TY - CONF A1 - Hertwig, Andreas T1 - Multi-methods surface analysis involving spectroscopic ellipsometry: New measurements for optical and energy applications N2 - Surface analysis is still gaining importance, as most modern technology is in essence surface and thin film technology. In microelectronics and optics but also in many fields of energy storage and conversion, thin surface layers or structured surfaces are key components. Optical surface measurements are useful because of their reliability, robustness, and scalability – properties, which are especially desirable in a production environment. However, many of these methods take require considerable effort in data analysis. Spectroscopic ellipsometry (SE) is maybe the prime example of this class of methods. To combine the advantages of SE with metrological trueness and traceability, we combine it in a group of other methods, such as electron microscopy, instrumental surface analysis, X-ray diffraction. This presentation will give an overview on the principles of SE, its available quantities and the general properties of this measurement technique. Several examples from current and past projects of BAM-6.7 will show how a measurement community involving ellipsometry can benefit many fields of interest, from polymer science to energy applications. In the context of creating a “measurement landscape”, standardisation and standard compliance play an important role. The efforts of BAM in standardisation and accrediting of ellipsometry will be shown demonstrating the possible impact on quality assurance in different fields of technology. T2 - Abteilungskolloquium 2018, BAM CY - BAM, Berlin, Germany DA - 12.12.2018 KW - Spectroscopic ellipsometry KW - Surface analysis KW - Thin film technology KW - Reference materials PY - 2018 AN - OPUS4-47671 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schönhals, Andreas A1 - Madkour, Sherif A1 - Gawek, Marcel A1 - Szymoniak, Paulina A1 - Hertwig, Andreas T1 - Growth kinetics and molecular mobility of irreversibly adsorbed layers in thin polymer films N2 - In well-annealed thin polymer films, with non-repulsive polymer/substrate interactions, an irreversibly adsorbed layer is expected to from. These adsorbed layers have shown greate potential for technological applications. However, their growth kinetics and molecular dynamics are still not fully understood. This is partly due to the hard accessibility of these layers in thin films. Here, the irreversibly adsorbed layers of homopolymer thin films are revealed by solvent-leaching experiments. First, the growth kinetics of these layers is investigated as a function of annealing time, annealing temperature, leaching time and the original filme thickness. The film thickness, topography and the quality of the adsorbed layer is controlled by Atomic Force Microscopy (AFM). Secondly, the molecular mobility of the adsorbed layer is investigated by Broadband Dielectric Spectroscopy (BDS). A recently developed nanostructured capacitor arrangement is employed to measure the layer with a free surface. The results are quantitatively compared and discussed with respect to recently published work. T2 - 10th Conference on Broadband Dielectric Spectroscopy and its Applications CY - Brussles, Belgium DA - 26.08.2018 KW - Thin polymer films PY - 2018 AN - OPUS4-45837 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Kormunda, M. A1 - Hertwig, Andreas A1 - Rysanek, P. A1 - Ivanov, L. T1 - Optical and Electrical Properties of reactive/nonreactive Magnetron Deposited SnZnOxCoatings Annealed at Various Temperatures N2 - ZnSnOx coatings were deposited from two 2in magnetron targets made of ZnO and SnO2 connected to DC pulsed and RF power supplies, respectively. The pure Ar and reactive gas mixture Ar/O2 were used. DC pulsed power applied on ZnO target was kept constant 50W 50kHz, 20% d.c. and the RF power applied on SnO2 target was set to values from 0W (pure ZnO deposited) up to 150W (up to 8 at.% of Sn in films). The deposited films were investigated by multiple techniques as deposited at RT as well as after annealing at temperatures 200o C and 450o C. The lower annealing temperature is still compatible with many of common polymeric substrates. The amount of Sn in the films is proportional to applied RF power on SnO2 target. But there is also significant influence of the post Deposition annealing on the film compositions. The ratio Zn/Sn is reduced by the annealing process. Therefore the annealing is promoting the migration of Sn toward the surface and Zn to inside. Moreover the films deposited in oxygen rich reactive gas mixture does not reduces the resistivity with added Sn in contrary to films deposited in Ar where the resistivity was reduced by 5 orders of magnitudes. The plasma parameters were investigated and mean energies of dominant species were in DC pulsed only about 3eV and DC + RF powered plasma up to 15eV. The expected higher energetic particles in the RF influenced plasma deliver an additional energy to the growing film. Therefore, we observed systematic differences between refractive indexes in the films deposited with low RF powered SnO2 magnetron at RT and post-annealed at 200 ° and practically no difference between RT and post-annealed film at higher RF power above 50 W. The XRD results proved the transitions from an amorphous to more crystalline structure by post-annealing of the films. T2 - PSE 2018 - 16th Conference on Plasma Surface Engineering CY - Garmisch-Partenkirchen, Germany DA - 17.09.2018 KW - Reactive sputtering KW - Plasma diagnostics KW - Optical films KW - TCO PY - 2018 AN - OPUS4-46347 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Gawek, Marcel A1 - Madkour, Sherif A1 - Hertwig, Andreas A1 - Schönhals, Andreas T1 - Growth Kinetics and Molecular Mobility of Irreversibly Adsorbed Layers in Thin Films of P2VP and PVME N2 - In well-annealed thin polymer films, with non-repulsive polymer/substrate interactions, an irreversibly adsorbed layer is formed. These adsorbed layers have shown enormous potential for technological applications. Due to the hard accessibility of these layers, their growth kinetics and molecular dynamics are still not fully understood. Here, the irreversibly adsorbed layers of Poly(2-vinylpyridine) (P2VP) and Poly(vinyl methyl ether) (PVME) thin films are revealed by solvent-leaching experiments. The growth kinetics of these layers is investigated as a function of original film thickness and annealing times. The thickness, topography and quality of the adsorbed layer is determined with Atomic Force Microscopy (AFM) and spectroscopic ellipsometry. Additionally, the molecular mobility of the adsorbed layer is investigated with Broadband Dielectric Spectroscopy (BDS). A recently developed nanostructured capacitor (NSC) is employed to measure the adsorbed layers with a free surface layer depending on annealing and solvent-leaching time. The results are quantitatively compared and discussed with respect to recently published work. T2 - Spring Meeting of German Physical Society CY - Regensburg, Germany DA - 31.03.2019 KW - Adsorbed layer KW - Thin polymeric films PY - 2019 AN - OPUS4-47766 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Sachse, René A1 - Hertwig, Andreas A1 - Kraehnert, R. A1 - Hodoroaba, Vasile-Dan T1 - Analysis of mesoporous iridium oxide thin films by the combined methodical approach SEM/EDS/STRATAGem N2 - For the determination of porosity of Ir oxide thin films, electron probe microanalysis (EPMA) can be used as part of a combined SEM/EDS/STRATAGem analysis. The mass deposition (in μg cm-2) of films was calculated with the analysis software STRATAGem via k-values measured with EDS. The average density of coated films was obtained from the mass deposition and the film thickness as measured by the cross-section SEM. The porosity was calculated by dividing the average film density by the bulk (theoretical) density of the film material. Film porosities were counterchecked by spectroscopic ellipsometry (SE) using the Bruggeman effective medium approximation (BEMA). The results obtained by both analytical approaches/methods used, SEM/EDS/STRATAGem and SE were in good agreement. KW - Porous thin films KW - Iridium oxide KW - Electron probe microanalysis (EPMA) KW - Spectroscopic ellipsometry PY - 2018 UR - https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/analysis-of-mesoporous-iridium-oxide-thin-films-by-the-combined-methodical-approach-semedsstratagem/7607018338B542D8B8C4D944392781EF DO - https://doi.org/10.1017/S1431927618004300 SN - 1431-9276 SN - 1435-8115 VL - 24 IS - S1 (August) SP - 762 EP - 763 PB - Cambridge University Press CY - New York, NY, U.S.A. AN - OPUS4-45951 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hodoroaba, Vasile-Dan A1 - Sachse, René A1 - Hertwig, Andreas A1 - Kraehnert, R. T1 - Analysis of Mesoporous Iridium Oxide Thin Films by the Combined Methodical Approach SEM/EDS/STRATAGem N2 - For the determination of porosity of Ir oxide thin films, electron probe microanalysis (EPMA) can be used as part of a combined SEM/EDS/STRATAGem analysis. The mass deposition (in μg cm-2) of films was calculated with the analysis software STRATAGem via k-values measured with EDS. The average density of coated films was obtained from the mass deposition and the film thickness as measured by the cross-section SEM. The porosity was calculated by dividing the average film density by the bulk (theoretical) density of the film material. Film porosities were counterchecked by spectroscopic ellipsometry (SE) using the Bruggeman effective medium approximation (BEMA). The results obtained by both analytical approaches/methods used, SEM/EDS/STRATAGem and SE were in good agreement. T2 - Microscopy & Microanalysis 2018 CY - Baltimore, MD, USA DA - 05.08.2018 KW - Electron probe microanalysis (EPMA) KW - Iridium oxide KW - Porous thin films KW - Spectroscopic ellipsometry PY - 2018 AN - OPUS4-46509 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Juds, Carmen A1 - Schmidt, J. A1 - Weller, Michael G. A1 - Lange, Thorid A1 - Beck, Uwe A1 - Conrad, T. A1 - Boerner, H. G. T1 - Combining phage display and next-generation sequencing for materials sciences: A case study on probing polypropylene surfaces N2 - Phage display biopanning with Illumina next-generation sequencing (NGS) is applied to reveal insights into peptide-based adhesion domains for polypropylene (PP). One biopanning round followed by NGS selects robust PP-binding peptides that are not evident by Sanger sequencing. NGS provides a significant statistical base that enables motif analysis, statistics on positional residue depletion/enrichment, and data analysis to suppress false-positive sequences from amplification bias. The selected sequences are employed as water-based primers for PP-metal adhesion to condition PP surfaces and increase adhesive strength by 100% relative to nonprimed PP. KW - Polymers KW - Polypropylene KW - Glue KW - Plastics KW - Surface Activation KW - Primer KW - Peptide Library KW - Epoxy KW - Solid-binding Peptides KW - Functionalization KW - Polymer-binding Peptides KW - Adhesion KW - Material-binding Peptides KW - Adhesives PY - 2020 DO - https://doi.org/10.1021/jacs.0c03482 SN - 0002-7863 SN - 1520-5126 VL - 142 IS - 24 SP - 10624 EP - 10628 PB - ACS CY - Washington, DC, USA AN - OPUS4-51123 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Arinchtein, A. A1 - Schnack, R. A1 - Kraffert, K. A1 - Radnik, Jörg A1 - Dietrich, P. A1 - Sachse, René A1 - Krähnert, R. T1 - Role of Water in Phase Transformations and Crystallization of Ferrihydrite and Hematite N2 - The oxides, hydroxides, and oxo-hydroxides of iron belong to the most abundant materials on earth. They also feature a wide range of practical applications. In many environments, they can undergo facile phase transformations and crystallization processes. Water appears to play a critical role in many of these processes. Despite numerous attempts, the role of water has not been fully revealed yet. We present a new approach to study the influence of water in the crystallization and phase transformations of iron oxides. The approach employs model-type iron oxide films that comprise a defined homogeneous nanostructure. The films are exposed to air containing different amounts of water reaching up to pressures of 10 bar. Ex situ analysis via scanning electron microscopy, Transmission electron microscopy, selected area electron diffraction, and X-ray diffraction is combined with operando near-ambient pressure X-ray photoelectron spectroscopy to follow water-induced changes in hematite nd ferrihydrite. Water proves to be critical for the nucleation of ematite domains in ferrihydrite, the resulting crystallite orientation, and the underlying crystallization mechanism. KW - Iron oxide KW - Ferrihydrite KW - Hematite KW - Water KW - NAP-XPS KW - High pressure PY - 2020 DO - https://doi.org/10.1021/acsami.0c05253 VL - 12 SP - 38714 EP - 38722 PB - ACS Publication AN - OPUS4-51201 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Florian, Camilo A1 - Fischer, Daniel A1 - Freiberg, K. A1 - Duwe, M. A1 - Sahre, Mario A1 - Schneider, S. A1 - Hertwig, Andreas A1 - Krüger, Jörg A1 - Rettenmayr, M. A1 - Beck, Uwe A1 - Undisz, A. A1 - Bonse, Jörn T1 - Silicon surface amorphization and re-crystallization via single femtosecond laser pulses N2 - Silicon is the material responsible for most of the technological developments during the past century, making it one of the most studied materials along different disciplines. However, there are still unturned stones regarding its superficial re-solidification after femtosecond laser-induced local melting. In this presentation, we report irradiation experiments with single femtosecond pulses (790 nm, 30 fs) with a spatially Gaussian distribution on two different types of silicon with orientations <111> and <100>. The surface modifications were studied in detail via different techniques, including optical microscopy, atomic force microscopy, spectroscopic imaging ellipsometry, energy dispersive X-ray spectroscopy and high-resolution transmission electron microscopy. We quantitatively estimate the resulting radial amorphous layer depth profiles with maximum thicknesses around some tenths of nanometers for fluences in between the melting and ablation thresholds. In particular, spectroscopic imaging ellipsometry (SIE) allowed fast data acquisition using multiple wavelengths to provide experimental measurements for calculating the nanometric radial amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. SIE proved to be capable of detecting and measuring nanometric structural and chemical modifications (oxidation) on the studied laser spots. The accuracy of the SIE-based calculations is verified experimentally by characterizing an in-depth material lamella via high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). For completeness, we present a mathematical modelling for the melt layer thickness considering different optical absorption processes including one photon absorption, two photon absorption and free-carrier absorption, highlighting the relevance of the latter one in the femtosecond laser-induced melting of silicon. T2 - 28th International Conference on Advanced Laser Technologies (ALT'21) CY - Online meeting DA - 06.09.2021 KW - Silicon KW - Femtosecond laser KW - Phase transitions KW - Spectroscopic imaging ellipsometry KW - Transmission electron microscopy PY - 2021 AN - OPUS4-53235 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Duwe, M. A1 - Florian, C. A1 - Fischer, Daniel A1 - Freiberg, K. A1 - Sahre, Mario A1 - Schneider, S. A1 - Hertwig, Andreas A1 - Krüger, Jörg A1 - Rettenmayr, M. A1 - Beck, Uwe A1 - Undisz, A. A1 - Bonse, Jörn T1 - Thickness Profiling of the Superficial Amorphization and Re-Crystallization of Silicon Induced by Femtosecond Laser Pulses N2 - Crystalline Silicon undergoes a complex phase-change dynamic of melting, amorphization, ablation and re-crystallization upon irradiation with high intensity ultra-short laser pulses [1]. The final state of such a modified surface spot depends on many factors, most notably the local fluence and the surface’s crystal orientation. In this study, we induced superficial structure and phase changes in Silicon <111> and <100> wafers using single femtosecond laser pulses (790 nm, 30 fs) for a range of different peak fluences. The resulting surface modifications were studied in great detail using a number of different techniques, including spectroscopic imaging ellipsometry (SIE), atomic force microscopy, high-resolution transmission electron microscopy (HRTEM), and energy dispersive X-ray spectroscopy within scanning transmission electron microscopy (STEM-EDX). Playing a pivotal role in this work, SIE provided non-destructive measurements for the calculation of the radial amorphous layer-thickness profiles of the irradiated spots using a two-layer thin-film model (Silicon dioxide and amorphous Silicon on a crystalline Silicon substrate). The measurements further allowed for the analysis of the oxide-layer modifications induced by the laser treatment. The results of the SIE-calculations were cross-checked by an in-depth material lamella via HRTEM and STEM-EDX. T2 - 11th Workshop Ellipsometry (WSE 11) CY - Steyr, Austria DA - 06.09.2021 KW - Femtosecond Laser KW - Spectroscopic imaging ellipsometry KW - Amorphization KW - Ablation KW - Re-crystallization PY - 2021 AN - OPUS4-53363 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -