TY - CONF A1 - Hönig, Gerald M. O. A1 - Schlichting, S. A1 - Wagner, M. R. A1 - Müssener, J. A1 - Hill, P. A1 - Grieb, T. A1 - Teubert, J. A1 - Schörmann, J. A1 - Rosenauer, A. A1 - Eickhoff, M. A1 - Hoffmann, A. A1 - Callsen, G. T1 - QCSE tuning in polar GaN/AlN heterostructures N2 - We show both theoretically and experimentally how the encapsulation of the active region by additional guard layers can be used to achieve a significant reduction of the built-in electric fields in polar nitride heterostructures. This reduction of the QCSE results in a strongly enhanced emission intensity and faster recombination dynamics in the active region. In particular we are able to shift the emission energy of 4-nm-thick GaN nano-discs up to 3.32 eV, which is just 150 meV below the bulk GaN bandgap as compared to a red-shift of about 1 eV in a conventional heterostructure with the same thickness. T2 - SPIE. PHOTONICS WEST OPTO CY - San Francisco, CA, USA DA - 29.01.2018 KW - QCSE KW - Piezopolarization KW - Spontaneous Polarization KW - IFGARD KW - Nanoheterostructures KW - Nonpolar PY - 2018 AN - OPUS4-43383 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Wagner, M. R. A1 - Schlichting, S. A1 - Müßener, J. A1 - Hille, P. A1 - Teubert, J. A1 - Schörmann, J. A1 - Rosenauer, A. A1 - Eickhoff, M. A1 - Hoffmann, A. A1 - Callsen, G. A1 - Hönig, Gerald M. O. T1 - Suppression of the quantum confined Stark effect in polar III-nitride heterostructures N2 - One of the most significant limitations for the quantum efficiency of group III-nitride based light emitters is the spatial electron-hole separation due to the quantum-confined Stark effect (QCSE). To overcome this problem, Hönig et al. [1] proposed a novel concept, the Internal-Field-Guarded-Active-Region Design (IFGARD), which suppresses the QCSE for wurtzite crystals in the [0001] direction. Here, we show how encapsulating the active region by additional guard layers results in a strong reduction of the built-in electric field in c-plane wurtzite nanostructures. Even more importantly, we demonstrate the first experimental evidence for the successful realization of an IFGARD structure based on GaN/AlN heterostructures embedded in GaN nanowires. By means of power-dependent and time-resolved µ-photoluminescence (µ-PL) we experimentally proof the validity of the unconventional IFGARD structure. We managed to tune the emission of 4-nm-thick GaN nano-discs up to 3.32 eV at low excitation powers, which is just 150 meV below the bulk GaN bandgap. Our results demonstrate an almost complete elimination of the QCSE in comparison to conventional structures which show approximately 1 eV red-shifted emission. The suppression of the QCSE results in a significant increase of the radiative exciton decay rates by orders of magnitude and demonstrates the potential of IFGARD structures for future light sources based on polar heterostructures. [1] Hönig et al., Phys. Rev. Applied 7, 024004 (2017) T2 - International Conference on Nitride Semiconductors 12 of the European Materials Research Society CY - Strasbourg, France DA - 24.07.2017 KW - Nanophotonics KW - Piezoelectricity KW - Quantum confined stark effect KW - Semiconductor nanostructures KW - Spontaneous polarization PY - 2017 AN - OPUS4-41194 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -