TY - JOUR A1 - Link, T. A1 - Österle, Werner T1 - Röntgenmikroanalyse im Elektronenmikroskop, Teil IV: Superlegierungen PY - 1991 SN - 0032-678X VL - 28 SP - 101 EP - 114 PB - Hanser CY - München AN - OPUS4-2469 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner T1 - Gefüge und Festigkeit metallischer Werkstoffe PY - 1987 SN - 0028-1042 SN - 1432-1904 VL - 77 SP - 317 EP - 325 PB - Springer CY - Berlin AN - OPUS4-2454 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Materna-Morris, E. A1 - Österle, Werner A1 - Schwaab, P. T1 - Röntgenmikroanalyse im Elektronenmikroskop, Teil II: Härtbare, warmfeste Stähle PY - 1990 SN - 0032-678X VL - 27 SP - 383 EP - 402 PB - Hanser CY - München AN - OPUS4-2460 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Klaar, H.J. A1 - Schwaab, P. A1 - Österle, Werner T1 - Ringversuch zur quantitativen Ermittlung der Versetzungsdichte im Elektronenmikroskop PY - 1992 SN - 0032-678X VL - 29 SP - 3 EP - 25 PB - Hanser CY - München AN - OPUS4-2473 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner T1 - Zur Problematik der elektronenmikroskopischen Ermittlung der Versetzungsdichte in kaltverformten kohlenstoffarmen Stählen PY - 1992 SN - 0032-678X VL - 29 SP - 400 EP - 413 PB - Hanser CY - München AN - OPUS4-2474 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bettge, Dirk A1 - Österle, Werner A1 - Ziebs, Josef T1 - Temperature dependence of additional cyclic hardening of the nickel-base superalloy IN 738 LC during out-of-phase multiaxial deformation PY - 1995 SN - 1359-6462 SN - 1872-8456 VL - 32 IS - 10 SP - 1601 EP - 1606 PB - Elsevier CY - Oxford AN - OPUS4-2480 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner T1 - Bohrer für den Nanometerbereich - Mikrobearbeitung und Gefügedarstellung mit der Technik des fokussierten Ionenstrahls (FIB) KW - FIB KW - Mikrobearbeitung KW - TEM KW - Nanotechnologie PY - 2004 U6 - https://doi.org/10.3139/120.100573 SN - 0025-5300 VL - 46 IS - 3 SP - 113 EP - 117 PB - Carl Hanser Verlag CY - München AN - OPUS4-3495 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner A1 - Dörfel, Ilona A1 - Gesatzke, Wolfgang A1 - Rooch, Heidemarie A1 - Urban, Ingrid T1 - Charakterisierung tribologischer Kontakte mit FIB und TEM KW - FIB KW - TEM KW - Verbundwerkstoff KW - Bremse KW - Diamantschicht PY - 2004 SN - 0032-678X N1 - Sprachen: Deutsch/Englisch - Languages: German/English VL - 41 IS - 4 SP - 166 EP - 179 PB - Hanser CY - München AN - OPUS4-3496 LA - mul AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Österle, Werner A1 - Ressel, P. T1 - XTEM investigation of Ge/Pd shallow contact to p-IN0.53Ga0.47As N2 - Cross-sectional transmission electron microscopy, in combination with energy dispersive X-ray spectroscopy and focused beam microdiffraction, was applied to study the solid-state reactions taking place during contact formation of the system Ge(115 nm)/Pd(50 nm)—In0.53Ga0.47As. In order to get information about the sequence of the different processes, rapid thermal, annealing experiments in the range 225–400 °C were performed. The following features were observed: at 225 °C Pd reacted with the substrate forming the quaternary phase PdxIn0.53Ga0.47As (x ˜ 4), and with the Ge-layer forming mainly PdGe and Pd2Ge. Between PdxIn0.53Ga0.47As and In0.53Ga0.47As, a 5 nm thick amorphous Pd-In-Ga-As layer remained, indicating that the first reaction step was solid-state amorphization. After annealing at 350 °C, PdxIn0.53Ga0.47As disappeared and regrowth of In0.53Ga0.47As occured. Finally, at 400 °C, residual Ge from the amorphous top layer diffused to the interface and grew epitaxially on the regrown In0.53Ga0.47As, thus separating the III–V compound semiconductor from the Pd-Ge reaction products. The interface remained flat, while only about 10 nm of the active In0.53Ga0.47As layer had been modified during the annealing processes. PY - 1996 U6 - https://doi.org/10.1016/0921-5107(96)01580-2 SN - 0921-5107 SN - 1873-4944 VL - 40 IS - 1 SP - 42 EP - 49 PB - Elsevier CY - Amsterdam AN - OPUS4-2513 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ressel, P. A1 - Österle, Werner A1 - Urban, Ingrid A1 - Dörfel, Ilona A1 - Klein, A. A1 - Vogel, K. A1 - Kräutle, H. T1 - Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on IN0.53Ga0.47As PY - 1996 SN - 0021-8979 SN - 1089-7550 VL - 88 SP - 3910 EP - 3914 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-2514 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -