TY - JOUR A1 - Kraffert, K. A1 - Karg, M. A1 - Schmack, R. A1 - Clavel, G. A1 - Boissiere, C. A1 - Wirth,, Thomas A1 - Pinna, N. A1 - Kraehnert, R. T1 - Stabilization of Mesoporous Iron Oxide Films against Sintering and Phase Transformations via Atomic Layer Deposition of Alumina and Silica N2 - The stabilization of crystal phases and nanostructured morphologies is an essential topic in application-driven design of mesoporous materials. Many applications, e.g. catalysis, require high temperature and humidity. Typical metal oxides transform under such conditions from a metastable, low crystal-line material into a thermodynamically more favorable form, i.e. from ferrihy-drite into hematite in the case of iron oxide. The harsh conditions induce also a growth of the crystallites constituting pore walls, which results in sintering and finally collapse of the porous network. Herein, a new method to stabi-lize mesoporous templated metal oxides against sintering and pore collapse is reported. The method employs atomic layer deposition (ALD) to coat the internal mesopore surface with thin layers of either alumina or silica. The authors demonstrate that silica exerts a very strong influence: It shifts hematite formation from 400 to 600 °C and sintering of hematite from 600 to 900 °C. Differences between the stabilization via alumina and silica are rationalized by a different interaction strength between the ALD material and the ferrihydrite film. The presented approach allows to stabilize mesoporous thin films that require a high crystallization temperature, with submonolayer quantity of an ALD material, and to apply mesoporous materials for high temperature applications. KW - Mesoporous oxides KW - Atomic layer deposition KW - Stabilization PY - 2018 DO - https://doi.org/10.1002/admi.201800360 VL - 5 IS - 14 SP - 1800360-1 EP - 1800360-9 PB - Wiley-VCH AN - OPUS4-47869 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - Investigation of Silica Nanoparticles by Auger Electron Spectroscopy (AES) T2 - PHI European User Meeting 2014 CY - Ismaning, Germany DA - 2014-05-14 PY - 2014 AN - OPUS4-32947 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Graf, Nora A1 - Yegen, E. A1 - Lippitz, Andreas A1 - Treu, Dieter A1 - Wirth, Thomas A1 - Unger, Wolfgang T1 - Optimization of cleaning and aminosilanization protocols for Si wafers to be used as platforms for biochip microarrays by surface analysis (XPS, ToF-SIMS and NEXAFS spectroscopy) N2 - It is known that aminosilanized Si wafers may be used as microarray platforms. Results of an XPS study of a cleaning applied to Si wafers prior to aminosilanization are presented and discussed. Furthermore, the results of an aminosilanization protocol optimized in terms of nitrogen chemistry are described. After optimization of the protocol a free amine content of 94% was reached. The surface chemistry was investigated in this study by using XPS, time of flight (ToF)-SIMS and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Reference to aminosilanization protocols reported in the literature has been made. KW - Aminosilanization KW - Si wafers KW - Microarray KW - XPS KW - ToF-SIMS KW - NEXAFS PY - 2008 DO - https://doi.org/10.1002/sia.2621 SN - 0142-2421 SN - 1096-9918 VL - 40 IS - 3-4 SP - 180 EP - 183 PB - Wiley CY - Chichester AN - OPUS4-17192 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang T1 - Imaging surface analysis: Lateral resolution and its relation to contrast and noise N2 - Lateral resolution, also called image resolution, is the most relevant quality parameter of maps and line scans. Therefore well defined procedures for the determination of lateral resolution are required. In the surface analysis community different definitions of lateral resolution are in use and there is no generally accepted method for the determination of lateral resolution which meets the demands of the state-of-the-art in surface analysis. We propose the determination of lateral resolution by imaging of well defined square-wave gratings with finely graded periods. This method enables the real time estimation of lateral resolution and the adjustment of instrument settings with respect to lateral resolution. The effect of noise and contrast on lateral resolution has been analysed by numerically simulated images of square-wave gratings. A new resolution criterion has been developed which is based on the dip-to-noise ratio and takes into account the sampling step width by introducing a "reduced noise". The contrast transfer function has been introduced and its relation to lateral resolution in the presence of noise was analysed. For that reason an "effective cut-off frequency" was defined which is the reciprocal of the lateral resolution. Normalized values of lateral resolution and their relation to signal-to-noise ratio and sampling step width were given for Gaussian and Lorentzian line spread functions. These values enable the calculation of experimental parameters which are necessary to get a required value of lateral resolution. Finally the successful application of the proposed approach to determine lateral resolution has been demonstrated by ToF-SIMS element mapping of the certified reference material BAM-L200. KW - Auflösungskriterium KW - BAM-L200 KW - Effektive cut-off Funktion KW - Laterale Auflösung KW - Kontrast KW - Kontrasttransferfunktion KW - Linienverwaschungsfunktion KW - Rauschen PY - 2010 DO - https://doi.org/10.1039/c004323k SN - 0267-9477 SN - 1364-5544 VL - 25 SP - 1440 EP - 1452 PB - Royal Society of Chemistry CY - London AN - OPUS4-21875 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Österle, Werner A1 - Kaiander, I. A1 - Sellin, R.L. A1 - Bimberg, D. T1 - BAM-L002 - A new type of certified reference material for length calibration and testing of lateral resolution in the nanometre range N2 - A new type of test sample for the determination of lateral resolution in surface analysis is presented. The certified reference material BAM-L002 Nanoscale strip pattern for length calibration and testing of lateral resolution is an embedded cross-section of epitaxially grown layers of AlxGa1-xAs and InxGa1-xAs on GaAs substrate. The surface of the sample provides a flat pattern with strip widths of 0.4-500 nm. The combination of gratings, isolated narrow strips and sharp edges of wide strips offers improved possibilities for the calibration of a length scale, the determination of lateral resolution and the optimization of instrument settings. The feasibility of the reference material for an analysis of lateral resolution is demonstrated for SIMS. PY - 2004 DO - https://doi.org/10.1002/sia.1936 SN - 0142-2421 SN - 1096-9918 VL - 36 SP - 1423 EP - 1426 PB - Wiley CY - Chichester AN - OPUS4-4696 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - Development of GD-OES standard measurement procedures by using PVD and other referencecoating samples T2 - Expert-Meeting "Depth Profiling", EU Network "Analytical GDS" CY - Dresden, Germany DA - 1999-10-13 PY - 1999 AN - OPUS4-6055 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - Standard-Messverfahren, Referenzmaterialien für die GD-OES, Aktivitäten der BAM T2 - 7. Deutsches Anwendertreffen "Analytische GDS" CY - Dresden, Germany DA - 2000-10-17 PY - 2000 AN - OPUS4-6122 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - Development of reference materials for GD-OES, SNMS, AES and Electron Beam Microanalysis: First results of the VAMAS project, the EC project "MICROLITE" and new EC - "Expression of needs" T2 - EC Network "Analytical GDS": Expert meetings "reference materials for non-conducting and layered samples", Standard procedures; European standards CY - Berlin, Germany DA - 2000-05-03 PY - 2000 AN - OPUS4-6095 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - Electron-probe MICROanalysis of LIghT Elements; Measurement Methods and Certified Reference Materials (MICROLITE) - Minutes of Progress Meeting: WP1.2 Production of carbide and nitride standards and WP1.4 Stability testing T2 - MICROLITE 7th Progress Meeting, EKO Stahl CY - Eisenhüttenstadt, Germany DA - 2001-10-17 PY - 2001 AN - OPUS4-6901 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - Electron-probe MICROanalysis of LIghT Elements; Measurement Methods and Certified Reference Materials (MICROLITE) - Minutes of Progress Meeting: WP1.2 Production of carbide and nitride standards and WP1.4 Stability testing T2 - MICROLITE 6th Progress Meeting CY - Palmones, Spain DA - 2001-03-16 PY - 2001 AN - OPUS4-6902 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hantsche, Harald A1 - Golze, Manfred A1 - Zabinski, A. A1 - Eckardt, Jürgen A1 - Wirth, Thomas A1 - Schmidt, Dieter T1 - Auger microprobe-surface analysis of sub-mum nitrides and carbonitrides in steel PY - 1993 SN - 0937-0633 VL - 346 SP - 29 EP - 36 PB - Springer CY - Berlin AN - OPUS4-6903 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang T1 - A reference material for calibration and testing of instruments with nanometric lateral resolution T2 - SIMS Europe 2002 ; 3rd European Workshop on Secondary Ion Mass Spectrometry CY - Münster, Germany DA - 2002-09-15 PY - 2002 SP - 58 AN - OPUS4-6841 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Almagro, J.-F. A1 - Busch, P. A1 - Gohil, D. D. A1 - Saunders, S. R. J. A1 - Sloof, W. G. A1 - Thiot, J.-F. A1 - Schneider, H. A1 - Whitwood, M. A1 - Wirth, Thomas T1 - Electron-Probe MICROanalysis of LighT Elements - Measurement Methods and Certified Reference Materials (MICROLITE) PY - 2000 IS - 266 SP - 1 EP - 35 PB - National Physical Laboratory CY - Teddington, Middlesex AN - OPUS4-6843 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Österle, Werner A1 - Kaiander, I. A1 - Sellin, R. L. A1 - Bimberg, D. ED - Wilkening, G. ED - Koenders, L. T1 - Testing the Lateral Resolution in the Nanometre Range with a New Type of Certified Reference Material T2 - NanoScale 2004 Seminar ; 6th Seminar on Quantitative Microscopy ; 2nd Seminar on Nanoscale Calibration Standards and Methods CY - Braunschweig, Germany DA - 2004-03-25 KW - Laterale Auflösung KW - Nanometrologie KW - Nanotechnologie KW - Oberflächenanalytik KW - Zertifiziertes Referenzmaterial PY - 2004 SN - 3-527-40502-X DO - https://doi.org/10.1002/3527606661.ch21 SP - 282 EP - 294 PB - Wiley-VCH CY - Weinheim AN - OPUS4-7541 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Oran, Umut A1 - Ünveren, Ercan A1 - Wirth, Thomas A1 - Unger, Wolfgang T1 - Poly-dimethyl-siloxane (PDMS) contamination of polystyrene (PS) oligomers samples: a comparison of time-of-flight static secondary ion mass spectrometry (TOF-SSIMS) and X-ray photoelectron spectroscopy (XPS) results N2 - Pure and PDMS contaminated PS oligomers films were investigated both by time-of-flight static secondary ion mass spectrometry (TOF-SSIMS) and X-ray photoelectron spectroscopy (XPS). The secondary ion spectra from the PDMS contaminated PS oligomers were almost completely related to PDMS. XPS revealed a PDMS contamination characterized by a silicon surface concentration of 6 at.%. Obviously siloxane contaminants existing on the surface of a silicon wafer may diffuse towards the PS oligomers outermost surface resulting in a rather high PDMS surface concentration of about 85%. Due to the known differences in the information depth and sensitivity of SSIMS and XPS very different detection limits are to be considered. In elimination of siloxane contaminants by ultrasonication in hexane was found to be an effective way. Another common organic cleaning procedure, which is ultrasonication in trichloroethylene (TCE), subsequently in isopropanol and finally in acetone was found to be ineffective for cleaning of PDMS contaminated silicon wafers. KW - PDMS KW - TOF-SIMS KW - Polystyrene KW - Segregation PY - 2004 DO - https://doi.org/10.1016/j.apsusc.2003.12.008 SN - 0169-4332 SN - 1873-5584 VL - 227 SP - 318 EP - 324 PB - North-Holland CY - Amsterdam AN - OPUS4-3479 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang T1 - Teststreifen für den Nanokosmos KW - Laterale Auflösung KW - Nanometrologie KW - Nanotechnologie KW - Oberflächenanalytik KW - Zertifiziertes Referenzmaterial PY - 2004 UR - http://www.laborpraxis.de/ SN - 0344-1733 SN - 1610-8256 VL - 27 IS - Juli/Aug SP - 30 EP - 32, Sonderh. Nanotechnologie PB - Vogel CY - Würzburg AN - OPUS4-3808 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Kuhmann, J. A1 - Harde, P. A1 - Pech, O. A1 - Pittroff, W. A1 - Preuß, A. A1 - Adolphi, B. A1 - Wirth, Thomas A1 - Österle, Werner ED - Reichl, H. T1 - Fluxless flip-chip bonding for the photonic assembly - comparison between evaporated SnPb (60/40) and AuSn (80/20) solder T2 - 5th International Conference on Micro-Electro-, -Opto-, -Mechanical Systems and Components CY - Potsdam, Germany DA - 1996-09-17 PY - 1996 SN - 3-8007-2200-3 VL - 5 SP - 91 EP - 97 PB - VDE-Verl. CY - Berlin AN - OPUS4-2544 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Escher, M. A1 - Weber, N. A1 - Funnenmann, D. A1 - Krömker, B. T1 - Testing of Lateral Resolution in the Nanometre Range Using the BAM-L002 - Certified Reference Material: Application to ToF-SIMS IV and NanoESCA Instruments T2 - International Symposium on Practical Surface Analysis CY - Jeju, Republic of Corea DA - 2004-10-04 KW - ESCA KW - Nanometrologie KW - Nanotechnologie KW - Oberflächenanalytik KW - SIMS KW - XPS KW - Zertifiziertes Referenzmaterial PY - 2005 SN - 1341-1756 SN - 1347-8400 VL - 12 IS - 2 SP - 78 EP - 82 CY - Tsukuba AN - OPUS4-11146 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - Surface analysis of dental enamel by TOF-SIMS, SEM and TEM T2 - SIMS EUROPE 2006 CY - Münster, Germany DA - 2006-09-24 PY - 2006 AN - OPUS4-13190 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wirth, Thomas T1 - TOF-SIMS investigation of coated glass beads T2 - 18th International Conference on Secondary Ion Mass Spectrometry CY - Riva del Garda, Italy DA - 2011-09-18 PY - 2011 AN - OPUS4-24240 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Moritz, W. A1 - Werner, R. A1 - Tausche, A. A1 - Cherkaschinin, G. A1 - Molajew, R. A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Linke, S. T1 - Alloys for gas sensors investigated using the continuous gradient-high throughput screening macroscope CG-HTSM N2 - Ternary alloys have been studied as the gate metal of chemical sensors based on the field effect in silicon. The investigation of reduced poisoning of hydrogen sensors by H2S is presented in the alloy system PdxNiyCo1-x-y. A new method in high throughput screening of alloys is applied. Not singular sample compositions but a continuous gradient in alloy concentrations was produced on a semiconductor sample. A laser scanning system produces a photo current in the semiconductor to map the sensor signal and provide a quasi continuous alloy characterization. The new system is therefore called Continuous Gradient—High Throughput Screening Macroscope (CG-HTSM). Typically 625 alloys are characterized in 15 minutes. The resolution of our set-up allows distinguishing 100.000 alloy compositions. KW - Alloy KW - Sensor KW - High throughput screening KW - Macroscope PY - 2011 DO - https://doi.org/10.1166/sl.2011.1586 SN - 1546-198X SN - 1546-1971 VL - 9 IS - 2 SP - 662 EP - 664 PB - American Scientific Publishers (ASP) CY - Stevenson Ranch, CA, USA AN - OPUS4-24504 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Abou-Ras, D. A1 - Caballero, R. A1 - Fischer, C.-H. A1 - Kaufmann, C.A. A1 - Lauermann, I. A1 - Mainz, R. A1 - Mönig, H. A1 - Schöpke, A. A1 - Stephan, C. A1 - Streeck, C. A1 - Schorr, S. A1 - Eicke, A. A1 - Döbeli, M. A1 - Gade, B. A1 - Hinrichs, J. A1 - Nunney, T. A1 - Dijkstra, H. A1 - Hoffmann, V. A1 - Klemm, D. A1 - Efimova, V. A1 - Bergmaier, A. A1 - Dollinger, G. A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Rockett, A.A. A1 - Perez-Rodriguez, A. A1 - Alvarez-Garcia, J. A1 - Izquierdo-Roca, V. A1 - Schmid, T. A1 - Choi, P.-P. A1 - Müller, M. A1 - Bertram, F. A1 - Christen, J. A1 - Khatri, H. A1 - Collins, R.W. A1 - Marsillac, S. A1 - Kötschau, I. T1 - Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films N2 - The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 µm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limits. KW - Elemental distributions KW - Comparison KW - Depth profiling KW - Chemical mapping KW - Thin films KW - Solar cells KW - Chalcopyrite-type KW - Cu(In,Ga)Se2 PY - 2011 DO - https://doi.org/10.1017/S1431927611000523 SN - 1431-9276 SN - 1435-8115 VL - 17 IS - 5 SP - 728 EP - 751 PB - Cambridge University Press CY - New York, NY AN - OPUS4-24506 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beck, Uwe A1 - Reiners, Georg A1 - Wirth, Thomas A1 - Hoffmann, V. A1 - Präßler, F. T1 - Multilayer reference coatings for depth profile standards N2 - Depth profiles of layer systems consisting of different film materials and having different thicknesses are of great practical importance. Multilayer reference coatings of conducting (Ti/Al) and non-conducting (SiO2/Si3N4) material are analyzed with Auger electron spectroscopy (AES) and glow discharge optical emission spectroscopy (GDOES) depth profiling. Deposition techniques, physical vapor deposition for Ti/Al layers and plasma-enhanced chemical vapor deposition for SiO2/Si3N4 layers, as well as measurement and testing procedures for the determination of layer thickness such as optical and mechanical stylus and spectroscopie ellipsometry are discussed. GDOES depth profiles in direct current (d.c.) and radio frequency (r.f.) mode are related to measurements of crater profiles and compared with line scans and depth profiles performed by AES. It is shown that such multilayer reference systems are appropriate for calibration of depth profiles, i.e. the definition and the evaluation of the depth resolution at the interface, the determination of sputter rates both for d.c.- and r.f.-GDOES and AES, the optimization of the conditions of analysis, and the quantification of analysis itself. KW - Depth profiling KW - Multilayers KW - Glow discharge KW - Auger electron spectroscopy PY - 1996 DO - https://doi.org/10.1016/S0040-6090(96)09083-9 SN - 0040-6090 VL - 290-291 SP - 57 EP - 62 PB - Elsevier CY - Amsterdam AN - OPUS4-25436 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -