TY - CONF A1 - Österle, Werner A1 - Dmitriev, A.I. A1 - Urban, Ingrid ED - Jayashree Bijwe, T1 - Characterization of up to date brake friction materials T2 - IWAAFC-1, International Workshop on Advances in Asbestos free Friction Composites CY - Delhi, India DA - 2006-01-05 PY - 2006 SP - 21 EP - 35 CY - Delhi, India AN - OPUS4-18700 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Österle, Werner A1 - Urban, Ingrid A1 - Gesatzke, Wolfgang A1 - Rooch, Heidemarie ED - Bartz, Wilfried J. T1 - Characterization and evaluation of the formation of friction layers during braking with conventional PMC friction material against a cast iron rotor T2 - 14th International Colloquium Tribology, "Tribology and Lubrication Engineering" CY - Stuttgart, Germany DA - 2004-01-13 PY - 2004 SN - 3-924813-54-X VL - 1 SP - 483 EP - 489 PB - Techn. Akad. Esslingen CY - Ostfildern AN - OPUS4-3494 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Senoner, Mathias A1 - Wirth, Thomas A1 - Unger, Wolfgang A1 - Österle, Werner A1 - Kaiander, I. A1 - Sellin, R. L. A1 - Bimberg, D. ED - Wilkening, G. ED - Koenders, L. T1 - Testing the Lateral Resolution in the Nanometre Range with a New Type of Certified Reference Material T2 - NanoScale 2004 Seminar ; 6th Seminar on Quantitative Microscopy ; 2nd Seminar on Nanoscale Calibration Standards and Methods CY - Braunschweig, Germany DA - 2004-03-25 KW - Laterale Auflösung KW - Nanometrologie KW - Nanotechnologie KW - Oberflächenanalytik KW - Zertifiziertes Referenzmaterial PY - 2004 SN - 3-527-40502-X DO - https://doi.org/10.1002/3527606661.ch21 SP - 282 EP - 294 PB - Wiley-VCH CY - Weinheim AN - OPUS4-7541 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Seah, M.P. A1 - Spencer, S.J. A1 - Bensebaa, F. A1 - Vickridge, I. A1 - Danzebrink, H. A1 - Krumrey, M. A1 - Gross, Thomas A1 - Österle, Werner A1 - Wendler, E. A1 - Rheinländer, B. A1 - Azuma, Y. A1 - Kojima, I. A1 - Suzuki, N. A1 - Suzuki, M. A1 - Tanuma, S. A1 - Moon, D.W. A1 - Lee, H.J. A1 - Cho, H.M. A1 - Chen, H.Y. A1 - Wee, A. T. S. A1 - Osipowicz, T. A1 - Pan, J.S. A1 - Jordaan, W.A. A1 - Hauert, R. A1 - Klotz, U. A1 - van der Marel, C. A1 - Verheijen, M. A1 - Tamminga, Y. A1 - Jeynes, C. A1 - Bailey, P. A1 - Biswas, S. A1 - Falke, U. A1 - Nguyen, N.V. A1 - Chandler-Horowitz, D. A1 - Ehrstein, J.R. A1 - Muller, D. A1 - Dura, J.A. T1 - Ultra-thin SiO2 on Si, Part V: Results of a CCQM Pilot Study of Thickness Measurements KW - SiO2 KW - Thin films KW - Thickness KW - XPS KW - Ellipsometry KW - TEM PY - 2003 SN - 1473-2734 SP - 57 pages AN - OPUS4-4118 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Österle, Werner T1 - Controlling the microstructure of engineering materials - a measure for obtaining taylored properties T2 - Iren University of Science and Technology CY - Tehran, Iran DA - 2002-05-21 PY - 2002 AN - OPUS4-6106 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Österle, Werner T1 - The focused ion beam technique - eine interessante Alternative, auch für konventionelle Werkstoffe T2 - VDEh-Arbeitskreis, Elektronenmicroskopie CY - Duisburg, Germany DA - 2002-11-07 PY - 2002 AN - OPUS4-6108 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Nebauer, E. A1 - Österle, Werner A1 - Hilsenbeck, J. A1 - Würfl, J. A1 - Klein, A. T1 - XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems N2 - The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray diffraction. For two typical rapid thermal annealing steps at 750 ◦C (non-ohmic behaviour) and 850 ◦C (ohmic behaviour) the intermetallic phases at the metal–semiconductor interface are presented. Increased annealing leads to the transformation of an Al2Au-AlAuTi phase mixture to a mixture of Al2Au-Al3Au8 phases and the formation of Ti-Al-nitride layers at the interfaces. In light of these results the electrical contact properties are discussed. KW - Ohmic contact KW - WSiN diffusion barrier KW - Rapid thermal annealing KW - Intermetallic phases KW - AlGaN/GaN heterostructure PY - 2002 SN - 0268-1242 VL - 17 SP - 249 EP - 254 PB - IOP Publishing Ltd AN - OPUS4-38543 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Würfl, J. A1 - Hilsenbeck, J. A1 - Nebauer, E. A1 - Tränkle, G. A1 - Obloh, H. A1 - Österle, Werner T1 - Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts N2 - Recent progress in the development of A1GaN/GaN heterostructure field effect transistors (HFETs) Shows the great potential towards high temperature / high power electronics. Nevertheless investigations on reliability properties of GaN-based devices are still at the beginning. The frequently used Ti/A1 based ohmic and Pt based Schottky contacts suffer from strong Degradation after aging at elevated temperatures. Therefore new contact systems have to be employed. Concerning the source and drain metallization we used an amorphous WSiN barrier layer as applied for GaAs on top of the Ti/Al-based ohmic contact. This technique significantly reduces the in-diffusion of the Au-containing overlayer, furthermore the barrier layer guaranties smooth contact morphology after RTA and aging, respectively. For the Schottky metallization the Ir/Au system was used. Reliability studies performed on HFET devices containing refractory Ti/A1/Ti/Au/WSiN ohmic and Ir/Au Schottky contacts demonstrate stable conditions during 120h aging at 500°C. KW - Semiconductor KW - Reliability KW - Contact resistance KW - Heterostructure field effect transistor PY - 2000 SN - 0026-2714 VL - 40 SP - 1689 EP - 1693 PB - Elsevier AN - OPUS4-38541 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bettge, Dirk A1 - Österle, Werner T1 - “Cube slip” in near-[111] oriented specimens of a single-crystal nickel-base superalloy N2 - In the past few years, it has been discussed with increasing frequency, whether cube slip does occur in gamma' hardened nickel-base superalloys. Occurrence of cube slip has consequences for the modeling of orientation dependence of the CRSS. Until now, there are only few experimental investigations. In principle, cube slip should be possible in primitive cubic lattices (e.g. L12 ordered gamma' phase) but not in face centered cubic ones (e.g. Ni solid solution). The most favourable specimen orientations are near [111], where the Schmid factors for this type of glide exceed those for octahedral systems. There are two basic methods to detect cube slip: macroscopic slip trace analysis and Transmission electron microscopy (TEM) investigation of the dislocation structure. Few observations of cube slip by macroscopic slip traces are reported in the literature. But it is still uncertain under which test conditions cube slip occurs and what the dislocation mechanisms are. Cube slip was observed during tensile or compression tests of several first generation superalloys, but it seems not to occur during shear creep deformation (e.g. CMSX-4 at 980°C), and it is also lacking under conventional tensile or compression loading, if the gmma' particles are small. No observations were ever reported of dislocations gliding on {001} planes in matrix channels. KW - Cube slip KW - Nickel-base superalloy KW - Dislocations KW - TEM PY - 1999 DO - https://doi.org/10.1016/S1359-6462(98)00446-1 SN - 1359-6462 VL - 40 IS - 4 SP - 389 EP - 395 PB - Elsevier AN - OPUS4-38220 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Reier, T. A1 - Schultze, J. W. A1 - Österle, Werner A1 - Buchal, C. T1 - Nucleation and growth of AlN nanocrystallites prepared by N+2 implantation N2 - The formation of AlN films prepared by N+2 ion implantation into aluminium was investigated using X-ray and Auger photoelectron spectroscopy ( XPS, AES) as well as cross-sectional transmission electron microscopy (XTEM). After 100-keV N+2 implantation of low doses (1×1017 cm−2), the formation of hexagonal AlN nanocrystals (crystal size <5 nm, Ncrystal=1017 cm−3) was observed. Their orientation is strongly correlated with the aluminium matrix. With the dose increasing to 3×1017 cm−2, crystal growth follows, finally forming a homogeneous AlN-layer. Furthermore, the diffraction patterns show an increasing amount of misorientation with increasing dose. From the crystal size distribution, we conclude that continuous nucleation takes place. Samples implanted with an energy of 3 keV exhibit analogous behaviour. Nitride growth was further investigated using microstructured AlN formed by 3-keV implantation through movable TEM-masks (structure size: 15–150 mm). In the case of high N+2 doses (D&5×1017 cm−2), AlN is detected by AES in the shielded area at a distance of up to 10 mm from the exposed region. The Diffusion coefficient was calculated to be 10−10 cm2 s−1. The formation of AlN proceeds in two steps. After a continuous nucleation, diffusion-assisted Crystal growth takes place until a homogeneous AlN layer results. KW - Aluminium nitride KW - Ion implantation KW - Nanocrystallites KW - Surface analysis KW - XTEM PY - 1998 SN - 0257-8972 VL - 103-104 SP - 415 EP - 420 PB - Elsevier AN - OPUS4-38539 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -