TY - JOUR A1 - Brzezinka, Klaus-Werner A1 - Wachsmann-Hogiu, S. A1 - Dreyer, J. A1 - Elsaesser, T. A1 - Werncke, W. A1 - Vodchits, A.I. T1 - Ultrafast intramolecular electron transfer studied by stationary vibrational and time-resolved resonance raman spectroscopy combined with ab initio calculations JF - Recent research developments in chemical physics PY - 2000 VL - 1 PB - Transworld Research Network CY - Trivandrum AN - OPUS4-1032 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kozich, V. A1 - Werncke, W. A1 - Dreyer, J. A1 - Brzezinka, Klaus-Werner A1 - Rini, M. A1 - Elsaesser, T. T1 - Vibrational excitation and energy redistribution after ultrafest internal conversion in 4-nitroaniline JF - The journal of chemical physics N2 - Nonequilibrium vibrational excitations of para-nitroaniline (PNA, 4-nitroaniline) occurring after internal conversion from the photoexcited charge transfer state are studied by picosecond anti-Stokes Raman scattering. Vibrational excess populations with distinctly different picosecond rise and decay times are found for a number of modes with frequencies between 860 and 1510 cm–1, including the overtone of a non-Raman active mode. A nonthermal distribution of vibrational populations exists up to about 6 ps after photoexcitation. The time-resolved experiments are complemented by steady-state infrared and Raman measurements as well as calculations based on density functional theory, providing a detailed analysis of the steady-state vibrational spectra of PNA and two of its isotopomers. A weakly Raman active vibration at about 1510 cm–1 displays the fastest rise time and a pronounced excess population and—thus—represents the main accepting mode. We suggest that an out-of-plane mode giving rise to the overtone Raman band at this frequency acts both as coupling and accepting mode in the internal conversion process. PY - 2002 DO - https://doi.org/10.1063/1.1482698 SN - 0021-9606 SN - 1089-7690 VL - 117 IS - 2 SP - 719 EP - 726 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-1637 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hempel, M. A1 - Ziegler, Mathias A1 - Tomm, J.W. A1 - Elsaesser, T. A1 - Michel, N. A1 - Krakowski, M. T1 - Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers JF - Applied physics letters N2 - Catastrophic optical damage (COD) is analyzed during single current pulse excitation of 975 nm emitting diode lasers. Power transients and thermal images are monitored during each pulse. The COD process is unambiguously related to the occurrence of a “thermal flash” of Planck’s radiation. We observe COD to ignite multiple times in subsequent pulses. Thermography allows for tracing a spatial motion of the COD site on the front facet of the devices. The time constant of power decay after the onset of COD has values from 400 to 2000 ns, i.e., an order of magnitude longer than observed for shorter-wavelength devices. KW - Semiconductor laser KW - Thermography KW - Catastrophic optical damage KW - High-power diode lasers PY - 2010 DO - https://doi.org/10.1063/1.3456388 SN - 0003-6951 SN - 1077-3118 VL - 96 IS - 251105 SP - 1 EP - 3 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-21672 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Hempel, M. A1 - Tomm, J.W. A1 - Ziegler, Mathias A1 - Elsaesser, T. A1 - Michel, N. A1 - Krakowski, M. T1 - Catastrophic optical damage at front and rear facets of diode lasers JF - Applied physics letters N2 - Single-pulse tests of the catastrophic optical damage (COD) are performed for three batches of diode lasers with different gain-regions. The tests involve in situ inspection of front, rear, and side of the devices by a thermocamera. Devices with an Al-containing gain-region show COD at the front facet, as expected for strong facet heating via surface recombination and reabsorption of laser light. In contrast, Al-free devices with low surface recombination rates tend to fail at the rear facet, pointing to a different heating scenario. The high carrier density at the rear facet favors heating and COD via Auger recombination processes. KW - Thermography KW - Catastrophic optical damage KW - High power diode lasers KW - Destructive testing KW - Non-destructive testing KW - Auger effect KW - Carrier density KW - Heating KW - Laser beam effects KW - Optical testing KW - Semiconductor lasers KW - Surface recombination PY - 2010 DO - https://doi.org/10.1063/1.3524235 SN - 0003-6951 SN - 1077-3118 VL - 97 IS - 23 SP - 231101-1 - 231101-3 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-22763 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Tomm, J.W. A1 - Ziegler, Mathias A1 - Hempel, M. A1 - Elsaesser, T. T1 - Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers JF - Laser & photonics reviews N2 - COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices. KW - Semiconductor laser KW - Thermography KW - Catastrophic optical damage KW - High-power diode lasers KW - Destructive testing KW - Non-destructive testing PY - 2011 DO - https://doi.org/10.1002/lpor.201000023 SN - 1863-8880 VL - 5 IS - 3 SP - 422 EP - 441 PB - Wiley-VCH CY - Weinheim AN - OPUS4-23624 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ziegler, Mathias A1 - Hempel, M. A1 - Larsen, H. E. A1 - Tomm, J. W. A1 - Andersen, P. E. A1 - Clausen, S. A1 - Elliott, S. N. A1 - Elsaesser, T. T1 - Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage JF - Applied physics letters N2 - The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters. KW - Semiconductor laser KW - Thermography KW - Catastrophic optical damage KW - High-power diode lasers PY - 2010 DO - https://doi.org/10.1063/1.3463039 SN - 0003-6951 SN - 1077-3118 VL - 97 IS - 021110 SP - 1 EP - 3 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-21741 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -