TY - JOUR A1 - Thiede, Tobias A1 - Cabeza, S. A1 - Mishurova, Tatiana A1 - Nadammal, N. A1 - Kromm, Arne A1 - Bode, Johannes A1 - Haberland, C. A1 - Bruno, Giovanni T1 - Residual stress in selective laser melted Inconel 718: Influence of the removal from base plate and deposition hatch length N2 - The residual stress distribution in IN718 elongated prisms produced by Selective Laser Melting was studied by means of neutron (bulk) and laboratory X-ray (surface) diffraction. Two deposition hatch lengths were considered. A horizontal plane near the top surface (perpendicular to the building direction) and a vertical plane near the lateral surface (parallel to the building direction) were investigated. Samples both in as-built (AB) condition and removed (RE) from the base plate were characterized. While surface stress fields seem constant for AB condition, X-ray diffraction shows stress gradients along the hatch direction in the RE condition. The stress profiles correlate with the distortion maps obtained by tactile probe measurements. Neutron diffraction shows bulk stress gradients for all principal components along the main sample directions. We correlate the observed stress patterns with the hatch length, i.e. with its effect on temperature gradients and heat flow. The bulk stress gradients partially disappear after removal from the baseplate. KW - Residual stress KW - Additive manufacturing KW - Neutron diffraction KW - Selective laser melting KW - Laboratory X-ray diffraction KW - Coordinate measurement machine KW - IN718 PY - 2018 U6 - https://doi.org/10.1520/MPC20170119 SN - 2379-1365 VL - 7 IS - 4 SP - 717 EP - 735 PB - ASTM International CY - USA, West Conshohocken AN - OPUS4-46673 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Marquardt, J. A1 - Gurieva, G. A1 - Stephan-Scherb, Christiane A1 - Schorr, S. T1 - The Effect of Copper Vacancies on the Anion Position of Chalcopyrite Type CuGaS2 N2 - The prediction of structural parameters and optoelectronic properties of compound semiconductors is very important. However, calculations often neglect chemical variability and structural defects. In chalcopyrite type semiconductors one of the major defects are copper vacancies (V Cu). The four cation neighbors of the anion determine its position in the chalcopyrite type structure expressed by the Wyckoff position 8d (x, 1/4, 1/8). Intrinsic point defects like V Cu and anti-sites may cause variations of the Anion position in the middle of the cation tetrahedron, especially in the Anion position Parameter x. For stoichiometric chalcopyrite type compounds a formalism according to the principle of conservation of tetrahedral bonds (CTB) can be applied to calculate the anion position parameter, but it fails in the case of off-stoichiometric chalcopyrites. This case study of chalcopyrite type CuGaS 2 and Mn-substituted GuGaS 2 shows that the experimentally determined anion position Parameter x deviate from values calculated by CTB approach. The systematic investigation of off-stoichiometric CuGaS 2 and Mn-substituted GuGaS 2 demonstrates the effect of copper vacancies on the average radii of the cation sites (Wyckoff positions 4a and 4b) as well as on the anion position Parameter x. By applying an elaborated CTB Approach implementing copper vacancies an agreement between experimental and calculated anion position Parameter x can be obtained. KW - Chalcogenides KW - Neutron diffraction KW - Copper vacancies PY - 2019 U6 - https://doi.org/10.1002/pssa.201800882 VL - 216 IS - 15 SP - 1800882 PB - Wiley AN - OPUS4-47748 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -