TY - JOUR A1 - Österle, Werner A1 - Dmitriev, A.I. A1 - Orts Gil, Guillermo A1 - Schneider, Thomas A1 - Ren, H. A1 - Sun, X. T1 - Verification of nanometre-scale modelling of tribofilm sliding behaviour JF - Tribology International N2 - A model based on movable cellular automata has been applied to study the sliding behaviour of tribofilms formed during automotive braking. Since it is not possible yet to determine the composition of real tribofilms quantitatively, final verification of modelling results is needed. This was done by preparing artificial third bodies with compositions and nanostructures matching the ones assumed for modelling. Pin-on-disc tests were performed while applying the artificial third bodies to the contact. The results revealed that not only the structure of the third body but also the amount of the applied normal pressure determines the COF obtained by modelling and that much better correlation between experimental and modelling results was obtained while assuming high normal pressures at asperity contacts. KW - Automotive braking KW - Third body KW - Modelling KW - Sliding simulation PY - 2013 DO - https://doi.org/10.1016/j.triboint.2013.02.018 SN - 0301-679X VL - 62 SP - 155 EP - 162 PB - Butterworth-Heinemann CY - Oxford AN - OPUS4-27946 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner A1 - Dörfel, Ilona A1 - Urban, Ingrid A1 - Reier, T. A1 - Schultze, J. T1 - XPS and XTEM study of AlN formation by N+2 implantation of aluminium JF - Surface and coatings technology N2 - X-ray photoelectron spectroscopy (XPS) and cross-sectional transmission electron microscopy (XTEM) were used to study the formation of AlN films by N+2 ion implantation of aluminium at energies of 3 keV and 100 keV. In both cases, a two-stage mechanism was found, comprising first the oriented precipitation of small particles of the hexagonal AlN-phase, followed by growth and coalescence finally forming a continuous AlN-layer while increasing the implantation dose from 1×1017 cm-2 to 2×1017 cm-2. The results of both methods are in excellent agreement and furthermore provide complementary information concerning chemical composition and binding energies as well as microstructural details. KW - AIN KW - Aluminium KW - N2+ KW - Implantation KW - XPS KW - XTEM PY - 1998 DO - https://doi.org/10.1016/S0257-8972(98)00355-7 SN - 0257-8972 VL - 102 IS - 1-2 SP - 168 EP - 174 PB - Elsevier Science CY - Lausanne AN - OPUS4-2363 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner A1 - Nebauer, E. A1 - Hilsenbeck, J. A1 - Würfl, J. A1 - Klein, A. T1 - XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems JF - Semiconductor science and technology N2 - The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray diffraction. For two typical rapid thermal annealing steps at 750 °C (non-ohmic behaviour) and 850 °C (ohmic behaviour) the intermetallic phases at the metal-semiconductor interface are presented. Increased annealing leads to the transformation of an Al2Au-AlAuTi phase mixture to a mixture of Al2Au-Al3Au8 phases and the formation of Ti-Al-nitride layers at the interfaces. In light of these results the electrical contact properties are discussed. PY - 2002 DO - https://doi.org/10.1088/0268-1242/17/3/312 SN - 0268-1242 SN - 1361-6641 VL - 17 IS - 3 SP - 249 EP - 254 PB - IOP Publ. CY - Bristol AN - OPUS4-1380 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner A1 - Ressel, P. T1 - XTEM investigation of Ge/Pd shallow contact to p-IN0.53Ga0.47As JF - Materials science & engineering B N2 - Cross-sectional transmission electron microscopy, in combination with energy dispersive X-ray spectroscopy and focused beam microdiffraction, was applied to study the solid-state reactions taking place during contact formation of the system Ge(115 nm)/Pd(50 nm)—In0.53Ga0.47As. In order to get information about the sequence of the different processes, rapid thermal, annealing experiments in the range 225–400 °C were performed. The following features were observed: at 225 °C Pd reacted with the substrate forming the quaternary phase PdxIn0.53Ga0.47As (x ˜ 4), and with the Ge-layer forming mainly PdGe and Pd2Ge. Between PdxIn0.53Ga0.47As and In0.53Ga0.47As, a 5 nm thick amorphous Pd-In-Ga-As layer remained, indicating that the first reaction step was solid-state amorphization. After annealing at 350 °C, PdxIn0.53Ga0.47As disappeared and regrowth of In0.53Ga0.47As occured. Finally, at 400 °C, residual Ge from the amorphous top layer diffused to the interface and grew epitaxially on the regrown In0.53Ga0.47As, thus separating the III–V compound semiconductor from the Pd-Ge reaction products. The interface remained flat, while only about 10 nm of the active In0.53Ga0.47As layer had been modified during the annealing processes. PY - 1996 DO - https://doi.org/10.1016/0921-5107(96)01580-2 SN - 0921-5107 SN - 1873-4944 VL - 40 IS - 1 SP - 42 EP - 49 PB - Elsevier CY - Amsterdam AN - OPUS4-2513 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner T1 - Zur Problematik der elektronenmikroskopischen Ermittlung der Versetzungsdichte in kaltverformten kohlenstoffarmen Stählen JF - Praktische Metallographie = Practical metallography PY - 1992 SN - 0032-678X VL - 29 SP - 400 EP - 413 PB - Hanser CY - München AN - OPUS4-2474 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -