TY - CONF A1 - Grundmann, Jana A1 - Ermilova, Elena A1 - Hertwig, Andreas A1 - Klapetek, Petr A1 - Pereira, Silvania F. A1 - Rafighdoost, Jila A1 - Bodermann, Bernd T1 - Optical and Tactile Measurements on SiC Sample Defects N2 - The different defect types on SiC samples are measured with various measurement methods including optical and tactile methods. The defect types investigated include particles, carrots and triangles and they are analyzed with imaging ellipsometry, coherent Fourier scatterometry and atomic force microscopy. Each of these methods measures different properties of the defects and they all together contribute to a complete analysis. T2 - SMSI 2023 - Sensor and Measurement Science International CY - Nuremberg, Germany DA - 08.05.2023 KW - Defects KW - Silicon carbide KW - Imaging ellipsometry KW - Atomic force microscopy KW - Coherent Fourier scatterometry PY - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-593397 SN - 978-3-9819376-8-8 VL - 2023/D5 SP - 233 EP - 234 PB - AMA Service CY - Wunstorf AN - OPUS4-59339 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Grundmann, Jana A1 - Bodermann, Bernd A1 - Ermilova, Elena A1 - Weise, Matthias A1 - Hertwig, Andreas A1 - Klapetek, Petr A1 - Rafighdoost, Jila A1 - Pereira, Silvania F. T1 - Optical and tactile measurements on SiC sample defects N2 - Abstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations. KW - Compound semiconductors KW - Hybrid metrology KW - Material defects KW - Spectroscopic Ellipsometry KW - Scanning Probe Microscopy KW - White-light Interference Microscopy PY - 2024 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-601220 SN - 2194-878X VL - 13 IS - 1 SP - 109 EP - 121 PB - Copernicus GmbH AN - OPUS4-60122 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -