TY - GEN A1 - Winkelmann, A. A1 - Britton, T. B. A1 - Nolze, Gert T1 - EBSD Kikuchi Pattern Analysis, Silicon 15kV N2 - Supplementary data and images for Si EBSD pattern analysis as presented in: A. Winkelmann, T.B. Britton, G. Nolze "Constraints on the effective electron energy spectrum in backscatter Kikuchi diffraction", Physical Review B (2019). KW - EBSD KW - Electron energy KW - Energy distribution KW - Kikuchi pattern KW - Simulation PY - 2019 DO - https://doi.org/10.5281/zenodo.2565061 PB - Zenodo CY - Geneva AN - OPUS4-51907 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Nolze, Gert A1 - Han, M. A1 - Chen, C. A1 - Zhao, G. A1 - Li, L. A1 - Yo, B. A1 - Huang, X. A1 - Zhu, Y. T1 - Blind lattice-parameter determination of cubic and tetragonal phases with high accuracy using a single EBSD pattern JF - Acta Crystallographia N2 - The Bravais lattices and their lattice parameters are blindly determined using electron backscatter diffraction (EBSD) patterns of materials with cubic or tetragonal crystal structures. Since the geometric relationships in a single EBSD pattern are overdetermined, the relative errors of determining the lattice parameters as well as the axial ratios are confined to about 0.7 ± 0.4% and 0.07 ± 0.03%, respectively, for ideal simulated EBSD patterns. The accuracy of the crystal orientation determination reaches about 0.06 ± 0.03°. With careful manual band detection, the accuracy of determining lattice parameters from experimental patterns can be as good as from simulated patterns, although the results from simulated patterns are often better than expermental patterns, which are lower quality and contain uncertain systematic errors. The reasonably high accuracy is obtained primarily because the detection of the diffracting-plane traces and zone axes is relatively accurate. The results here demonstrate that the developed procedure based on the EBSD technique presents a reliable tool for crystallographic characterization of the Bravais lattices of unknown phases. KW - EBSD KW - Bravais lattice KW - Lattice parameters KW - Kikuchi pattern PY - 2018 DO - https://doi.org/10.1107/S2053273318010963 SN - 2053-2733 VL - 74 IS - 6 SP - 630 EP - 639 PB - International Union of Crystallography AN - OPUS4-46455 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Nolze, Gert A1 - Winkelmann, A. A1 - Britton, T. B. T1 - Constraints on the effective electron energy spectrum in backscatter Kikuchi diffraction JF - Physical review B N2 - Electron backscatter diffraction (EBSD) is a technique to obtain microcrystallographic information from materials by collecting large-angle Kikuchi patterns in the scanning electron microscope (SEM). An important fundamental question concerns the scattering-angle dependent electron energy distribution, which is relevant for the formation of the Kikuchi diffraction patterns. Here we review the existing experimental data and explore the effective energy spectrum that is operative in the generation of backscatter Kikuchi patterns from silicon. We use a full pattern comparison of experimental data with dynamical electron diffraction simulations. Our energy-dependent cross-correlation based pattern matching approach establishes improved constraints on the effective Kikuchi pattern energy spectrum, which is relevant for high-resolution EBSD pattern simulations and their applications. KW - EBSD KW - Kikuchi pattern KW - Simulation KW - Energy distribution KW - Electron energy PY - 2019 SN - 2469-9950 SN - 2469-9969 VL - 99 IS - 6 SP - 064115-1 EP - 064115-13 PB - AIP AN - OPUS4-47635 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -