TY - CONF A1 - Rosu, Dana Maria T1 - Optical characterization of highly inhomogeneous thin films T2 - 8th Workshop Ellipsometry CY - Dresden, Germany DA - 2014-03-10 PY - 2014 AN - OPUS4-30116 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Rosu, Dana Maria T1 - Optical characterization of non-ideal samples T2 - E-MRS 2014 SPRING MEETING CY - Lille, France DA - 2014-05-26 PY - 2014 AN - OPUS4-30117 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Rosu, Dana Maria T1 - Spektrale und Imaging-Ellipsometrie von Graphen-Proben der TUW und des IHP T2 - 6. Graphen-Meeting CY - Berlin, Germany DA - 2015-11-06 PY - 2015 AN - OPUS4-35209 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Rosu, Dana Maria T1 - Optical investigations of PCDTBT-PC70BM blends for organic photovoltaics T2 - 9th Workshop Ellipsometry CY - Enschede, the Netherlands DA - 2015-02-23 PY - 2015 AN - OPUS4-32940 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Rosu, Dana Maria T1 - Optical characterization of PCDTBT-PC70BM bulk heterojunctions T2 - EMRS 2015 Spring Meeting CY - Lille, France DA - 2015-05-11 PY - 2015 AN - OPUS4-32942 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Rosu, Dana-Maria T1 - Optical investigation of ZnO and doped ZnO thin films N2 - In the search for highly efficient, low-cost, non-toxic, transparent conductive oxides (TCOs) suitable for large area applications for photovoltaics, ZnO and ZnO-related materials have received considerable attention. In the present work, Al and Ga doped ZnO films on oxidized Si substrates are characterized using mainly variable angle spectroscopic ellipsometry; additional optical and non-optical techniques were employed to confirm and support the ellipsometric models considered. The samples were obtained by means of pulsed chemical vacuum deposition (CVD) and atomic layer deposition (ALD). As known from previous studies the presence of dopants in ZnO thin films generally induce significant changes in the optical, electrical and morphological properties. We present our findings for a series of Al and Ga doped ZnO layers with different concentrations of the dopants, discussing their influence on the optical and electrical properties. T2 - 7th International Conference on Spectroscopic Ellipsometry (ICSE-7) CY - Berlin, Germany DA - 06.06.2016 KW - doped ZnO KW - ellipsometry KW - optical properties KW - transparent conducting oxide PY - 2016 AN - OPUS4-37135 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -