TY - JOUR A1 - Österle, Werner A1 - Dörfel, Ilona A1 - Urban, Ingrid A1 - Reier, T. A1 - Schultze, J. T1 - XPS and XTEM study of AlN formation by N+2 implantation of aluminium N2 - X-ray photoelectron spectroscopy (XPS) and cross-sectional transmission electron microscopy (XTEM) were used to study the formation of AlN films by N+2 ion implantation of aluminium at energies of 3 keV and 100 keV. In both cases, a two-stage mechanism was found, comprising first the oriented precipitation of small particles of the hexagonal AlN-phase, followed by growth and coalescence finally forming a continuous AlN-layer while increasing the implantation dose from 1×1017 cm-2 to 2×1017 cm-2. The results of both methods are in excellent agreement and furthermore provide complementary information concerning chemical composition and binding energies as well as microstructural details. KW - AIN KW - Aluminium KW - N2+ KW - Implantation KW - XPS KW - XTEM PY - 1998 U6 - https://doi.org/10.1016/S0257-8972(98)00355-7 SN - 0257-8972 VL - 102 IS - 1-2 SP - 168 EP - 174 PB - Elsevier Science CY - Lausanne AN - OPUS4-2363 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -