TY - GEN A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Österle, Werner A1 - Kaiander, I. A1 - Sellin, R. L. A1 - Bimberg, D. ED - Wilkening, G. ED - Koenders, L. T1 - Testing the Lateral Resolution in the Nanometre Range with a New Type of Certified Reference Material T2 - NanoScale 2004 Seminar ; 6th Seminar on Quantitative Microscopy ; 2nd Seminar on Nanoscale Calibration Standards and Methods CY - Braunschweig, Germany DA - 2004-03-25 KW - Laterale Auflösung KW - Nanometrologie KW - Nanotechnologie KW - Oberflächenanalytik KW - Zertifiziertes Referenzmaterial PY - 2004 SN - 3-527-40502-X DO - https://doi.org/10.1002/3527606661.ch21 SP - 282 EP - 294 PB - Wiley-VCH CY - Weinheim AN - OPUS4-7541 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Oran, Umut A1 - Ünveren, Ercan A1 - Wirth, Thomas A1 - Unger, Wolfgang T1 - Poly-dimethyl-siloxane (PDMS) contamination of polystyrene (PS) oligomers samples: a comparison of time-of-flight static secondary ion mass spectrometry (TOF-SSIMS) and X-ray photoelectron spectroscopy (XPS) results N2 - Pure and PDMS contaminated PS oligomers films were investigated both by time-of-flight static secondary ion mass spectrometry (TOF-SSIMS) and X-ray photoelectron spectroscopy (XPS). The secondary ion spectra from the PDMS contaminated PS oligomers were almost completely related to PDMS. XPS revealed a PDMS contamination characterized by a silicon surface concentration of 6 at.%. Obviously siloxane contaminants existing on the surface of a silicon wafer may diffuse towards the PS oligomers outermost surface resulting in a rather high PDMS surface concentration of about 85%. Due to the known differences in the information depth and sensitivity of SSIMS and XPS very different detection limits are to be considered. In elimination of siloxane contaminants by ultrasonication in hexane was found to be an effective way. Another common organic cleaning procedure, which is ultrasonication in trichloroethylene (TCE), subsequently in isopropanol and finally in acetone was found to be ineffective for cleaning of PDMS contaminated silicon wafers. KW - PDMS KW - TOF-SIMS KW - Polystyrene KW - Segregation PY - 2004 DO - https://doi.org/10.1016/j.apsusc.2003.12.008 SN - 0169-4332 SN - 1873-5584 VL - 227 SP - 318 EP - 324 PB - North-Holland CY - Amsterdam AN - OPUS4-3479 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang T1 - Teststreifen für den Nanokosmos KW - Laterale Auflösung KW - Nanometrologie KW - Nanotechnologie KW - Oberflächenanalytik KW - Zertifiziertes Referenzmaterial PY - 2004 UR - http://www.laborpraxis.de/ SN - 0344-1733 SN - 1610-8256 VL - 27 IS - Juli/Aug SP - 30 EP - 32, Sonderh. Nanotechnologie PB - Vogel CY - Würzburg AN - OPUS4-3808 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Kuhmann, J. A1 - Harde, P. A1 - Pech, O. A1 - Pittroff, W. A1 - Preuß, A. A1 - Adolphi, B. A1 - Wirth, Thomas A1 - Österle, Werner ED - Reichl, H. T1 - Fluxless flip-chip bonding for the photonic assembly - comparison between evaporated SnPb (60/40) and AuSn (80/20) solder T2 - 5th International Conference on Micro-Electro-, -Opto-, -Mechanical Systems and Components CY - Potsdam, Germany DA - 1996-09-17 PY - 1996 SN - 3-8007-2200-3 VL - 5 SP - 91 EP - 97 PB - VDE-Verl. CY - Berlin AN - OPUS4-2544 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Escher, M. A1 - Weber, N. A1 - Funnenmann, D. A1 - Krömker, B. T1 - Testing of Lateral Resolution in the Nanometre Range Using the BAM-L002 - Certified Reference Material: Application to ToF-SIMS IV and NanoESCA Instruments T2 - International Symposium on Practical Surface Analysis CY - Jeju, Republic of Corea DA - 2004-10-04 KW - ESCA KW - Nanometrologie KW - Nanotechnologie KW - Oberflächenanalytik KW - SIMS KW - XPS KW - Zertifiziertes Referenzmaterial PY - 2005 SN - 1341-1756 SN - 1347-8400 VL - 12 IS - 2 SP - 78 EP - 82 CY - Tsukuba AN - OPUS4-11146 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - Surface analysis of dental enamel by TOF-SIMS, SEM and TEM T2 - SIMS EUROPE 2006 CY - Münster, Germany DA - 2006-09-24 PY - 2006 AN - OPUS4-13190 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - TOF-SIMS investigation of coated glass beads T2 - 18th International Conference on Secondary Ion Mass Spectrometry CY - Riva del Garda, Italy DA - 2011-09-18 PY - 2011 AN - OPUS4-24240 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Moritz, W. A1 - Werner, R. A1 - Tausche, A. A1 - Cherkaschinin, G. A1 - Molajew, R. A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Linke, S. T1 - Alloys for gas sensors investigated using the continuous gradient-high throughput screening macroscope CG-HTSM N2 - Ternary alloys have been studied as the gate metal of chemical sensors based on the field effect in silicon. The investigation of reduced poisoning of hydrogen sensors by H2S is presented in the alloy system PdxNiyCo1-x-y. A new method in high throughput screening of alloys is applied. Not singular sample compositions but a continuous gradient in alloy concentrations was produced on a semiconductor sample. A laser scanning system produces a photo current in the semiconductor to map the sensor signal and provide a quasi continuous alloy characterization. The new system is therefore called Continuous Gradient—High Throughput Screening Macroscope (CG-HTSM). Typically 625 alloys are characterized in 15 minutes. The resolution of our set-up allows distinguishing 100.000 alloy compositions. KW - Alloy KW - Sensor KW - High throughput screening KW - Macroscope PY - 2011 DO - https://doi.org/10.1166/sl.2011.1586 SN - 1546-198X SN - 1546-1971 VL - 9 IS - 2 SP - 662 EP - 664 PB - American Scientific Publishers (ASP) CY - Stevenson Ranch, CA, USA AN - OPUS4-24504 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Abou-Ras, D. A1 - Caballero, R. A1 - Fischer, C.-H. A1 - Kaufmann, C.A. A1 - Lauermann, I. A1 - Mainz, R. A1 - Mönig, H. A1 - Schöpke, A. A1 - Stephan, C. A1 - Streeck, C. A1 - Schorr, S. A1 - Eicke, A. A1 - Döbeli, M. A1 - Gade, B. A1 - Hinrichs, J. A1 - Nunney, T. A1 - Dijkstra, H. A1 - Hoffmann, V. A1 - Klemm, D. A1 - Efimova, V. A1 - Bergmaier, A. A1 - Dollinger, G. A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Rockett, A.A. A1 - Perez-Rodriguez, A. A1 - Alvarez-Garcia, J. A1 - Izquierdo-Roca, V. A1 - Schmid, T. A1 - Choi, P.-P. A1 - Müller, M. A1 - Bertram, F. A1 - Christen, J. A1 - Khatri, H. A1 - Collins, R.W. A1 - Marsillac, S. A1 - Kötschau, I. T1 - Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films N2 - The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 µm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limits. KW - Elemental distributions KW - Comparison KW - Depth profiling KW - Chemical mapping KW - Thin films KW - Solar cells KW - Chalcopyrite-type KW - Cu(In,Ga)Se2 PY - 2011 DO - https://doi.org/10.1017/S1431927611000523 SN - 1431-9276 SN - 1435-8115 VL - 17 IS - 5 SP - 728 EP - 751 PB - Cambridge University Press CY - New York, NY AN - OPUS4-24506 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Reiners, Georg A1 - Wirth, Thomas A1 - Hoffmann, V. A1 - Präßler, F. T1 - Multilayer reference coatings for depth profile standards N2 - Depth profiles of layer systems consisting of different film materials and having different thicknesses are of great practical importance. Multilayer reference coatings of conducting (Ti/Al) and non-conducting (SiO2/Si3N4) material are analyzed with Auger electron spectroscopy (AES) and glow discharge optical emission spectroscopy (GDOES) depth profiling. Deposition techniques, physical vapor deposition for Ti/Al layers and plasma-enhanced chemical vapor deposition for SiO2/Si3N4 layers, as well as measurement and testing procedures for the determination of layer thickness such as optical and mechanical stylus and spectroscopie ellipsometry are discussed. GDOES depth profiles in direct current (d.c.) and radio frequency (r.f.) mode are related to measurements of crater profiles and compared with line scans and depth profiles performed by AES. It is shown that such multilayer reference systems are appropriate for calibration of depth profiles, i.e. the definition and the evaluation of the depth resolution at the interface, the determination of sputter rates both for d.c.- and r.f.-GDOES and AES, the optimization of the conditions of analysis, and the quantification of analysis itself. KW - Depth profiling KW - Multilayers KW - Glow discharge KW - Auger electron spectroscopy PY - 1996 DO - https://doi.org/10.1016/S0040-6090(96)09083-9 SN - 0040-6090 VL - 290-291 SP - 57 EP - 62 PB - Elsevier CY - Amsterdam AN - OPUS4-25436 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Almagro, J.-F. A1 - Busch, P. A1 - Gohil, D. D. A1 - Heikinheimo, E. A1 - Karduck, P. A1 - Richter, S. A1 - Sloof, W. G. A1 - Thiot, J.-F. A1 - Wirth, Thomas T1 - Electron-Probe MICROanalysis of LighT Elements - Measurement Methods and Certified Reference Materials (MICROLITE) PY - 2002 IS - 65 SP - 1 EP - 156 PB - National Physical Laboratory CY - Teddington, Middlesex AN - OPUS4-1911 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -