TY - JOUR A1 - Thamm, T. A1 - Wett, D. A1 - Bohne, W. A1 - Strub, Erik A1 - Röhrich, J. A1 - Szargan, R. A1 - Marx, G. A1 - Goedel, W.A. T1 - Investigations on PECVD boron carbonitride layers by means of ERDA, XPS and nano-indentation measurements N2 - The deposition of boron carbonitride layers on silicon substrates by a microwave plasma enhanced chemical vapour deposition (MW-PECVD) process using N-trimethylborazine (TMB) and benzene as precursors is presented. As plasma gases argon and nitrogen were used. In this investigation we focus on the influence of the gas composition, substrate temperature and -bias on the layer composition, layer structure as well as the thermal stability. The films were analyzed with respect to their composition and bonding structure using elastic recoil detection analysis (ERDA) and X-ray photoelectron spectroscopy (XPS). Furthermore, nanoindentation measurements before and after annealing tests at 500 and 700°C were performed. The measurements show a strong dependence of the structure and mechanical properties on the substrate temperature. The hydrogen content strongly decreases to 8 at.% with higher substrate temperatures. Simultaneously, the layer hardness and Young’s modulus increase up to 21 and 173 GPa, respectively. The hardness does not decrease after annealing for 1 hour at 700°C. KW - BCN KW - PECVD KW - XPS KW - ERDA KW - Hardness KW - Annealing tests PY - 2006 DO - https://doi.org/10.1007/s00604-006-0702-y SN - 0026-3672 SN - 1436-5073 VL - 156 IS - 1-2 SP - 53 EP - 56 PB - Springer CY - Wien AN - OPUS4-14268 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Pyzalla, A. A1 - Pinto, H. A1 - Wild, E. A1 - Poeste, T. A1 - Bohne, C. A1 - Reimers, W. A1 - Aßmus, Kristin A1 - Hübner, Wolfgang A1 - Fischer, A. ED - Bartz, Wilfried J. T1 - Mechanical Stress in Tribo-Layers T2 - 14th International Colloquium Tribology "Tribology and Lubrication Engineering" CY - Stuttgart, Deutschland DA - 2004-01-13 PY - 2004 SN - 3-924813-54-X VL - I SP - 85 EP - 89 PB - Techn. Akad. Esslingen CY - Ostfildern AN - OPUS4-3144 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Allsop, N. A. A1 - Schönmann, A. A1 - Belaidi, A. A1 - Muffler, H.-J. A1 - Mertesacker, B. A1 - Bohne, W. A1 - Strub, Erik A1 - Röhrich, J. A1 - Lux-Steiner, M. C. A1 - Fischer, C.-H. T1 - Indium sulfide thin films deposited by the spray ion layer gas reaction technique N2 - The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface. KW - Spray deposition KW - Indium sulfide KW - Ion layer gas reaction KW - ILGAR KW - X-ray diffraction KW - X-ray fluorescence KW - Deposition process PY - 2006 DO - https://doi.org/10.1016/j.tsf.2006.01.019 SN - 0040-6090 VL - 513 IS - 1-2 SP - 52 EP - 56 PB - Elsevier CY - Amsterdam AN - OPUS4-14267 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Strub, Erik A1 - Bohne, W. A1 - Röhrich, J. T1 - Determination of the energy loss of various elements in metal foils with the TOF-ERDA setup at the ISL Berlin N2 - The TOF-ERDA setup at the ISL Berlin was used to perform precise energy loss measurements of scattered ions. Different samples were irradiated with a 350 MeV Au beam and the TOF of the recoiled elements was measured without and with an additional metal stopping foil (Fe, Ag or Au) behind the target. The energy loss of the different elements in these foils was derived from the shift of the high energy edges of the spectra. The values are mainly consistent with the semi-empirical Ziegler/Biersack data. Deviations, trends and possible errors are discussed. KW - ERDA KW - Stopping power KW - Energy loss PY - 2006 DO - https://doi.org/10.1016/j.nimb.2006.03.079 SN - 0168-583X SN - 1872-9584 VL - 249 IS - 1-2 SP - 62 EP - 64 PB - Elsevier CY - Amsterdam AN - OPUS4-14269 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Martínez, F.L. A1 - Toledano, M. A1 - San Andrés, E. A1 - Mártil, I. A1 - González-Díaz, G. A1 - Bohne, W. A1 - Röhrich, J. A1 - Strub, Erik T1 - Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis KW - Hafnium oxide KW - Elastic recoil detection analysis KW - Oxygen KW - Interfacial silicon oxide PY - 2006 SN - 0040-6090 VL - 515 IS - 2 SP - 695 EP - 699 PB - Elsevier CY - Amsterdam AN - OPUS4-14270 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Gavrilov, S. A1 - Oja, I. A1 - Lim, B. A1 - Belaidi, A. A1 - Bohne, W. A1 - Strub, Erik A1 - Röhrich, J. A1 - Lux-Steiner, M.C. A1 - dittrich, T. T1 - Charge selective contact on ultra-thin In(OH)xSy/Pb(OH)xSy heterostructure prepared by SILAR N2 - Ultra-thin In(OH)x Sy/Pb(OH)x Sy heterostructures were formed by the wet chemical SILAR (successive ion layer adsorption and reaction) technique. ERDA (elastic recoil detection analysis) was used for stoichiometry analysis. The heterocontacts were conditioned by joint annealing of the two layers at different low temperatures in air. The charge selectivity was demonstrated with various small area solar cell structures. The results are discussed on the base of formation of bonds between sulphide clusters and passivation of defects with hydrogen containing species in hydroxy-sulphides. PY - 2006 DO - https://doi.org/10.1002/pssa.200521468 SN - 1862-6300 SN - 0031-8965 VL - 203 IS - 5 SP - 1024 EP - 1029 PB - Wiley-VCH CY - Berlin AN - OPUS4-14217 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Chromik, S. A1 - Huran, J. A1 - Strbík, V. A1 - Spanková, M. A1 - Vávra, I. A1 - Bohne, W. A1 - Röhrich, J. A1 - Strub, Erik A1 - Kovác, P. A1 - Stancek, S. T1 - Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by an in situ method N2 - MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of a B–Mg bilayer followed by in situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 °C to be reached. Transmission electron microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150–200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC~106 A cm-2 at 11 K. PY - 2006 DO - https://doi.org/10.1088/0953-2048/19/6/027 SN - 0953-2048 SN - 1361-6668 VL - 19 IS - 6 SP - 577 EP - 580 PB - IOPP CY - Bristol AN - OPUS4-14443 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hodoroaba, Vasile-Dan A1 - Klemm, D. A1 - Reinholz, Uwe A1 - Strub, E. A1 - Röhrich, J. A1 - Bohne, W. A1 - Hoffmann, V. A1 - Wetzig, K. T1 - Potential candidates of certified reference material for determination of hydrogen concentration with glow discharge optical emission spectrometry (GD-OES) - a feasibility study N2 - Three different coatings/layers have been found in a feasibility study as potential candidates for certified reference materials for the determination of hydrogen concentration by GD-OES: (i) electroplated zinc, (ii) carbon-rich coatings and (iii) amorphous silicon layers. KW - CRM KW - Hydrogen KW - GDS PY - 2008 DO - https://doi.org/10.1039/b717924c SN - 0267-9477 SN - 1364-5544 VL - 23 SP - 460 EP - 462 PB - Royal Society of Chemistry CY - London AN - OPUS4-17335 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -