TY - CONF A1 - Koenders, L. A1 - Hasche, K. A1 - Ulm, G. A1 - Krumrey, M. A1 - Ade, G. A1 - Stümpel, J. A1 - Busch, I. A1 - Thomsen-Schmidt, P. A1 - Schädlich, S. A1 - Schindler, A. A1 - Frank, W. A1 - Beck, Uwe A1 - Procop, Mathias T1 - Über die metrologische Charakterisierung von Schichtdicken Standards im Nanometerbereich T2 - 12th Applied Surface Analysis Workshop T2 - 12th Applied Surface Analysis Workshop ; AOFA 12 CY - --- DA - 2002-09-15 PY - 2002 AN - OPUS4-2285 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Seah, M.P. A1 - Spencer, S.J. A1 - Bensebaa, F. A1 - Vickridge, I. A1 - Danzebrink, H. A1 - Krumrey, M. A1 - Gross, Thomas A1 - Österle, Werner A1 - Wendler, E. A1 - Rheinländer, B. A1 - Azuma, Y. A1 - Kojima, I. A1 - Suzuki, N. A1 - Suzuki, M. A1 - Tanuma, S. A1 - Moon, D.W. A1 - Lee, H.J. A1 - Cho, H.M. A1 - Chen, H.Y. A1 - Wee, A. T. S. A1 - Osipowicz, T. A1 - Pan, J.S. A1 - Jordaan, W.A. A1 - Hauert, R. A1 - Klotz, U. A1 - van der Marel, C. A1 - Verheijen, M. A1 - Tamminga, Y. A1 - Jeynes, C. A1 - Bailey, P. A1 - Biswas, S. A1 - Falke, U. A1 - Nguyen, N.V. A1 - Chandler-Horowitz, D. A1 - Ehrstein, J.R. A1 - Muller, D. A1 - Dura, J.A. T1 - Ultra-thin SiO2 on Si, Part V: Results of a CCQM Pilot Study of Thickness Measurements T2 - NPL Report COAM S 14 KW - SiO2 KW - Thin films KW - Thickness KW - XPS KW - Ellipsometry KW - TEM PY - 2003 SN - 1473-2734 SP - 57 pages AN - OPUS4-4118 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Seah, M.P. A1 - Unger, Wolfgang A1 - Wang, H. A1 - Jordaan, W. A1 - Gross, Thomas A1 - Dura, J.A. A1 - Moon, D.W. A1 - Totarong, P. A1 - Krumrey, M. A1 - Hauert, R. A1 - Zhiqiang, M. T1 - Ultra-thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on Si JF - Surface and interface analysis N2 - Results from a study conducted between National Metrology Institutes (NMIs) for the measurements of the absolute thicknesses of ultra-thin layers of SiO2 on Si are reported. These results are from a key comparison and associated pilot study under the auspices of the Consultative Committee for Amount of Substance. ´Amount of substance´ may be expressed in many ways, and here the measurand is the thickness of the silicon oxide layers with nominal thicknesses in the range 1.5-8 nm on Si substrates, expressed as the thickness of SiO2. Separate samples were provided to each institute in containers that limited the carbonaceous contamination to approximately < 0.3 nm. The SiO2 samples were of ultra-thin on (100) and (111) orientated wafers of Si. The measurements from the laboratories which participated in the study were conducted using ellipsometry, neutron reflectivity, X-ray photoelectron spectroscopy or X-ray reflectivity, guided by the protocol developed in an earlier pilot study. A very minor correction was made in the different samples that each laboratory received. Where appropriate, method offset values attributed to the effects of contaminations, from the earlier pilot study, were subtracted. Values for the key comparison reference values (agreed best values from a Consultative Committee study) and their associated uncertainties for these samples are then made from the weighted means and the expanded weighted standard deviations of the means of these data. These results show a dramatic improvement on previous comparisons, leading to 95% uncertainties in the range 0.09-0.27 nm, equivalent to 0.4-1.0 monolayers over the 1.5-8.0 nm nominal thickness range studied. If the sample-to-sample uncertainty is reduced from its maximum estimate to the most likely value, these uncertainties reduce to 0.05-0.25 nm or ~1.4% relative standard uncertainties. The best results achieve ~1% relative standard uncertainty. It is concluded that XPS has now been made fully traceable to the SI, for ultra-thin thermal SiO2 on Si layers, by calibration using wavelength methods in an approach that may be extended to other material systems. KW - Attenuation length KW - Calibration KW - Silicon dioxide KW - Thickness KW - Ultra-thin oxide PY - 2009 DO - https://doi.org/10.1002/sia.3045 SN - 0142-2421 SN - 1096-9918 VL - 41 IS - 5 SP - 430 EP - 439 PB - Wiley CY - Chichester AN - OPUS4-19246 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kim, K.J. A1 - Kim, C.S. A1 - Ruh, S. W. A1 - Unger, Wolfgang A1 - Radnik, Jörg A1 - Mata-Salazar, J. A1 - Juarez-Garcia, J.M. A1 - Cortazar-Martinez, O. A1 - Herrera-Gomez, A. A1 - Hansen, P.E. A1 - Madesen, J.S. A1 - Senna, C.A. A1 - Archanjo, B.S. A1 - Damasceno, J.C. A1 - Achete, C.A. A1 - Wang, H. A1 - Wang, M. A1 - Windover, D. A1 - Steel, E. A1 - Kurokawa, A. A1 - Fujimoto, T. A1 - Azuma, Y. A1 - Terauchi, S. A1 - Zhang, L. A1 - Jordaan, W.A. A1 - Spencer, S.J. A1 - Shard, A.G. A1 - Koenders, L. A1 - Krumrey, M. A1 - Busch, I. A1 - Jeynes, C. T1 - Thickness measurement of nm HfO2 films JF - Metrologia N2 - A pilot study for the thickness measurement of HfO2 films was performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of this pilot study was to ensure the equivalency in the measurement capability of national metrology institutes for the thickness measurement of HfO2 films. In this pilot study, the thicknesses of six HfO2 films with nominal thickness from 1 nm to 4 nm were measured by X-ray Photoelectron Spectroscopy (XPS), X-ray Reflectometry(XRR), X-ray Fluorescence Analysis (XRF), Transmission Electron Spectroscopy (TEM), Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS). The reference thicknesses were determined by mutual calibration of a zero-offset method (Medium Energy Ion Scattering Spectroscopy (MEIS) of KRISS) and a method traceable to the length unit (the average thicknesses of three XRR data except the thinnest film). These reference thicknesses are traceable to the length unit because they are based on the traceability of XRR. For the thickness measurement by XPS, the effective attenuation length of Hf 4f electrons was determined. In the cases of XRR and TEM, the offset values were determined from a linear fitting between the reference thicknesses and the individual data by XRR and TEM. The amount of substance of HfO2, expressed as thickness of HfO2 films (in both linear and areal density units), was found to be a good subject for a CCQM key comparison. To reach the main text of this paper, click on Final Report. The final report has been peer-reviewed and approved for publication by the CCQM. KW - Thickness measurements KW - nm films KW - X-ray Photoelectron Spectroscopy KW - Mutual calibration PY - 2021 DO - https://doi.org/10.1088/0026-1394/58/1A/08016 SN - 0026-1394 VL - 58 IS - 1a SP - 08016 PB - IOP Publishing Lt. CY - Bristol AN - OPUS4-54175 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Görner, Wolf A1 - Hentschel, Manfred P. A1 - Müller, Bernd R. A1 - Riesemeier, Heinrich A1 - Krumrey, M. A1 - Ulm, G. T1 - The first hard X-rays at the BAMline T2 - BESSY annual report 2000 PY - 2001 UR - http://www.helmholtz-berlin.de/media/media/oea/web/pr_webseite/druckschriften/berichte/bessy/annualreport2000.pdf#page=329 SN - 0179-4159 SP - 329 EP - 331 PB - Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung CY - Berlin AN - OPUS4-1299 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Deumer, J. A1 - Pauw, Brian Richard A1 - Marguet, S. A1 - Skroblin, D. A1 - Taché, O. A1 - Krumrey, M. A1 - Gollwitzer, C. T1 - Small-angle X-ray scattering: characterization of cubic Au nanoparticles using Debye’s scattering formula JF - Journal of Applied Crystallography N2 - A versatile software package in the form of a Python extension, named CDEF (computing Debye’s scattering formula for extraordinary form factors), is proposed to calculate approximate scattering profiles of arbitrarily shaped nanoparticles for small-angle X-ray scattering (SAXS). CDEF generates a quasi-randomly distributed point cloud in the desired particle shape and then applies the open-source software DEBYER for efficient evaluation of Debye’s scattering formula to calculate the SAXS pattern (https://github.com/j-from-b/CDEF). If self-correlation of the scattering signal is not omitted, the quasi-random distribution provides faster convergence compared with a true-random distribution of the scatterers, especially at higher momentum transfer. The usage of the software is demonstrated for the evaluation of scattering data of Au nanocubes with rounded edges, which were measured at the four-crystal monochromator beamline of PTB at the synchrotron radiation facility BESSY II in Berlin. The implementation is fast enough to run on a single desktop computer and perform model fits within minutes. The accuracy of the method was analyzed by comparison with analytically known form factors and verified with another implementation, the SPONGE, based on a similar principle with fewer approximations. Additionally, the SPONGE coupled to McSAS3 allows one to retrieve information on the uncertainty of the size distribution using a Monte Carlo uncertainty estimation algorithm. KW - X-ray scattering KW - SAXS KW - Non-spherical nanoparticles KW - Nanoparticles KW - Nanomaterials KW - Debye scattering equation KW - Simulation KW - Data fitting PY - 2022 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-557652 DO - https://doi.org/10.1107/S160057672200499X VL - 55 IS - Pt 4 SP - 993 EP - 1001 PB - International Union of Crystallography CY - Chester, England AN - OPUS4-55765 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Roebben, G. A1 - Kestens, V. A1 - Varga, Z. A1 - Charoud-Got, J. A1 - Ramaye, Y. A1 - Gollwitzer, Christian A1 - Bartczak, D. A1 - Geißler, Daniel A1 - Noble, J.E. A1 - Mazoua, S. A1 - Meeus, N. A1 - Corbisier, P. A1 - Palmai, M. A1 - Mihály, J. A1 - Krumrey, M. A1 - Davies, J. A1 - Resch-Genger, Ute A1 - Kumarswami, N. A1 - Minelli, C. A1 - Sikora, A. A1 - Goenaga-Infante, H. T1 - Reference materials and representative test materials to develop nanoparticle characterization methods: the NanoChOp project case JF - Frontiers in Chemistry N2 - This paper describes the production and characteristics of the nanoparticle test materials prepared for common use in the collaborative research project NanoChOp (Chemical and optical characterization of nanomaterials in biological systems), in casu suspensions of silica nanoparticles and CdSe/CdS/ZnS quantum dots (QDs). This paper is the first to illustrate how to assess whether nanoparticle test materials meet the requirements of a "reference material" (ISO Guide 30, 2015) or rather those of the recently defined category of "representative test material (RTM)" (ISO/TS 16195, 2013). The NanoChOp test materials were investigated with small-angle X-ray scattering (SAXS), dynamic light scattering (DLS), and centrifugal liquid sedimentation (CLS) to establish whether they complied with the required monomodal particle size distribution. The presence of impurities, aggregates, agglomerates, and viable microorganisms in the suspensions was investigated with DLS, CLS, optical and electron microscopy and via plating on nutrient agar. Suitability of surface functionalization was investigated with attenuated total reflection Fourier transform infrared spectrometry (ATR-FTIR) and via the capacity of the nanoparticles to be fluorescently labeled or to bind antibodies. Between-unit homogeneity and stability were investigated in terms of particle size and zeta potential. This paper shows that only based on the outcome of a detailed characterization process one can raise the status of a test material to RTM or reference material, and how this status depends on its intended use. KW - Nanoparticle KW - Materials characterization KW - Reference material KW - Analytical quality assurance KW - Metrology PY - 2015 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-349644 DO - https://doi.org/10.3389/fchem.2015.00056 SN - 2296-2646 VL - 3 SP - Article 56, 1 EP - 16 PB - Frontiers Media CY - Lausanne AN - OPUS4-34964 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Thomsen-Schmidt, P. A1 - Hasche, K. A1 - Ulm, G. A1 - Herrmann, K. A1 - Krumrey, M. A1 - Ade, G. A1 - Stümpel, J. A1 - Procop, Mathias A1 - Beck, Uwe T1 - Realisation and metrological characterisation of thickness standards below 100 nm T2 - Tagungsband der DVG Jahrestagung 2002 T2 - DVG Jahrestagung 2002 CY - Magdeburg, Germany DA - 2002-06-17 PY - 2002 SP - 1 EP - 9 PB - Deutsche Vakuum-Gesellschaft CY - Kaiserslautern AN - OPUS4-1936 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Thomsen-Schmidt, P. A1 - Hasche, K. A1 - Ulm, G. A1 - Herrmann, K. A1 - Krumrey, M. A1 - Ade, G. A1 - Stümpel, J. A1 - Busch, I. A1 - Schädlich, S. A1 - Schindler, A. A1 - Frank, W. A1 - Hirsch, D. A1 - Procop, Mathias A1 - Beck, Uwe T1 - Realisation and metrological characterisation of thickness standards below 100 nm JF - Applied physics A N2 - High-accuracy film thickness measurements in the range below 100 nm can be made by various complex methods like spectral ellipsometry (SE), scanning force microscopy (SFM), grazing incidence X-ray reflectometry (GIXR), or X-ray fluorescence analysis (XRF). The measurement results achieved with these methods are based on different interactions between the film and the probe. A key question in nanotechnology is how to achieve consistent results on a level of uncertainty below one nanometre with different techniques. Two different types of thickness standards are realised. Metal film standards for X-ray techniques in the thickness range 10 to 50 nm are calibrated by GIXR with monochromatised synchrotron radiation of 8048 eV. The results obtained at four different facilities show excellent agreement. SiO2 on Si standards for SE and SFM in the thickness range 6 to 1000 nm are calibrated by GIXR with monochromatised synchrotron radiation of 1841 eV and with a metrological SFM. Consistent results within the combined uncertainties are obtained with the two methods. Surfaces and interfaces of both types of standards are additionally investigated by transmission electron microscopy (TEM). PY - 2004 DO - https://doi.org/10.1007/s00339-003-2273-7 SN - 0947-8396 VL - 78 IS - 5 SP - 645 EP - 649 PB - Springer CY - Berlin AN - OPUS4-17195 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rackwitz, Vanessa A1 - Krumrey, M. A1 - Laubis, C. A1 - Scholze, F. A1 - Hodoroaba, Vasile-Dan T1 - New reference and test materials for the characterization of energy dispersive X-ray spectrometers at scanning electron microscopes JF - Analytical and bioanalytical chemistry N2 - Checking the performance of energy dispersive X-ray spectrometers as well as validation of the results obtained with energy dispersive X-ray spectrometry (EDX) at a scanning electron microscope (SEM) involve the use of (certified) reference and dedicated test materials. This paper gives an overview on the test materials mostly employed by SEM/EDX users and accredited laboratories as well as on those recommended in international standards. The new BAM reference material EDS-CRM, which is currently in the process of certification, is specifically designed for the characterization of EDS systems at a SEM through calibration of the spectrometer efficiency in analytical laboratories in a simple manner. The certification of the spectra by means of a reference EDS is described. The focus is on the traceability of EDS efficiency which is ensured by measurements of the absolute detection efficiency of silicon drift detectors (SDD) and Si(Li) detectors at the laboratory of the PTB using the electron storage ring BESSY II as a primary X-ray source standard. A new test material in development at BAM for testing the performance of an EDS in the energy range below 1 keV is also briefly presented. KW - EDX KW - EDS KW - Performance check KW - SEM KW - Test materials KW - Spectrometer efficiency PY - 2015 DO - https://doi.org/10.1007/s00216-014-8242-5 SN - 1618-2642 SN - 1618-2650 VL - 407 IS - 11 SP - 3045 EP - 3053 PB - Springer CY - Berlin AN - OPUS4-33025 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -