TY - JOUR A1 - Österle, Werner A1 - Nebauer, E. A1 - Hilsenbeck, J. A1 - Würfl, J. A1 - Klein, A. T1 - XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems N2 - The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray diffraction. For two typical rapid thermal annealing steps at 750 °C (non-ohmic behaviour) and 850 °C (ohmic behaviour) the intermetallic phases at the metal-semiconductor interface are presented. Increased annealing leads to the transformation of an Al2Au-AlAuTi phase mixture to a mixture of Al2Au-Al3Au8 phases and the formation of Ti-Al-nitride layers at the interfaces. In light of these results the electrical contact properties are discussed. PY - 2002 U6 - https://doi.org/10.1088/0268-1242/17/3/312 SN - 0268-1242 SN - 1361-6641 VL - 17 IS - 3 SP - 249 EP - 254 PB - IOP Publ. CY - Bristol AN - OPUS4-1380 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Nebauer, E. A1 - Österle, Werner A1 - Hilsenbeck, J. A1 - Würfl, J. A1 - Klein, A. T1 - XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems N2 - The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray diffraction. For two typical rapid thermal annealing steps at 750 ◦C (non-ohmic behaviour) and 850 ◦C (ohmic behaviour) the intermetallic phases at the metal–semiconductor interface are presented. Increased annealing leads to the transformation of an Al2Au-AlAuTi phase mixture to a mixture of Al2Au-Al3Au8 phases and the formation of Ti-Al-nitride layers at the interfaces. In light of these results the electrical contact properties are discussed. KW - Ohmic contact KW - WSiN diffusion barrier KW - Rapid thermal annealing KW - Intermetallic phases KW - AlGaN/GaN heterostructure PY - 2002 SN - 0268-1242 VL - 17 SP - 249 EP - 254 PB - IOP Publishing Ltd AN - OPUS4-38543 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -