TY - JOUR A1 - Winkelmann, Aimo A1 - Nolze, Gert T1 - Analysis of Kikuchi band contrast reversal in electron backscatter diffraction patterns of silicon N2 - We analyze the contrast reversal of Kikuchi bands that can be seen in electron backscatter diffraction (EBSD) patterns under specific experimental conditions. The observed effect can be reproduced using dynamical electron diffraction calculations. Two crucial contributions are identified to be at work: First, the incident beam creates a depth distribution of incoherently backscattered electrons which depends on the incidence angle of the beam. Second, the localized inelastic scattering in the outgoing path leads to pronounced anomalous absorption effects for electrons at grazing emission angles, as these electrons have to go through the largest amount of material. We use simple model depth distributions to account for the incident beam effect, and we assume art exit angle dependent effective crystal thickness in the dynamical electron diffraction calculations. Very good agreement is obtained with experimental observations for silicon at 20 key primary beam energy. KW - Electron backscatter diffraction KW - Kikuchi patterns KW - Dynamical electron diffraction simulation PY - 2010 U6 - https://doi.org/10.1016/j.ultramic.2009.11.008 SN - 0304-3991 VL - 110 IS - 3 SP - 190 EP - 194 PB - Elsevier CY - New York, NY AN - OPUS4-24008 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -