TY - CONF A1 - Kloß, Heinz A1 - Österle, Werner A1 - Dmitriev, A.I. ED - Bartz, Wilfried J. T1 - Modelling mechanical friction and wear behaviour using numerical results of the movable cellular automata (MCA) method N2 - In the mechanical friction and wear process, normal and tangential (shear) forces cause elastic and plastic deformations, generate cracks and form loose wear particles through fracture processes. Depending on the working conditions, the material properties and the real contact Situation (topography), a third body is formed as a mechanical ly mixed layer, which determines different running-in and steady-state behaviours. Two dimensional (2D) MCA Simulation results will be described via empirical equations, which are related to the incubation time (period without wear) and the following running-in wear rate (kinetic concept of strength, fatigue wear model). In order to understand the running-in and steady-state wear, kinetic model equations for mass balance of the third body are useful and are therefore to be included in the investigation. For a more complex material behaviour, numerical Simulation results are also presented for friction at the pad-disk interface of automotive brakes. T2 - 19th International colloquium Tribology - Industrial and automotive lubrication CY - Stuttgart/Ostfildern, Germany DA - 21.01.2014 PY - 2014 SN - 978-3-943563-10-8 SP - Paper 8.10, 1 EP - 7 CY - Stuttgart/Ostfildern AN - OPUS4-30437 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Österle, Werner A1 - Gesatzke, W. T1 - Dislocation particle interaction during secondary hardening and yielding of HSLA steel T2 - Riso International Symposium on Metallurgy and Material Science CY - Roskilde, Denmark DA - 05.09.1983 PY - 1983 SP - 473 EP - 478 AN - OPUS4-36051 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner A1 - Wever, H. A1 - Bunge, H. T1 - Development of microstructure and texture of cold rolling α iron PY - 1983 SN - 0026-0681 IS - 17 SP - 333 EP - 340 PB - Maney Publ. CY - London, UK AN - OPUS4-36056 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Dörfel, Ilona A1 - Steinborn, Gabriele A1 - Langner, Jeanette A1 - Krietsch, Arne A1 - Seeger, Stefan A1 - Österle, Werner A1 - Schmidt, Martin A1 - Bresch, Harald T1 - Dossier on titanium dioxide - Part 1/1 - NM 105 N2 - In November 2007, OECD’s Working Party on Manufactured Nanomaterials (WPMN) launched the Sponsorship Programme for the Testing of Manufactured Nanomaterials (hereafter the Testing Programme). The objective was to conduct specific tests, relevant to human health and environmental safety endpoints, on a variety of manufactured nanomaterials (MN). The outcomes of the Testing Programme were intended to assess the applicability of the existing test guidelines1 to nanomaterials, as well as to provide useful information on any intrinsic properties of MNs, which are different from the same bulk material with greater external dimensions. Understanding the properties of NMs is crucial to choose appropriate strategies for hazard identification, risk assessment or risk management measures. The Testing Programme involved delegations from OECD member countries, some non-member economies and other stakeholders. The broad international representation, from a range of delegations enabled the programme to pool expertise and resources without which this programme would not have been possible. KW - Nanomaterial KW - Nanoparticle KW - Sponsorship programme KW - Nano characterization PY - 2015 UR - http://www.oecd.org/env/ehs/nanosafety/dossier-on-silver-nanoparticles-part1-1.htm IS - 54 SP - 27 CY - Paris AN - OPUS4-35430 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bettge, Dirk A1 - Österle, Werner T1 - “Cube slip” in near-[111] oriented specimens of a single-crystal nickel-base superalloy N2 - In the past few years, it has been discussed with increasing frequency, whether cube slip does occur in gamma' hardened nickel-base superalloys. Occurrence of cube slip has consequences for the modeling of orientation dependence of the CRSS. Until now, there are only few experimental investigations. In principle, cube slip should be possible in primitive cubic lattices (e.g. L12 ordered gamma' phase) but not in face centered cubic ones (e.g. Ni solid solution). The most favourable specimen orientations are near [111], where the Schmid factors for this type of glide exceed those for octahedral systems. There are two basic methods to detect cube slip: macroscopic slip trace analysis and Transmission electron microscopy (TEM) investigation of the dislocation structure. Few observations of cube slip by macroscopic slip traces are reported in the literature. But it is still uncertain under which test conditions cube slip occurs and what the dislocation mechanisms are. Cube slip was observed during tensile or compression tests of several first generation superalloys, but it seems not to occur during shear creep deformation (e.g. CMSX-4 at 980°C), and it is also lacking under conventional tensile or compression loading, if the gmma' particles are small. No observations were ever reported of dislocations gliding on {001} planes in matrix channels. KW - Cube slip KW - Nickel-base superalloy KW - Dislocations KW - TEM PY - 1999 DO - https://doi.org/10.1016/S1359-6462(98)00446-1 SN - 1359-6462 VL - 40 IS - 4 SP - 389 EP - 395 PB - Elsevier AN - OPUS4-38220 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ressel, P. A1 - Österle, Werner A1 - Urban, Ingrid A1 - Klein, A. A1 - Vogel, K. A1 - Kräutle, H. T1 - Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As N2 - Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, and energy-dispersive x-ray analysis. Solid-phase regrowth is observed to occur similarly as in Pd/Ge contacts on GaAs or InP. The reaction starts at low temperatures with the formation of an amorphous Pd–In–Ga–As layer, which crystallizes at elevated temperatures yielding hexagonal Pd4In0.53Ga0.47As being first described in this work. At temperatures .250 °C, this phase decomposes due to epitaxial solid-phase regrowth of In0.53Ga0.47As and formation of Pd–Ge phases. The stable composition is reached at temperatures .350 °C with excess Ge diffused through top Pd–Ge to the contact interface and growing epitaxially on the semiconductor. KW - Semiconductor KW - Thin film contact layer KW - Electron microscopy KW - Intermetallic phases PY - 1996 DO - https://doi.org/10.1063/1.363348 SN - 0021-8979 VL - 80 IS - 7 SP - 3910 EP - 3914 AN - OPUS4-38537 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Reier, T. A1 - Schultze, J. W. A1 - Österle, Werner A1 - Buchal, C. T1 - Nucleation and growth of AlN nanocrystallites prepared by N+2 implantation N2 - The formation of AlN films prepared by N+2 ion implantation into aluminium was investigated using X-ray and Auger photoelectron spectroscopy ( XPS, AES) as well as cross-sectional transmission electron microscopy (XTEM). After 100-keV N+2 implantation of low doses (1×1017 cm−2), the formation of hexagonal AlN nanocrystals (crystal size <5 nm, Ncrystal=1017 cm−3) was observed. Their orientation is strongly correlated with the aluminium matrix. With the dose increasing to 3×1017 cm−2, crystal growth follows, finally forming a homogeneous AlN-layer. Furthermore, the diffraction patterns show an increasing amount of misorientation with increasing dose. From the crystal size distribution, we conclude that continuous nucleation takes place. Samples implanted with an energy of 3 keV exhibit analogous behaviour. Nitride growth was further investigated using microstructured AlN formed by 3-keV implantation through movable TEM-masks (structure size: 15–150 mm). In the case of high N+2 doses (D&5×1017 cm−2), AlN is detected by AES in the shielded area at a distance of up to 10 mm from the exposed region. The Diffusion coefficient was calculated to be 10−10 cm2 s−1. The formation of AlN proceeds in two steps. After a continuous nucleation, diffusion-assisted Crystal growth takes place until a homogeneous AlN layer results. KW - Aluminium nitride KW - Ion implantation KW - Nanocrystallites KW - Surface analysis KW - XTEM PY - 1998 SN - 0257-8972 VL - 103-104 SP - 415 EP - 420 PB - Elsevier AN - OPUS4-38539 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kuhmann, J. F. A1 - Chiang, C. H. A1 - Harde, P. A1 - Reier, F. A1 - Österle, Werner A1 - Urban, Ingrid A1 - Klein, A. T1 - Pt thin-film metallization for FC-bonding using SnPb60/40 solder bump metallurgy N2 - Platinum does not form any adherent oxides and can be easily wetted by tin-based solders. Platinum is also an available metallization in semiconductor laboratories. Therefore we investigated the diffusion of platinum thin-film metallizations into eutectic tin–lead solder by using a high-resolution secondary ion mass spectroscopy (SIMS) profiling from the back side. It is shown that an intermetallic phase (PtSn4) is formed during soldering, which controls the consumption of platinum during soldering and in operation. The consumption of platinum follows the well-known parabolic diffusion law. The activation energy of this process is 0.63 eV. Even at extended heating cycles of 2 min at 250°C, 190 nm from the original 300 nm of the platinum film remain undissolved. This high stability makes platinum a very attractive thin-film metallization for flip-chip (FC) bonding of new microsystems. KW - Pt thin film metallization KW - FC solder bonding KW - Diffusion KW - SIMS PY - 1998 SN - 0921-5093 VL - A242 SP - 22 EP - 25 PB - Elsevier AN - OPUS4-38540 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Würfl, J. A1 - Hilsenbeck, J. A1 - Nebauer, E. A1 - Tränkle, G. A1 - Obloh, H. A1 - Österle, Werner T1 - Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts N2 - Recent progress in the development of A1GaN/GaN heterostructure field effect transistors (HFETs) Shows the great potential towards high temperature / high power electronics. Nevertheless investigations on reliability properties of GaN-based devices are still at the beginning. The frequently used Ti/A1 based ohmic and Pt based Schottky contacts suffer from strong Degradation after aging at elevated temperatures. Therefore new contact systems have to be employed. Concerning the source and drain metallization we used an amorphous WSiN barrier layer as applied for GaAs on top of the Ti/Al-based ohmic contact. This technique significantly reduces the in-diffusion of the Au-containing overlayer, furthermore the barrier layer guaranties smooth contact morphology after RTA and aging, respectively. For the Schottky metallization the Ir/Au system was used. Reliability studies performed on HFET devices containing refractory Ti/A1/Ti/Au/WSiN ohmic and Ir/Au Schottky contacts demonstrate stable conditions during 120h aging at 500°C. KW - Semiconductor KW - Reliability KW - Contact resistance KW - Heterostructure field effect transistor PY - 2000 SN - 0026-2714 VL - 40 SP - 1689 EP - 1693 PB - Elsevier AN - OPUS4-38541 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Nebauer, E. A1 - Österle, Werner A1 - Hilsenbeck, J. A1 - Würfl, J. A1 - Klein, A. T1 - XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems N2 - The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray diffraction. For two typical rapid thermal annealing steps at 750 ◦C (non-ohmic behaviour) and 850 ◦C (ohmic behaviour) the intermetallic phases at the metal–semiconductor interface are presented. Increased annealing leads to the transformation of an Al2Au-AlAuTi phase mixture to a mixture of Al2Au-Al3Au8 phases and the formation of Ti-Al-nitride layers at the interfaces. In light of these results the electrical contact properties are discussed. KW - Ohmic contact KW - WSiN diffusion barrier KW - Rapid thermal annealing KW - Intermetallic phases KW - AlGaN/GaN heterostructure PY - 2002 SN - 0268-1242 VL - 17 SP - 249 EP - 254 PB - IOP Publishing Ltd AN - OPUS4-38543 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -