TY - JOUR A1 - Seah, M.P. A1 - Spencer, S.J. A1 - Bensebaa, F. A1 - Vickridge, I. A1 - Danzebrink, H. A1 - Krumrey, M. A1 - Gross, Thomas A1 - Österle, Werner A1 - Wendler, E. A1 - Rheinländer, B. A1 - Azuma, Y. A1 - Kojima, I. A1 - Suzuki, N. A1 - Suzuki, M. A1 - Tanuma, S. A1 - Moon, D.W. A1 - Lee, H.J. A1 - Cho, H.M. A1 - Chen, H.Y. A1 - Wee, A. T. S. A1 - Osipowicz, T. A1 - Pan, J.S. A1 - Jordaan, W.A. A1 - Hauert, R. A1 - Klotz, U. A1 - van der Marel, C. A1 - Verheijen, M. A1 - Tamminga, Y. A1 - Jeynes, C. A1 - Bailey, P. A1 - Biswas, S. A1 - Falke, U. A1 - Nguyen, N.V. A1 - Chandler-Horowitz, D. A1 - Ehrstein, J.R. A1 - Muller, D. A1 - Dura, J.A. T1 - Critical review of the current status of thickness measurements for ultrathin SiO2 on Si - Part V: Results of a CCQM pilot study N2 - Results are reported from a pilot study under the Consultative Committee for Amount of Substance (CCQM) to compare measurements of and resolve any relevant measurement issues in, the amount of thermal SiO2 oxide on (100) and (111) orientation Si wafer substrates in the thickness range 1.5 - 8 nm. As a result of the invitation to participate in this activity, 45 sets of measurements have been made in different laboratories using 10 analytical methods: medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), XPS, SIMS, ellipsometry, grazing-incidence x-ray reflectrometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM). The measurements are made on separate sets of 10 carefully prepared samples, all of which have been characterised by a combination of ellipsometry and XPS using carefully established reference conditions and reference parameters. The results have been assessed against the National Physical Laboratory (NPL) data and all show excellent linearity. The remaining data sets correlate with the NPL data with average root-mean-square scatters of 0.15 nm, half being better than 0.1 nm and a few at or better than 0.05 nm. Each set of data allows a relative scaling constant and a zero thickness offset to be determined. Each method has an inherent zero thickness offset between 0 nm and 1 nm and it is these offsets, measured here for the first time, that have caused many problems in the past. There are three basic classes of offset: water and carbonadeous contamination equivalent to ~1 nm as seen by ellipsometry; adsorbed oxygen mainly from water at an equivalent thickness of 0.5 nm as seen by MEIS, NRA, RBS and possibly GIXRR; and no offset as seen by XPS using the Si 2p peaks. Each technique has a different uncertainty for the scaling constant and consistent results have been achieved. X-Ray photoelectron spectroscopy has large uncertainties for the scaling constant but a high precision and, critically, if used correctly, has zero offset. Thus, a combination of XPS and the other methods allows the XPS scaling constant to be determined with low uncertainty, traceable via the other methods. XPS laboratories returning results early were invited to test a new reference procedure. All showed very significant improvements. The reference attenuation lengths thus need scaling by 0.986 ± 0.009 (at an expansion factor of 2) deduced from the data for the other methods. Several other methods have small offsets and, to the extent that these can be shown to be constant or measurable, then these methods will also show low uncertainty. Recommendations are provided for parameters for XPS, MEIS, RBS and NRA to improve their accuracy. KW - Calibration KW - Ellipsometry KW - GIXRR KW - Interlaboratory study KW - MEIS KW - Neutron reflectometry KW - NRA KW - RBS KW - Silicon dioxide KW - SIMS KW - XPS PY - 2004 U6 - https://doi.org/10.1002/sia.1909 SN - 0142-2421 SN - 1096-9918 VL - 36 IS - 9 SP - 1269 EP - 1303 PB - Wiley CY - Chichester AN - OPUS4-5549 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Seah, M.P. A1 - Spencer, S.J. A1 - Bensebaa, F. A1 - Vickridge, I. A1 - Danzebrink, H. A1 - Krumrey, M. A1 - Gross, Thomas A1 - Österle, Werner A1 - Wendler, E. A1 - Rheinländer, B. A1 - Azuma, Y. A1 - Kojima, I. A1 - Suzuki, N. A1 - Suzuki, M. A1 - Tanuma, S. A1 - Moon, D.W. A1 - Lee, H.J. A1 - Cho, H.M. A1 - Chen, H.Y. A1 - Wee, A. T. S. A1 - Osipowicz, T. A1 - Pan, J.S. A1 - Jordaan, W.A. A1 - Hauert, R. A1 - Klotz, U. A1 - van der Marel, C. A1 - Verheijen, M. A1 - Tamminga, Y. A1 - Jeynes, C. A1 - Bailey, P. A1 - Biswas, S. A1 - Falke, U. A1 - Nguyen, N.V. A1 - Chandler-Horowitz, D. A1 - Ehrstein, J.R. A1 - Muller, D. A1 - Dura, J.A. T1 - Ultra-thin SiO2 on Si, Part V: Results of a CCQM Pilot Study of Thickness Measurements KW - SiO2 KW - Thin films KW - Thickness KW - XPS KW - Ellipsometry KW - TEM PY - 2003 SN - 1473-2734 SP - 57 pages AN - OPUS4-4118 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Göbel, E. O. A1 - Hasche, K. A1 - Ulm, G. A1 - Krumrey, M. A1 - Ade, G. A1 - Stümpel, J. A1 - Herrmann, K. A1 - Koenders, L. A1 - Thomsen-Schmidt, P. A1 - Pohlenz, F. A1 - Xu, M. A1 - Dai, G. A1 - Hoffmann, K.-P. A1 - Busch, I. A1 - Frank, W. A1 - Procop, M. A1 - Beck, Uwe T1 - Kalibrierte Schichtdicken-Maßverkörperungen für Nanometerschichten, Teilvorhaben - Kalibrierung von Schichtdicken-Maßverkörperungen im Nanometerbereich - Abschlussbericht des BMBF Verbundvorhabens 13N7704 - 13N77041 KW - Schichtdicke KW - Nanometerbereich PY - 2003 UR - http://edok01.tib.uni-hannover.de/edoks/e01fb02/373214030.pdf SP - 1 EP - 131 PB - Physikalisch-Technische Bundesanstalt CY - Dresden AN - OPUS4-25428 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Seah, M.P. A1 - Unger, Wolfgang A1 - Wang, H. A1 - Jordaan, W. A1 - Gross, Thomas A1 - Dura, J.A. A1 - Moon, D.W. A1 - Totarong, P. A1 - Krumrey, M. A1 - Hauert, R. A1 - Zhiqiang, M. T1 - Ultra-thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on Si N2 - Results from a study conducted between National Metrology Institutes (NMIs) for the measurements of the absolute thicknesses of ultra-thin layers of SiO2 on Si are reported. These results are from a key comparison and associated pilot study under the auspices of the Consultative Committee for Amount of Substance. ´Amount of substance´ may be expressed in many ways, and here the measurand is the thickness of the silicon oxide layers with nominal thicknesses in the range 1.5-8 nm on Si substrates, expressed as the thickness of SiO2. Separate samples were provided to each institute in containers that limited the carbonaceous contamination to approximately < 0.3 nm. The SiO2 samples were of ultra-thin on (100) and (111) orientated wafers of Si. The measurements from the laboratories which participated in the study were conducted using ellipsometry, neutron reflectivity, X-ray photoelectron spectroscopy or X-ray reflectivity, guided by the protocol developed in an earlier pilot study. A very minor correction was made in the different samples that each laboratory received. Where appropriate, method offset values attributed to the effects of contaminations, from the earlier pilot study, were subtracted. Values for the key comparison reference values (agreed best values from a Consultative Committee study) and their associated uncertainties for these samples are then made from the weighted means and the expanded weighted standard deviations of the means of these data. These results show a dramatic improvement on previous comparisons, leading to 95% uncertainties in the range 0.09-0.27 nm, equivalent to 0.4-1.0 monolayers over the 1.5-8.0 nm nominal thickness range studied. If the sample-to-sample uncertainty is reduced from its maximum estimate to the most likely value, these uncertainties reduce to 0.05-0.25 nm or ~1.4% relative standard uncertainties. The best results achieve ~1% relative standard uncertainty. It is concluded that XPS has now been made fully traceable to the SI, for ultra-thin thermal SiO2 on Si layers, by calibration using wavelength methods in an approach that may be extended to other material systems. KW - Attenuation length KW - Calibration KW - Silicon dioxide KW - Thickness KW - Ultra-thin oxide PY - 2009 U6 - https://doi.org/10.1002/sia.3045 SN - 0142-2421 SN - 1096-9918 VL - 41 IS - 5 SP - 430 EP - 439 PB - Wiley CY - Chichester AN - OPUS4-19246 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Kim, K.J. A1 - Kim, C.S. A1 - Ruh, S. W. A1 - Unger, Wolfgang A1 - Radnik, Jörg A1 - Mata-Salazar, J. A1 - Juarez-Garcia, J.M. A1 - Cortazar-Martinez, O. A1 - Herrera-Gomez, A. A1 - Hansen, P.E. A1 - Madesen, J.S. A1 - Senna, C.A. A1 - Archanjo, B.S. A1 - Damasceno, J.C. A1 - Achete, C.A. A1 - Wang, H. A1 - Wang, M. A1 - Windover, D. A1 - Steel, E. A1 - Kurokawa, A. A1 - Fujimoto, T. A1 - Azuma, Y. A1 - Terauchi, S. A1 - Zhang, L. A1 - Jordaan, W.A. A1 - Spencer, S.J. A1 - Shard, A.G. A1 - Koenders, L. A1 - Krumrey, M. A1 - Busch, I. A1 - Jeynes, C. T1 - Thickness measurement of nm HfO2 films N2 - A pilot study for the thickness measurement of HfO2 films was performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of this pilot study was to ensure the equivalency in the measurement capability of national metrology institutes for the thickness measurement of HfO2 films. In this pilot study, the thicknesses of six HfO2 films with nominal thickness from 1 nm to 4 nm were measured by X-ray Photoelectron Spectroscopy (XPS), X-ray Reflectometry(XRR), X-ray Fluorescence Analysis (XRF), Transmission Electron Spectroscopy (TEM), Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS). The reference thicknesses were determined by mutual calibration of a zero-offset method (Medium Energy Ion Scattering Spectroscopy (MEIS) of KRISS) and a method traceable to the length unit (the average thicknesses of three XRR data except the thinnest film). These reference thicknesses are traceable to the length unit because they are based on the traceability of XRR. For the thickness measurement by XPS, the effective attenuation length of Hf 4f electrons was determined. In the cases of XRR and TEM, the offset values were determined from a linear fitting between the reference thicknesses and the individual data by XRR and TEM. The amount of substance of HfO2, expressed as thickness of HfO2 films (in both linear and areal density units), was found to be a good subject for a CCQM key comparison. To reach the main text of this paper, click on Final Report. The final report has been peer-reviewed and approved for publication by the CCQM. KW - Thickness measurements KW - nm films KW - X-ray Photoelectron Spectroscopy KW - Mutual calibration PY - 2021 U6 - https://doi.org/10.1088/0026-1394/58/1A/08016 SN - 0026-1394 VL - 58 IS - 1a SP - 08016 PB - IOP Publishing Lt. CY - Bristol AN - OPUS4-54175 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Roebben, G. A1 - Kestens, V. A1 - Varga, Z. A1 - Charoud-Got, J. A1 - Ramaye, Y. A1 - Gollwitzer, Christian A1 - Bartczak, D. A1 - Geißler, Daniel A1 - Noble, J.E. A1 - Mazoua, S. A1 - Meeus, N. A1 - Corbisier, P. A1 - Palmai, M. A1 - Mihály, J. A1 - Krumrey, M. A1 - Davies, J. A1 - Resch-Genger, Ute A1 - Kumarswami, N. A1 - Minelli, C. A1 - Sikora, A. A1 - Goenaga-Infante, H. T1 - Reference materials and representative test materials to develop nanoparticle characterization methods: the NanoChOp project case N2 - This paper describes the production and characteristics of the nanoparticle test materials prepared for common use in the collaborative research project NanoChOp (Chemical and optical characterization of nanomaterials in biological systems), in casu suspensions of silica nanoparticles and CdSe/CdS/ZnS quantum dots (QDs). This paper is the first to illustrate how to assess whether nanoparticle test materials meet the requirements of a "reference material" (ISO Guide 30, 2015) or rather those of the recently defined category of "representative test material (RTM)" (ISO/TS 16195, 2013). The NanoChOp test materials were investigated with small-angle X-ray scattering (SAXS), dynamic light scattering (DLS), and centrifugal liquid sedimentation (CLS) to establish whether they complied with the required monomodal particle size distribution. The presence of impurities, aggregates, agglomerates, and viable microorganisms in the suspensions was investigated with DLS, CLS, optical and electron microscopy and via plating on nutrient agar. Suitability of surface functionalization was investigated with attenuated total reflection Fourier transform infrared spectrometry (ATR-FTIR) and via the capacity of the nanoparticles to be fluorescently labeled or to bind antibodies. Between-unit homogeneity and stability were investigated in terms of particle size and zeta potential. This paper shows that only based on the outcome of a detailed characterization process one can raise the status of a test material to RTM or reference material, and how this status depends on its intended use. KW - Nanoparticle KW - Materials characterization KW - Reference material KW - Analytical quality assurance KW - Metrology PY - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:b43-349644 SN - 2296-2646 VL - 3 SP - Article 56, 1 EP - 16 PB - Frontiers Media CY - Lausanne AN - OPUS4-34964 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Görner, Wolf A1 - Hentschel, Manfred P. A1 - Müller, Bernd R. A1 - Riesemeier, Heinrich A1 - Krumrey, M. A1 - Ulm, G. T1 - The first hard X-rays at the BAMline PY - 2001 UR - http://www.helmholtz-berlin.de/media/media/oea/web/pr_webseite/druckschriften/berichte/bessy/annualreport2000.pdf#page=329 SN - 0179-4159 SP - 329 EP - 331 PB - Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung CY - Berlin AN - OPUS4-1299 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Hasche, K. A1 - Ulm, G. A1 - Herrmann, K. A1 - Krumrey, M. A1 - Ade, G. A1 - Sümpel, J. A1 - Busch, I. A1 - Thomsen-Schmidt, P. A1 - Schädlich, S. A1 - Schindler, A. A1 - Frank, W. A1 - Procop, Mathias A1 - Beck, Uwe T1 - About the calibration of thickness standards on the nanometer scale T2 - 3rd International EUSPEN conference ; 3rd International conference. European Society for Precision Engineering and Nanotechnology ; 4th General meeting. European Society for Precision Engineering and Nanotechnology CY - Eindhoven, The Netherlands DA - 2002-05-26 PY - 2002 SN - 90-386-2883-8 SP - 1 EP - 5 CY - Eindhoven AN - OPUS4-2283 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hasche, K. A1 - Herrmann, K. A1 - Thomsen-Schmidt, P. A1 - Krumrey, M. A1 - Ulm, G. A1 - Ade, G. A1 - Pohlenz, F. A1 - Stümpel, J. A1 - Busch, I. A1 - Schädlich, S. A1 - Frank, W. A1 - Hirsch, D. A1 - Schindler, A. A1 - Procop, Mathias A1 - Beck, Uwe T1 - Ein Beitrag zu kalibrierten Nanometerschichten für unterschiedliche Anwendungsbereiche N2 - Nanotechnologien werden gegenwärtig als leistungsfähige Oberflächentechniken in erheblichem Umfange industriell genutzt. Dabei spielen dünne Schichten und deren Kenndaten eine wesentliche Rolle, z.B. als Röntgenspiegel oder optische und magnetooptische Datenträger. Die Schichtdicke zählt hierbei zu den technologisch wichtigen Parametern. Abgeleitet von Anwenderinteressen, werden für die Röntgenreflektometrie (XRR bzw. GIXR), Elektronenstrahl-Mikroanalyse (EPMA) und Röntgenfluoreszenzanalyse (XRF) einerseits und die Ellipsometrie andererseits zugeschnittene Schichtdickenmaßverkörperungen (SDM) entwickelt, gefertigt und untersucht. Das Ziel ist die Bereitstellung praxistauglicher, kalibrierter SDM, im weiteren Schichtdickennormale (SDN) genannt. SDN sind Maßverkörperungen, für die der Schichtdickenwert mit einer definierten Messunsicherheit bekannt und auf ein metrologisch anerkanntes Längennormal zurückgeführt ist. Berichtet wird über die Herstellung und messtechnische Charakterisierung der beiden spezifischen Varianten von Maßverkörperungen. T2 - 47. Internationales Wissenschaftliches Kolloquium. Technische Universität Ilmenau ; Herbstkonferenz der Gesellschaft für Arbeitswissenschaft ; 6. Workshop Multimedia für Bildung und Wirtschaft CY - Ilmenau, Deutschland DA - 2002-09-23 PY - 2002 UR - http://publica.fraunhofer.de/documents/N-14872.html VL - 47 SP - 568 EP - 569 PB - Techn. Univ. CY - Ilmenau AN - OPUS4-2284 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Koenders, L. A1 - Hasche, K. A1 - Ulm, G. A1 - Krumrey, M. A1 - Ade, G. A1 - Stümpel, J. A1 - Busch, I. A1 - Thomsen-Schmidt, P. A1 - Schädlich, S. A1 - Schindler, A. A1 - Frank, W. A1 - Beck, Uwe A1 - Procop, Mathias T1 - Über die metrologische Charakterisierung von Schichtdicken Standards im Nanometerbereich T2 - 12th Applied Surface Analysis Workshop ; AOFA 12 CY - --- DA - 2002-09-15 PY - 2002 AN - OPUS4-2285 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -