DO - https://doi.org/10.5281/zenodo.12743499 PB - Zenodo CY - Geneva AN - OPUS4-60661 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Schmidt-Grund, R. A1 - Sturm, C. A1 - Hertwig, Andreas T1 - Ellipsometry and polarimetry - Classical measurement techniques with always new developments, concepts, and applications N2 - Ellipsometry is a matured experimental method, whose roots reach back into the early phase of modern optics itself. It is often attributed to be invented by Paul Drude in the last decade of the 19th century, but similar techniques had already been applied for years before Drude started his work. With this Special Issue about ellipsometry and related techniques, we hope to bring more attention to this method and advance and propagate it to be used by a broader community. We have collected a good mixture of articles: some texts are more in the line of users’ tutorial and best practice guides; others are intended to show recent developments of the method. With this collection, we also hope to show the generally rapidly expanding possibilities of ellipsometry and polarimetry to draw attention of new users and previously unrelated communities to this valuable tool. KW - Ellipsometry KW - Polarimetry KW - Surfaces KW - Thin films KW - Optical analysis PY - 2022 DO - https://doi.org/10.1515/aot-2022-0025 SN - 2192-8584 SN - 2192-8576 VL - 11 IS - 3-4 (Topical issue: Ellipsometry) SP - 57 EP - 58 PB - De Gruyter CY - Berlin AN - OPUS4-55467 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Determining Material Properties with Spectroscopic Ellipsometry N2 - In this lecture, an introduction will be given on Spectroscopic Ellipsometry, what quantities can be obtained with it, and how we use it in ELENA and other projects to determine functional parameters of thin layers at the nanoscale. T2 - Summer school ELENAM : metrology at the nanoscale CY - Fréjus, France DA - 02.06.2024 KW - Thin Layers KW - Ellipsometry KW - Nanotechnology KW - Electrical Paramters PY - 2024 AN - OPUS4-60247 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - On the use of spectroscopic imaging ellipsometry for quantification and characterisation of defects in thin films for power electronics N2 - Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing. There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation. We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines. The challenge is that most of the process technology has to be developed specifically and tailored to the high standards required by electronic applications. Today, many different CS materials can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). This technology is a direct thin layer deposition method capable of producing complex multilayer systems directly from one deposition process without the need of doping after growing. There are a number of critical defects that can originate from the deposition process when targeting electronic thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and density, as well as to characterise defects for further process optimisation. We report here on the use of spectroscopic and multispectral imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN as well as oxidised SiC. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is known as imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials. If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry methods like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis. T2 - EMRS Spring Meeting 2024 - ALTECH 2024 CY - Strasbourg, France DA - 27.05.2024 KW - Ellipsometry KW - Power Electronics KW - Layer Materials KW - Defect Analysis PY - 2024 AN - OPUS4-60266 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Piquemal, François A1 - Hoffmann, Johannes A1 - Gautier, Brice A1 - Hertwig, Andreas A1 - Frabricius, Norbert T1 - Publishable Summary for 20IND12 Elena Electrical nanoscale metrology in industry N2 - Consumer electronics, innovative quantum technologies, and Internet of Things applications all rely on semiconductors, where reliable characterisation of electrical properties at the nanoscale is essential for European innovation and competitiveness. The measurement of these properties allows the evaluation of critical parameters used to define the performance of electronic materials and components. Currently, Conductive Atomic Force Microscopes and Scanning Microwave Microscopes enable nanoscale electrical characterisation, but they are costly, complicated and, in many cases where they are used, unreliable as measurements are not traceable. The aim of the project was to make such measurements traceable for the first time, with stated uncertainties, and affordable by developing and testing cost effective instrumentation and the first “out of lab” reference standards from DC to GHz and by elaborating robust calibration methods and good practice guides using simplified uncertainty budgets. All the objectives were achieved. The project has successfully improved the user-friendly uncertainty quantification for the electrical measurements at the nanoscale in the industrial environment. The design of calibration standards has been improved and new standards for DC resistance / current as well as HF impedance have been introduced and quantified. Good practice guides for the calibration and uncertainty quantification have been written and will be available to the users’ community. New ways of determining the properties of standard samples like ellipsometry have been evaluated. The interaction with stakeholders and industry collaborators was very important for the consortium and several case studies were carried out with industry-relevant samples. All data, procedures, and example uncertainty data from the project are included into the standardisation process and two IEC standards projects have been started during this project. These standards will be used as one important dissemination ways for the results of the project. KW - Electrical Properties KW - Nanometrology KW - Scanning Probe Microscopy KW - Optical Surface Analysis PY - 2024 SP - 1 EP - 9 AN - OPUS4-61812 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Gawek, Marcel A1 - Szymoniak, Paulina A1 - Hülagü, Deniz A1 - Hertwig, Andreas A1 - Schönhals, Andreas T1 - Molecular Mobility of Thin Films and the Adsorbed Layer of Poly(2-vinylpyridine) N2 - The molecular dynamics of thin films and the adsorbed layer of poly(2-vinylpyridine) (P2VP) were investigated using broadband dielectric spectroscopy (BDS) and spectroscopic ellipsometry. Thin films of P2VP were prepared on silicon substrates and characterized to understand the influence of film thickness on the thermal glass transition temperature (Tg) and molecular mobility. The ellipsometric study revealed a decrease in Tg with decreasing film thickness, attributed to the enhanced mobility at the polymer/air interface. The adsorbed layer, prepared via the solvent leaching approach, exhibited a higher Tg compared to the bulk, indicating reduced molecular mobility due to strong polymer substrate interactions. The dielectric measurements were carried out in two different electrode configurations, crossed electrode capacitors (CEC) and nanostructured electrodes (NSE), where the latter allows for a free surface layer at the polymer/air interface. The relaxation rates of the α-relaxation measured in the CEC geometry collapse into one chart independent from the film thickness. For the thin films measured in the NSE arrangement the relaxation rates slow down with decreasing film thickness which was discussed as related to a stronger interaction of the P2VP segments with the native SiO2 at the surface of the silicon substrate compared to aluminum. It is worth to note that the effect of the enhanced mobility at the polymer/air interface is not observed in the dielectric measurements. BDS measurements in NSE geometry identified an additional relaxation process (α*-relaxation) in thin films, which was more pronounced in the adsorbed layer. This process is hypothesized to be related to molecular fluctuations within the adsorbed layer including the adsorption/desorption dynamics of segments or to a Slow Arrhenius Process (SAP) related to the equilibration dynamics deep in the glassy state. KW - Thin polymer films PY - 2025 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-637181 DO - https://doi.org/10.1039/d5sm00539f SN - 1744-6848 SP - 1 EP - 12 PB - Royal Society of Chemistry (RSC) AN - OPUS4-63718 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Richter, Anja A1 - Buchberger, G. A1 - Stifter, D. A1 - Duchoslav, J. A1 - Hertwig, Andreas A1 - Bonse, Jörn A1 - Heitz, J. A1 - Schwibbert, Karin T1 - Spatial Period of Laser-Induced Surface Nanoripples on PET Determines Escherichia coli Repellence N2 - Bacterial adhesion and biofilm formation on surfaces are associated with persistent microbial contamination, biofouling, and the emergence of resistance, thus, calling for new strategies to impede bacterial surface colonization. Using ns-UV laser treatment (wavelength 248 nm and a pulse duration of 20 ns), laser-induced periodic surface structures (LIPSS) featuring different submicrometric periods ranging from ~210 to ~610 nm were processed on commercial poly(ethylene terephthalate) (PET) foils. Bacterial adhesion tests revealed that these nanorippled surfaces exhibit a repellence for E. coli that decisively depends on the spatial periods of the LIPSS with the strongest reduction (~91%) in cell adhesion observed for LIPSS periods of 214 nm. Although chemical and structural analyses indicated a moderate laser-induced surface oxidation, a significant influence on the bacterial adhesion was ruled out. Scanning electron microscopy and additional biofilm studies using a pili-deficient E. coli TG1 strain revealed the role of extracellular appendages in the bacterial repellence observed here. KW - Laser-induced periodic surface structures (LIPSS) KW - Laser processing KW - Polyethylene terephthalate KW - Biofilm formation KW - Cell appendages KW - Biomimetic KW - F pili PY - 2021 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-537431 DO - https://doi.org/10.3390/nano11113000 VL - 11 IS - 11 SP - 3000 PB - MDPI AN - OPUS4-53743 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Schiek, Manuela A1 - Minenkov, Alexey A1 - Hollweger, Sophia A1 - Duchoslav, Jiri A1 - Erdene-Ochir, Otgonbayar A1 - Weise, Matthias A1 - Ermilova, Elena A1 - Hertwig, Andreas T1 - Optical constants of In2O3-SnO2 (Indium tin oxide, ITO) N2 - Optical constants of In2O3-SnO2 (Indium tin oxide, ITO) Minenkov et al. 2024: on glass; n,k 0.191–1.69 µm Optical constants of In2O3-SnO2 (Indium tin oxide, ITO) Minenkov et al. 2024: on Si wafer, top; n,k 0.191–1.69 µm Optical constants of In2O3-SnO2 (Indium tin oxide, ITO) Minenkov et al. 2024: on Si wafer, bottom; n,k 0.191–1.69 µm KW - Indium Tin Oxide KW - Optical constants KW - Magnetron Sputtering KW - Electrochemical Degradation KW - Spectroscopic Ellipsometry PY - 2024 UR - https://refractiveindex.info/?shelf=other&book=In2O3-SnO2&page=Minenkov-glass UR - https://refractiveindex.info/?shelf=other&book=In2O3-SnO2&page=Minenkov-wafer-top UR - https://refractiveindex.info/?shelf=other&book=In2O3-SnO2&page=Minenkov-wafer-bottom PB - Refractiveindex.info AN - OPUS4-59766 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hülagü, Deniz A1 - Ermilova, Elena A1 - Weise, Matthias A1 - de Préville, Sophie A1 - Hoffmann, Johannes A1 - Morán-Meza, José A1 - Piquemal, Francois A1 - Hertwig, Andreas T1 - Characterization of electrical properties in microstructured ITO layers using spectroscopic ellipsometry N2 - Thin indium tin oxide (ITO) layers are essential in optoelectronics due to their good electrical conductivity, optical transparency in the visible and near infrared regions, substrate adherence and chemical stability. They are widely used in photovoltaic cells, displays, and organic LEDs, and as low emissivity coatings in smart windows and energy-efficient buildings. For nanophotonic devices, understanding the interplay of ITO’s optical and electrical properties is crucial. Electrical resistivity can be tuned by modifying deposition conditions and layer thickness. However, measuring these properties, especially on microstructured surfaces, remains challenging due to the issues like homogeneity and instability during etching. Spectroscopic ellipsometry (SE), a non-destructive and phase-sensitive optical technique, offers precise measurement of thin film thickness and dielectric properties. In this study, we investigated the layer thickness, optical constants, and sheet resistance of unstructured and microstructured ITO thin layers using SE. Unstructured layers were deposited via DC-magnetron sputtering on silicon (Si) substrates in argon (Ar) atmospheres with varying oxygen (O2) flows. This multi-technique approach enhances the understanding of ITO layer structuring and provides robust methodologies for correlating optical and electrical properties, advancing metrology for nanotechnology applications and material science. It also opens the pathway to new reference samples and calibration methods for electrical properties involving device-like structured samples. T2 - ICSE10 - 10th International Conference on Spectroscopic Ellipsometry CY - Boulder, CO, USA DA - 08.06.2025 KW - Ellipsometry KW - Indium tin oxide (ITO) KW - Scanning microwave microscopy (SMM) KW - Sheet resistance calibration standards KW - ITO wet etching PY - 2025 AN - OPUS4-63631 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hülagü, Deniz A1 - Ermilova, Elena A1 - Weise, Matthias A1 - de Préville, Sophie A1 - Hoffmann, Johannes A1 - Morán‐Meza, José A1 - Piquemal, François A1 - Hertwig, Andreas T1 - Multimethod Electrical Characterization of Thin Indium Tin Oxide Films: Structuring and Calibration Sample Development for Scanning Probe Microscopy N2 - Indium tin oxide (ITO), a transparent conductive oxide, is widely used in optoelectronic applications due to its electrical conductivity, optical transparency, and chemical stability. This study employs spectroscopic ellipsometry (SE) to analyze ITO layers, enabling nondestructive determination of film thickness, dielectric functions, and bulk conductivity. Electrical properties derived from SE are compared with those obtained using the four‐point probe method (4PM) to improve metrological tools for nanotechnology applications and optimize deposition process monitoring for better control of film properties. This work also investigates the chemical stability of ITO layers under etching conditions and explores the development of new sheet resistance standards for scanning microwave microscopy (SMM). The results show that ITO resistivity, calculated from fitted SE data, increases with oxygen flow rate up to 5 cm3(STP) min−1. Good agreement is observed between sheet resistance values obtained by SE and 4PM up to 3 cm3(STP) min−1. Additionally, the sheet resistance values of a distinct set of microstructured ITO samples with different ITO layer thicknesses are determined by SMM, which are highly consistent with those obtained by the 4PM. KW - Ellipsometry KW - Indium tin oxide (ITO) KW - Scanning microwave microscopy (SMM) KW - Sheet resistance calibration standards KW - ITO wet etching PY - 2025 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-626242 DO - https://doi.org/10.1002/pssa.202400871 SN - 1862-6300 VL - 222 IS - 14 SP - 1 EP - 18 PB - Wiley CY - Hoboken, New Jersey, USA AN - OPUS4-62624 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Khropost, Diana A1 - Riethmüller, Franziska A1 - Döhring, Thorsten A1 - Flachs, Dennis A1 - Hülagü, Deniz A1 - Hertwig, Andreas A1 - Cotroneo, Vincenzo A1 - gibertini, eugenio T1 - Polydopamine – a bio-inspired polymer for X-ray mirror coatings and other technical applications N2 - Although the organic molecule dopamine (3,4-dihydroxyphenethylamine) is commonly known as one of the “hormones of happiness”, thin polymer films of polydopamine (PDA) also have interesting technical properties. PDA is a very strong glue that sticks on almost everything, even under water. In nature, PDA is found in the byssal thread cuticles of mussels. When produced by dip-coating, the self-organizing PDA layers grow in a reproducible thickness of single or multiple molecule monolayers of a few nanometres thickness only. Here we present an optimized preparation regime as derived from polymerization analysis through absorption spectroscopy. One application is the use of thin PDA overcoatings to increase the soft X-ray reflectivity of astronomical X-ray mirrors. Furthermore, we give an outlook to other technical applications for this interesting material, presenting this bio-inspired organic polymer as an innovative technical solution for the future, with applications such as PDA-based super-capacitors and its promising role in enhancing separator materials for batteries. T2 - SPIE Optics + Optoelectronics 2025 CY - Prague, Czech Republic DA - 07.04.2025 KW - X-ray mirrors KW - Reflectivity KW - Polydopamine KW - Ellipsometry PY - 2025 DO - https://doi.org/10.1117/12.3056298 VL - 13531 SP - 1 EP - 11 PB - SPIE AN - OPUS4-63630 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Khropost, Diana A1 - Riethmüller, Franziska A1 - Stanik, Eva A1 - Döhring, Thorsten A1 - Hertwig, Andreas A1 - Hülagü, Deniz T1 - Polydopamine -a bionic material and its potential applications for batteries N2 - Polydopamine (PDA) recently came into focus as an innovative material for applications in various technical fields. It is a very strong glue that sticks on almost everything, even under water: In nature, PDA is found in the byssal thread cuticles of mussels. In 2007, Lee et al. first showed that dipping substrates into a solution of dopamine results in the formation of thin PDA films on numerous materials. The simple preparation and the high durability of these coatings have stimulated growing research interest and a wide variety of applications in energy, biomedical and environmental science, and other fields. We have investigated thin layers of PDA with different methods including ellipsometry, tactile measurements of the layer thickness and in situ absorption measurements during the polymerization process. During polymerization the dopamine solution shows a progressive colour change from transparent to brown that has been monitored by spectrometric measurements. The increasing absorption of the cuvette with dopamine solution can be seen in figure 1. The absorption levels off after approximately 2,5 h of polymerization time, thus indicating termination of the primary formation of the PDA film. This data shows that for homogeneous layer growth it is advantageous to interrupt the process after two hours. To generate a higher layer thickness, the samples need to be cleaned and immersed in a fresh dopamine solution subsequently. In addition, ellipsometry measurements on polydopamine layers could determine the corresponding coating thickness as well as its complex refractive index over a broad wavelength range. T2 - Materials Week 2025 CY - Frankfurt am Main, Germany DA - 02.04.2025 KW - Polydopamine KW - Ellipsometry KW - Leyer thickness PY - 2025 AN - OPUS4-63636 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Scholtz, Lena A1 - Tavernaro, Isabella A1 - Eckert, J. G. A1 - Lutowski, Marc A1 - Geißler, Daniel A1 - Hertwig, Andreas A1 - Hidde, Gundula A1 - Bigall, N. C. A1 - Resch-Genger, Ute T1 - Influence of nanoparticle encapsulation and encoding on the surface chemistry of polymer carrier beads N2 - Surface-functionalized polymer beads encoded with molecular luminophores and nanocrystalline emitters such as semiconductor nanocrystals, often referred to as quantum dots (QDs), or magnetic nanoparticles are broadly used in the life sciences as reporters and carrier beads. Many of these applications require a profound knowledge of the chemical nature and total number of their surface functional groups (FGs), that control bead charge, colloidal stability, hydrophobicity, and the interaction with the environment and biological systems. For bioanalytical applications, also the number of groups accessible for the subsequent functionalization with, e.g., biomolecules or targeting ligands is relevant. In this study, we explore the influence of QD encoding on the amount of carboxylic acid (COOH) surface FGs of 2 μm polystyrene microparticles (PSMPs). This is done for frequently employed oleic acid and oleylamine stabilized, luminescent core/shell CdSe QDs and two commonly used encoding procedures. This included QD addition during bead formation by a thermally induced polymerization reaction and a post synthetic swelling procedure. The accessible number of COOH groups on the surface of QD-encoded and pristine beads was quantified by two colorimetric assays, utilizing differently sized reporters and electrostatic and covalent interactions. The results were compared to the total number of FGs obtained by a conductometric titration and Fourier transform infrared spectroscopy (FTIR). In addition, a comparison of the impact of QD and dye encoding on the bead surface chemistry was performed. Our results demonstrate the influence of QD encoding and the QD-encoding strategy on the number of surface FG that is ascribed to an interaction of the QDs with the carboxylic acid groups on the bead surface. These findings are of considerable relevance for applications of nanoparticle-encoded beads and safe-by-design concepts for nanomaterials. KW - Optical spectroscopy KW - Particle KW - Optical assay KW - IR spectroscopy KW - Fluorescence KW - Quantum yield KW - Quality assurance KW - Nano KW - Synthesis KW - Surface chemistry KW - Quantification KW - Method KW - Conductometry PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-581502 DO - https://doi.org/10.1038/s41598-023-38518-7 SN - 2045-2322 VL - 13 IS - 1 SP - 1 EP - 15 PB - Springer Nature CY - London AN - OPUS4-58150 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Normung in der Oberflächen-und Schichttechnik N2 - Report über Normungsaktivitäten im Bereich der Messtechnk an Oberflächen und dünnen Schichten. Übersicht über Methoden und Vorstellung von laufenden Projekten mit Bezug zur Normung T2 - PlasmaGermany Herbstmeeting 2022 CY - Bielefeld, Germany DA - 07.11.2022 KW - Oberflächenmesstechnik KW - Spektroskopie KW - Ellipsometrie KW - XPS KW - Dünne Schichten PY - 2022 AN - OPUS4-56483 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Almalla, A. A1 - Hertwig, Andreas A1 - Fischer, Daniel A1 - Özcan Sandikcioglu, Özlem A1 - Witt, Julia T1 - Development of layer-by-layer assembled thin coatings on aluminium alloy AA2024-T3 for high resolution studies of local corrosion processes N2 - The aim of this study is to develop nanometer-thin epoxy-based films on aluminium alloy AA2024-T3 as a model coating system for high resolution corrosion studies. Spin coating was used for the layer-by-layer (LbL) deposition of poly-(ethylenimine) (PEI) and poly([o-cresyl glycidyl ether]-co-formaldehyde) (CNER) bilayers. The film chemistry and the cross-linking process were characterized by means of Fourier-transform infrared spectroscopy (FTIR). Ellipsometric data confirmed the linear increase of film thickness. The potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) results indicate the improvement of the film barrier properties with increasing film thickness. Mapping of the topography and the volta potential was performed by means of scanning Kelvin probe force microscopy (SKPFM). The results indicate the presence of a homogeneous film structure, while the intermetallic phases can still be identified below the coating. The SKPFM Analysis confirmed that the model films are suitable for investigation of corrosion processes at the coating/metal interface. KW - Spectroscopy KW - Coatings KW - Electrochemistry KW - Microscopy KW - Resins PY - 2020 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-514627 DO - https://doi.org/10.1002/app.49826 SN - 0021-8995 VL - 137 IS - 48 SP - e49826-1 EP - e49826-9 PB - Wiley CY - New York, NY AN - OPUS4-51462 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rastgou, Masoud A1 - Hülagü, Deniz A1 - Danilenko, Aleksandr A1 - Manoocheri, Farshid A1 - Hertwig, Andreas A1 - Ikonen, Erkki T1 - Comparison of thin-film thickness measurements using ellipsometry and reflectometry with uniform samples N2 - This study evaluates spectroscopic ellipsometry and reflectometry using high-quality SiO2 and Al2O3 thin-films on Si substrates, thereby facilitating a detailed assessment of consistency of measurement results and uncertainty analyses. The results with detailed uncertainty budgets indicate good agreement between the two methods across a broad layer thickness range from 10 nm to 2000 nm, with deviations remaining well within the measurement uncertainties. Ellipsometry results have lower uncertainty than reflectometry results especially with the thinner layers, whereas reflectometry uncertainties are lower with the thickest layers studied. This work underscores the importance of rigorous thickness characterization and reliable uncertainty evaluation as critical factors in advancing both modeling and measurement practices in thin-film metrology. KW - Ellipsometry KW - Reflectometry KW - Thin Film Metrology KW - Measurement Accuracy PY - 2026 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-655209 DO - https://doi.org/10.1088/1681-7575/ae3964 SN - 0026-1394 VL - 63 IS - 1 SP - 1 EP - 14 PB - IOP Publishing CY - Bristol, UK AN - OPUS4-65520 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - How can ellipsometry help us to understand ultrashort pulse laser material processing? N2 - Laser processing of materials is a key technology in many fields of modern production. Still, more work is needed to understand the mechanisms behind laser material interaction. Recently, ellipsometry has become a valuable tool for investigating materials pre and post laser irradiation. Imaging ellipsometry and time-resolved methods boost this work and open up the path to a much better understanding of light interaction with solid state surfaces. We use spectroscopic single-spot and imaging ellipsometry to investigate treated and untreated surfaces. The goal is to determine changes in the material dielectric function, as well as geometric changes in surface layers (oxidation, modification, ablation, blistering). A good knowledge of bulk dielectric functions is often needed to model processes caused by laser irradiation. Imaging ellipsometry can play an important role in the post-analysis of laser treated sites on surfaces if combined with other methods such as IR-spectroscopy, SEM, topometric methods, Raman-spectroscopy, and XPS. In this work, we present the results of several studies to investigate laser-treated materials by means of ellipsometry. We cover the following topics: • Ablation of amorphous carbon layers, role of intra-layer interference effects on the result • Amorphisation behaviour of c-Si, depending on the crystal orientation, • Understanding the role of bulk and surface properties on ablation behaviour of classical and multicomponent high-entropy metals, T2 - 13th Workshop on Spectroscopic Ellipsometry CY - Genova, Italy DA - 09.02.2026 KW - Ellipsometry KW - Laser Ablation KW - Femtosecond Technology KW - Surface and Thin Layer Technology KW - Laser Surface processing PY - 2026 AN - OPUS4-65521 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hertwig, Andreas T1 - Accuracy on all scales: Hybrid metrology for micro- and nanomanufacturing N2 - In this presentation, we discuss hybrid metrology and correlative imaging. These techniques are used to improve the design and quality monitoring of nanomaterials used in energy technology and for referencing the properties of nanoparticles. T2 - EMN for Advanced Manufacturing workshop CY - Berlin, Germany DA - 22.05.2024 KW - Nanotechnology KW - Nanoanalytics KW - Correlative Spectroscopy KW - Correlative Imaging PY - 2024 AN - OPUS4-60240 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Müller, Kai A1 - Mirabella, Francesca A1 - Knigge, Xenia A1 - Mezera, Marek A1 - Weise, Matthias A1 - Sahre, Mario A1 - Wasmuth, Karsten A1 - Voss, Heike A1 - Hertwig, Andreas A1 - Krüger, Jörg A1 - Radnik, Jörg A1 - Hodoroaba, Vasile-Dan A1 - Bonse, Jörn T1 - Chemical and topographical changes upon sub-100-nm laser-induced periodic surface structure formation on titanium alloy: the influence of laser pulse repetition rate and number of over-scans N2 - Titanium and its alloys are known to allow the straightforward laser-based manufacturing of ordered surface nanostructures, so-called high spatial frequency laser-induced periodic surface structures (HSFL). These structures exhibit sub-100 nm spatial periods – far below the optical diffraction limit. The resulting surface functionalities are usually enabled by both, topographic and chemical alterations of the nanostructured surfaces. For exploring these effects, multi-method characterizations were performed here for HSFL processed on Ti–6Al–4V alloy upon irradiation with near-infrared ps-laser pulses (1030 nm, ≈1 ps pulse duration, 1–400 kHz) under different laser scan processing conditions, i.e., by systematically varying the pulse repetition frequency and the number of laser irradiation passes. The sample characterization involved morphological and topographical investigations by scanning electron microscopy (SEM), atomic force microscopy (AFM), tactile stylus profilometry, as well as near-surface chemical analyses hard X-ray photoelectron spectroscopy (HAXPES) and depth-profiling time-of-flight secondary ion mass spectrometry (ToF-SIMS). This provides a quantification of the laser ablation depth, the geometrical HSFL characteristics and enables new insights into the depth extent and the nature of the non-ablative laser-induced near-surface oxidation accompanying these nanostructures. This allows to answer the questions how the processing of HSFL can be industrially scaled up, and whether the latter is limited by heat-accumulation effects. T2 - 2023 E-MRS Spring Meeting, Symposium L "Making light matter: lasers in material sciences and photonics" CY - Strasbourg, France DA - 29.05.2023 KW - Laser-induced periodic surface structures (LIPSS) KW - Ultrashort laser pulses KW - Laser processing KW - Hard X-ray photoelectron spectroscopy (HAXPES) KW - Time-of-flight secondary ion mass spectrometry (ToF-SIMS) PY - 2023 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-589902 UR - https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.202300719 DO - https://doi.org/10.1002/pssa.202300719 SN - 1862-6319 VL - 221 IS - 15 SP - 1 EP - 12 PB - Wiley-VCH GmbH CY - Weinheim AN - OPUS4-58990 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Sachse, René A1 - Pfüger, Mika A1 - Velasco-Vélez, Juan-Jesús A1 - Sahre, Mario A1 - Radnik, Jörg A1 - Bernicke, Michael A1 - Bernsmeier, Denis A1 - Hodoroaba, Vasile-Dan A1 - Krumrey, Michael A1 - Strasser, Peter A1 - Kraehnert, Ralph A1 - Hertwig, Andreas T1 - Assessing optical and electrical properties of highly active IrOx catalysts for the electrochemical oxygen evolution reaction via spectroscopic ellipsometry N2 - Efficient water electrolysis requires highly active electrodes. The activity of corresponding catalytic coatings strongly depends on material properties such as film thickness, crystallinity, electrical conductivity, and chemical surface speciation. Measuring these properties with high accuracy in vacuum-free and nondestructive methods facilitates the elucidation of structure−activity relationships in realistic environments. Here, we report a novel approach to analyze the optical and electrical properties of highly active oxygen evolution reaction (OER) catalysts via spectroscopic ellipsometry (SE). Using a series of differently calcined, mesoporous, templated iridium oxide films as an example, we assess the film thickness, porosity, electrical resistivity, electron concentration, electron mobility, and interband and intraband transition energies by modeling of the optical spectra. Independently performed analyses using scanning electron microscopy, energy-dispersive X-ray spectroscopy, ellipsometric porosimetry, X-ray reflectometry, and absorption spectroscopy indicate a high accuracy of the deduced material properties. A comparison of the derived analytical data from SE, resonant photoemission spectroscopy, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy with activity measurements of the OER suggests that the intrinsic activity of iridium oxides scales with a shift of the Ir 5d t2g sub-level and an increase of p−d interband transition energies caused by a transition of μ1-OH to μ3-O species. KW - Spectroscopic ellipsometry KW - Electrocatalysis KW - Oxygen evolution reaction KW - Mesoporous iridium oxide films KW - Non-destructive ambient analysis KW - Intrinsic OER activity KW - Complementary methodology and metrology PY - 2020 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-516288 DO - https://doi.org/10.1021/acscatal.0c03800 SN - 2155-5435 VL - 10 IS - 23 SP - 14210 EP - 14223 PB - American Chemical Society AN - OPUS4-51628 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Voss, Heike A1 - Knigge, Xenia A1 - Knapic, D. A1 - Weise, Matthias A1 - Sahre, Mario A1 - Hertwig, Andreas A1 - Sacco, A. A1 - Rossi, A. M. A1 - Radnik, Jörg A1 - Müller, Kai A1 - Wasmuth, Karsten A1 - Krüger, Jörg A1 - Hassel, A. W. A1 - Hodoroaba, Vasile-Dan A1 - Bonse, Jörn T1 - Picosecond laser processing of hierarchical micro–nanostructures on titanium alloy upon pre- and postanodization: morphological, structural, and chemical effects N2 - Recent publications indicate that the order of electrochemical anodization (before or after the laser processing step) plays an important role for the response of bone-forming osteoblasts—an effect that can be utilized for improving permanent dental or removable bone implants. For exploring these different surface functionalities, multimethod morphological, structural, and chemical characterizations are performed in combination with electrochemical pre- and postanodization for two different characteristic microspikes covered by nanometric laser-induced periodic surface structures on Ti–6Al–4V upon irradiation with near-infrared ps-laser pulses (1030 nm wavelength, ≈1 ps pulse duration, 67 and 80 kHz pulse repetition frequency) at two distinct sets of laser fluence and beam scanning parameters. This work involves morphological and topographical investigations by scanning electron microscopy and white light interference microscopy, structural material examinations via X-ray diffraction, and micro-Raman spectroscopy, as well as near-surface chemical analyses by X-ray photoelectron spectroscopy and hard X-ray photoelectron spectroscopy. The results allow to qualify the mean laser ablation depth, assess the spike geometry and surface roughness parameters, and provide new detailed insights into the near-surface oxidation that may affect the different cell growth behavior for pre- or postanodized medical implants. T2 - 2023 E-MRS Spring Meeting, Symposium L "Making light matter: lasers in material sciences and photonics" CY - Strasbourg, France DA - 29.05.2023 KW - Hierarchical micro-nanostructures KW - Laser-induced periodic surface structures (LIPSS) KW - Ultrashort laser pulses KW - Ti-6Al-4V alloy KW - X-ray photoelectron spectroscopy PY - 2024 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-601962 DO - https://doi.org/10.1002/pssa.202300920 SN - 1862-6319 SP - 1 EP - 11 PB - Wiley-VCH GmbH CY - Weinheim AN - OPUS4-60196 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Sachse, René A1 - Hodoroaba, Vasile-Dan A1 - Kraehnert, R. A1 - Hertwig, Andreas T1 - Multilevel effective material approximation for modeling ellipsometric measurements on complex porous thin films N2 - Catalysts are important components in chemical processes because they lower the activation energy and thus determine the rate, efficiency and selectivity of a chemical reaction. This property plays an important role in many of today’s processes, including the electrochemical splitting of water. Due to the continuous development of catalyst materials, they are becoming more complex, which makes a reliable evaluation of physicochemical properties challenging even for modern analytical measurement techniques and industrial manufacturing. We present a fast, vacuum-free and non-destructive analytical approach using multi-sample spectroscopic ellipsometry to determine relevant material parameters such as film thickness, porosity and composition of mesoporous IrOx–TiOy films. Mesoporous IrOx–TiOy films were deposited on Si wafers by sol–gel synthesis, varying the composition of the mixed oxide films between 0 and 100 wt%Ir. The ellipsometric modeling is based on an anisotropic Bruggeman effective medium approximation (a-BEMA) to determine the film thickness and volume fraction of the material and pores. The volume fraction of the material was again modeled using a Bruggeman EMA to determine the chemical composition of the materials. The ellipsometric fitting results were compared with complementary methods, such as scanning electron microscopy (SEM), electron probe microanalysis (EPMA) as well as environmental ellipsometric porosimetry (EEP). KW - Electrochemical catalysts KW - Mixed metal oxide KW - Multi-sample analysis KW - Spectroscopic ellipsometry KW - Thin mesoporous films PY - 2022 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-551026 DO - https://doi.org/10.1515/aot-2022-0007 SN - 2192-8584 SN - 2192-8576 VL - 11 IS - 3-4 (Topical issue: Ellipsometry) SP - 137 EP - 147 PB - De Gruyter CY - Berlin AN - OPUS4-55102 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Hertwig, Andreas T1 - A multi-method study of femtosecond laser modification and ablation of amorphous hydrogenated carbon coatings N2 - We report here the optical constants of ECR (MW) and RF generated a-C:H layers before and after laser irradiation. The work is described in the following publication: https://doi.org/10.1007/s00339-024-07980-z The data uploaded are the optical constants (n and k) of the a-C:H layers before (base) and after (ROIx) laser irradiation. Please see the article for the nomenclature of the data and for the methods applied ot produce the layers, laser shots, and OK data. KW - Spectroscopic ellipsometry KW - Amorphous hydrogenated carbon layers KW - Laser materials processing KW - Correlative imaging spectroscopy PY - 2024 DO - https://doi.org/10.5281/zenodo.13928596 PB - Zenodo CY - Geneva AN - OPUS4-61855 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Sachse, René A1 - Kotil, Leyla A1 - Matjacic, Lidija A1 - McMahon, Greg A1 - Bernicke, Michael A1 - Bernsmeier, Denis A1 - Kraehnert, Ralph A1 - Hertwig, Andreas A1 - Hodoroaba, Vasile-Dan T1 - Morphological and Chemical Nanoscale Analysis of Mesoporous Mixed IrOx-TiOy Thin Films as Electrode Materials N2 - orous films play an important role particularly in energy applications like photovoltaics, electrolysis or batteries. Thin film properties such as thickness, chemical composition, crystallinity of the framework, and porosity define the activity of the porous films. The accurate morpho-chemical characterisation of mesoporous thin films is a challenging analytical task which requires the consideration of new analytical approaches based on the combination of data of different methods able to address the structure and chemical composition at the nanoscale. In this contribution we characterise thin mesoporous iridium-titanium mixed oxide film properties by Electron Probe Microanalysis (EPMA) with Energy-Dispersive X-ray Spectroscopy (EDS) at an SEM applied in a dedicated “thin film analysis” approach (1). Thus, the film mass deposition, film thickness and the film density can be determined. Further, by dividing the measured film density to an assumed (theoretical) metal oxide framework (skeletal) density, the thin film porosity can be extracted, too. In order to assess the homogeneity of the thin film properties like the chemical composition, Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and Auger Electron Spectrometry are applied in the depth profiling mode, so that possible in-depth gradients are detected. Lateral inhomogeneities in the chemical composition and structure of the thin mesoporous films are also identified by applying the same methods in the line-scan or mapping mode, which can be further combined with in-depth sputtering for 3D information. The role of the spatial resolution of the analytical methods considered, which can go down well below 100 nm, will be highlighted. KW - Mesoporous thin films KW - Imaging KW - TiO2 KW - Ir oxid KW - Auger electron spectroscopy KW - ToF-SIMS KW - SEM/EDX PY - 2024 DO - https://doi.org/10.1093/mam/ozae044.252 VL - 30 IS - Supplement 1 SP - 541 EP - 542 PB - Oxford University Press (OUP) AN - OPUS4-61185 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Sachse, René A1 - Moor, Maëlle A1 - Kraehnert, Ralph A1 - Hodoroaba, Vasile-Dan A1 - Hertwig, Andreas T1 - Ellipsometry-based approach for the characterization of mesoporous thin films for H2 technologies N2 - Porous thin layer materials are gaining importance in different fields of technology and pose a challenge to the accurate determination of materials properties important for their function. In this work, we demonstrate a hybrid measurement technique using ellipsometry together with other independent methods for validation. Ellipsometry provides information about the porosity of different mesoporous films (PtRuNP/OMC = 45%; IrOx = 46%) as well as about the pore size (pore radius of ca. 5 nm for PtRuNP/OMC). In addition, the electronic structure of a material, such as intraband transitions of a mesoporous IrOx film, can be identified, which can be used to better understand the mechanisms of chemical processes. In addition, we show that ellipsometry can be used as a scalable imaging and visualization method for quality assurance in production. These require accurate and traceable measurements, with reference materials playing an important role that include porosity and other related properties. We show that our novel analytical methods are useful for improving analytical work in this entire field. KW - Porous materials KW - Electrolysis KW - Spectroscopic ellipsometry KW - Hybrid metrology measurement KW - Electron microscopy PY - 2021 DO - https://doi.org/10.1002/adem.202101320 SP - 1 EP - 17 PB - Wiley-VCH AN - OPUS4-53960 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hülagü, Deniz A1 - Hirahara, Kenta A1 - Fischer, Daniel A1 - Florian, Camilo A1 - Schusterbauer, Robert A1 - Ermilova, Elena A1 - Krüger, Jörg A1 - Unterreiner, Andreas-Neil A1 - Bonse, Jörn A1 - Hertwig, Andreas T1 - Using imaging ellipsometry to understand femtosecond laser materials processing of group IV materials N2 - Laser materials processing is an important tool for creating and shaping new materials. Laser machining, especially with ultrashort pulses offers the modification of surfaces, thin coatings, and bulk materials with an unprecedented precision and control. The most desired feature of pulsed laser processing in the femtosecond range is that the heat-affected zone in the irradiated material will be extremely small. To better understand the mechanisms involved during laser irradiation, it is important to analyse the outcome of light-matter interaction with spectroscopic methods. Ellipsometry, especially spectroscopic imaging ellipsometry (SIE), has become an important tool for this in recent times, as it gives access to local layer thicknesses, materials dielectric functions, and features like changes in surface roughness. This work includes an overview over our recent studies examining near-infrared fs-laser surface processing of different group IV materials. The superficial phase change of silicon from crystalline to amorphous has been investigated in the past as the result of laser processing strongly depends on the crystal orientation. Moreover, SIE is capable of determining the properties of buried a-Si interfaces with micrometer lateral and sub-nanoneter vertical precision. Additionally, the growth of native and laser-induced oxides can be revealed. T2 - ICSE10 - 10th International Conference on Spectroscopic Ellipsometry CY - Boulder, CO, USA DA - 08.06.2025 KW - Laser surface ablation KW - Amorphous Carbon KW - Silicon KW - Correlative Imaging Ellipsometry PY - 2025 AN - OPUS4-63633 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hirahara, Kenta A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Weise, Matthias A1 - Ermilova, Elena A1 - Schusterbauer, Robert A1 - Unterreiner, Andreas-Neil A1 - Hertwig, Andreas T1 - A multi-method study of femtosecond laser modification and ablation of amorphous hydrogenated carbon coatings N2 - e present a study on femtosecond laser treatment of amorphous hydrogen-containing carbon coatings (a-C:H). The coatings were deposited on silicon wafers by a plasma-assisted chemical vapour deposition (PA-CVD), resulting in two different types of material with distinct properties (referred to as “absorbing” and “semi-transparent” coatings in the following). The samples were laser-treated with single fs-laser pulses (800 nm center wavelength, 35 fs pulse duration) in the ablative regime. Through a multi-method approach using topometry, Raman spectroscopy, and spectroscopic imaging ellipsometry, we can identify zones and thresholds of diferent fuence dependent efects and have access to the local dielectric function. The two coating materials react signifcantly diferent upon laser treatment. We determined the (non-ablative) modifcation threshold fuence for the absorbing coating as 3.6 × 10−2 Jcm−2 and its ablation threshold as 0.22 Jcm−2. The semi-transparent coating does not show such a low-fuence modifcation but exhibits a characteristic interference-based intra-flm ablation mechanism with two distinguishable ablation thresholds at 0.25 and 0.28 Jcm−2, respectively. The combination of tailored layer materials and correlative imaging spectroscopic methods delivers new insights into the behaviour of materials when treated with ultrashort-pulse laser radiation KW - Amorphous Hydrogenated Carbon Coatings KW - Correlative Imaging Measurement Techniques KW - Hybrid Metrology KW - Imaging Spectroscopy KW - Spectroscopic Ellipsometry KW - Ultra-short Pulse Laser Materials Processing PY - 2024 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-617829 DO - https://doi.org/10.1007/s00339-024-07980-z VL - 130 IS - 12 SP - 1 EP - 17 PB - Springer Science and Business Media LLC AN - OPUS4-61782 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hülagü, Deniz A1 - Hertwig, Andreas T1 - Correlative analysis of graphene: Advancing ellipsometry as a fast routine method N2 - Graphene (G) and graphene oxide (GO) are key materials for various applications, yet their structural and thickness inhomogeneities calls for rapid, reliable characterization. In this work, we performed a correlative analysis, combining spectroscopic (SE) and imaging ellipsometry (IE) with complementary microscopy techniques to investigate monolayer graphene and GO flakes on SiO₂/Si substrates. SEM, owing to its high resolution and excellent contrast, delivered a comprehensive overview of the monolayer graphene (Figure 1a) and enabled the clear identification of individual GO flakes (c). However, SEM does not provide layer-thickness information. In this case, SE served as a fast and non-destructive method capable of quantitative thickness determination through optical modeling, revealing a graphene layer thickness of 0.7 nm (b), corresponding to a monolayer. The GO flake identified by SEM was subsequently analyzed by AFM, a well-established technique providing nanoscale height profiles with high accuracy (d–f). AFM results further revealed flake thicknesses of a few monolayers. However, AFM is time-consuming, restricted to small scan areas, and does not offer a full overview of the sample. WLIM complemented these results by providing large-area imaging, enabling the visualization of multiple flakes simultaneously. Nevertheless, it is not able to quantify the exact thickness (e). In contrast, IE enabled non-destructive, substrate-independent thickness of GO flakes with single-atomic-layer precision and improved sensitivity, once the ellipsometer settings were optimized for material and thickness contrast and fixed during imaging, bridging the gap between overview imaging and quantitative nanoscale analysis (g–h). While SE provides non-destructive, quantitative thickness information for homogeneous monolayer graphene, GO flakes require imaging-based methods. Therefore, IE represents an attractive alternative, offering large-area maps of GO flakes together with local layer-thickness information. This correlative approach establishes a foundation for standardized, large-area quality assessment of such 2D materials. T2 - 13th Workshop on Spectroscopic Ellipsometry WSE 2026 CY - Genova, Italy DA - 09.02.2026 KW - Monolayer graphene KW - Graphene oxide KW - Correlative Analysis KW - SEM KW - Spectroscopic ellipsometry KW - Imaging ellipsometry KW - AFM PY - 2026 AN - OPUS4-65708 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -