TY - CONF A1 - Hönig, Gerald M. O. A1 - Schlichting, S. A1 - Wagner, M. R. A1 - Müssener, J. A1 - Hill, P. A1 - Grieb, T. A1 - Teubert, J. A1 - Schörmann, J. A1 - Rosenauer, A. A1 - Eickhoff, M. A1 - Hoffmann, A. A1 - Callsen, G. T1 - QCSE tuning in polar GaN/AlN heterostructures N2 - We show both theoretically and experimentally how the encapsulation of the active region by additional guard layers can be used to achieve a significant reduction of the built-in electric fields in polar nitride heterostructures. This reduction of the QCSE results in a strongly enhanced emission intensity and faster recombination dynamics in the active region. In particular we are able to shift the emission energy of 4-nm-thick GaN nano-discs up to 3.32 eV, which is just 150 meV below the bulk GaN bandgap as compared to a red-shift of about 1 eV in a conventional heterostructure with the same thickness. T2 - SPIE. PHOTONICS WEST OPTO CY - San Francisco, CA, USA DA - 29.01.2018 KW - QCSE KW - Piezopolarization KW - Spontaneous Polarization KW - IFGARD KW - Nanoheterostructures KW - Nonpolar PY - 2018 AN - OPUS4-43383 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -