TY - JOUR A1 - Procop, Mathias A1 - Hodoroaba, Vasile-Dan T1 - Uncertainties in secondary fluorescence correction in EPMA JF - Microscopy and Microanalysis N2 - Secondary fluorescence is an inevitable effect that has to be taken into account in any algorithm for quantitative electron probe microanalysis (EPMA) as an additional correction. Moreover, secondary fluorescence worsens spatial resolution of EPMA. Secondary fluorescence is excited both by characteristic radiation and by the X-ray continuum. In most cases the correction is small. There are, however, cases, e.g. the determination of low heavy metal concentration in a light matrix, where the contribution of secondary fluorescence exceeds 10% of the measured X-ray line intensity. For secondary fluorescence correction the measured X-ray line intensity has to be divided by the correction factor (1+I_flchar/I_p +I_flcont/I_p )≈(1+I_flchar/I_p )(1+I_flcont/I_p ) in order to get those intensity I_p, which is excited only by the primary electrons. I_flchar and I_flcont mean the calculated characteristic and continuums fluorescence intensities. In order to get the intensity of fluorescence radiation, the absorption of the exciting radiation in the specimen, the photoionization probability and the self-absorption of the emitted line must be calculated. The critical quantity is the X-ray yield of the exciting atoms in case of fluorescence by characteristic radiation and the bremsstrahlung yield of the specimen in case of continuum fluorescence. In the former case it is reasonable to apply the same physical model to calculate I_flchar and I_p. KW - EPMA KW - Secondary fluorescence correction KW - Uncertainties KW - Microanalysis PY - 2019 UR - https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/uncertainties-in-secondary-fluorescence-correction-in-epma/AA92E973D350A74C574067AAFB2D9044 DO - https://doi.org/10.1017/S1431927619012534 SN - 1431-9276 SN - 1435-8115 VL - 25 IS - Suppl. 2 SP - 2360 EP - 2361 PB - Cambridge University Press AN - OPUS4-48863 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Terborg, R. A1 - Boehm, S. A1 - Kim, K. J. T1 - Analysis of Elemental Composition of Fe1-xNix and Si1-xGex Alloy Thin Films by EPMA and μ-XRF JF - Microscopy and Microanalysis N2 - The present study reports on measurements on thin Fe-Ni films on silicon and first-time results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide Substrate by electron probe microanalysis (EPMA). Standard-based and standardless EPMA (with EDS) results were used in combination with the thin film analysis software Stratagem for the quantification. Further, X-ray fluorescence analysis (XRF) can be used for the determination of elemental composition and thickness of such films as well. In this case, XRF with a μ-focus X-ray source (μ-XRF) attached to a SEM was applied. For quantification, a fundamental parameter (FP) approach has been used to calculate standard-based and standardless results. Both thin film systems have been chosen as samples of an international round robin test (RRT) organised in the frame of standardisation technical committee ISO/TC 201 ‘Surface chemical analysis’, under the lead of KRISS. The main objective of the RRT is to compare the results of atomic fractions of Fe1-xNix and Si1-xGex alloy films obtained by different surface Analysis techniques, such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS) applied in the depth-profiling operation mode. Five samples of different atomic fractions of each thin film system, i.e., Fe1-xNix and Si1-xGex, have been grown by ion beam sputter deposition on silicon and Al2O3 wafers, respectively. Reference FeNi and SiGe films with well-known elemental composition and thickness have been also supplied for standard-based analysis. An excellent agreement has been obtained between the atomic fractions determined by EPMA and µ-XRF with the KRISS certified values.zeige mehr KW - Thin film analysis KW - EPMA KW - XRF KW - Fe-Ni KW - Si-Ge PY - 2019 DO - https://doi.org/10.1017/S1431927619009668 VL - 25 SP - 1786 EP - 1787 PB - Cambridge University Press AN - OPUS4-49245 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -