TY - JOUR A1 - Chromik, S. A1 - Huran, J. A1 - Strbík, V. A1 - Spanková, M. A1 - Vávra, I. A1 - Bohne, W. A1 - Röhrich, J. A1 - Strub, Erik A1 - Kovác, P. A1 - Stancek, S. T1 - Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by an in situ method JF - Superconductor science and technology N2 - MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of a B–Mg bilayer followed by in situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 °C to be reached. Transmission electron microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150–200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC~106 A cm-2 at 11 K. PY - 2006 DO - https://doi.org/10.1088/0953-2048/19/6/027 SN - 0953-2048 SN - 1361-6668 VL - 19 IS - 6 SP - 577 EP - 580 PB - IOPP CY - Bristol AN - OPUS4-14443 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -