TY - JOUR A1 - Bruna, F. G. A1 - Prokop, M. A1 - Bystron, T. A1 - Loukrakpam, R. A1 - Melke, J. A1 - Lobo, C. M. S. A1 - Fink, M. A1 - Zhu, M. A1 - Voloshina, E. A1 - Kutter, M. A1 - Hoffmann, H. A1 - Yusenko, Kirill A1 - de Oliveira Guilherme Buzanich, Ana A1 - Röder, B. A1 - Bouzek, K. A1 - Paulus, B. A1 - Roth, C. T1 - Following adsorbed intermediates on a platinum gas diffusion electrode in H3PO3‑containing electrolytes using in situ X‑ray absorption spectroscopy N2 - One of the challenges of high-temperature polymer electrolyte membrane fuel cells is the poisoning of the Pt catalyst with H3PO4. H3PO4 is imbibed into the routinely used polybenzimidazole-based membranes, which facilitate proton conductivity in the temperature range of 120−200 °C. However, when leached out of the membrane by water produced during operation, H3PO4 adsorbs on the Pt catalyst surface, blocking the active sites and hindering the oxygen reduction reaction (ORR). The reduction of H3PO4 to H3PO3, which occurs at the anode due to a combination of a low potential and the presence of gaseous H2, has been investigated as an additional important contributing factor to the observed poisoning effect. H3PO3 has an affinity toward adsorption on Pt surfaces even greater than that of H2PO4 −. In this work, we investigated the poisoning effect of both H3PO3 and H3PO4 using a half-cell setup with a gas diffusion electrode under ambient conditions. By means of in situ X-ray absorption spectroscopy, it was possible to follow the signature of different species adsorbed on the Pt nanoparticle catalyst (H, O, H2PO4 −, and H3PO3) at different potentials under ORR conditions in various electrolytes (HClO4, H3PO4, and H3PO3). It was found that H3PO3 adsorbs in a pyramidal configuration P(OH)3 through a Pt−P bond. The competition between H3PO4 and H3PO3 adsorption was studied, which should allow for a better understanding of the catalyst poisoning mechanism and thus assist in the development of strategies to mitigate this phenomenon in the future by minimizing H3PO3 generation by, for example, improved catalyst design or adapted operation conditions or changes in the electrolyte composition. KW - H3PO4 life cycle KW - XAS KW - In situ coupling KW - High-temperature fuel cells KW - Δμ XANES KW - H3PO3 PY - 2022 DO - https://doi.org/10.1021/acscatal.2c02630 SN - 2155-5435 VL - 12 IS - 18 SP - 11472 EP - 11484 PB - ACS CY - Washington, DC AN - OPUS4-55815 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Dirnstorfer, I. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. A1 - Stegemann, B. T1 - P1, P2 and P3 structuring of CIGSe solar cells with a single laser wavelength N2 - Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Nanosecond pulses KW - Ablation KW - Cu(InGa)Se2 KW - Electrical properties PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3AV.1.35 SP - 2540 EP - 2543 AN - OPUS4-24998 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Stegemann, B. A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. ED - Luschtinetz, T. ED - Lehmann, J. T1 - Neuartige Laserstrukturierung von CIGSe-Dünnschicht-Solarzellen N2 - Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe- Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht. N2 - A major advantage of thin film photovoltaics over wafer-based photovoltaics is the monolithic series connection. Manufacturing of chalcopyrite (CIGSe) thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated simply by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced direct ablation. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection between the front and back contact. T2 - 18. Symposium "Nutzung regenerativer Energiequellen und Wasserstofftechnik" / VDI-Tagung "Energieland Mecklenburg-Vorpommern" CY - Stralsund, Germany DA - 03.11.2011 KW - Photovoltaik KW - Dünnschichtsolarzellen KW - Chalkopyrite KW - Laserstrukturierung PY - 2011 SN - 978-3-9813334-4-2 SP - 204 EP - 210 AN - OPUS4-24999 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Stelmaszczyk, K. A1 - Bonse, Jörn A1 - Witteck, R. A1 - Weizman, M. A1 - Rhein, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Film side laser patterning of molybdenum thin films sputter-deposited onto glass N2 - Serial interconnection of CIGSe thin film solar modules involves typically glass-side laser patterning of the molybdenum layer (P1 scribe). In this paper we present a working principle of P1 film side patterning. The investigated samples were sputter-deposited onto soda-lime glass substrates. For understanding the fundamental ablation behavior, two kinds of layer systems were studied: on the one hand monolayer systems which are compressively stressed and on the other hand bilayer systems, consisting of a tensile stressed layer on the substrate and a second layer on top. The film-side ablation process was studied using a nanosecond as well as a picosecond laser source. The influence of intrinsic stress was studied by XRD. Time resolved spectroscopy reveals the formation of plasma as important driving mechanism for ablation. It is shown that by proper adaption of the sputter conditions high-quality P1 film side patterning is achieved. T2 - 27th European photovoltaic solar energy conference and exhibition CY - Frankfurt, Germany DA - 24.09.2012 KW - Laser processing KW - Molybdenum KW - Strain KW - Ablation KW - Sputter deposition KW - Cu(InGa)Se2 PY - 2012 SN - 3-936338-28-0 DO - https://doi.org/10.4229/27thEUPVSEC2012-3CV.1.6 SP - 2266 EP - 2272 AN - OPUS4-27208 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Fink, Friedrich A1 - Stawski, Tomasz M. A1 - Stockmann, Jörg M. A1 - Emmerling, Franziska A1 - Falkenhagen, Jana T1 - Surface Modification of Kraft Lignin by Mechanochemical Processing with Sodium Percarbonate N2 - In this article, we present a novel one-pot mechanochemical reaction for the surface activation of lignin. The process involves environmentally friendly oxidation with hydrogen peroxide, depolymerization of fractions with high molecular mass, and introduction of new carbonyl functions into the lignin backbone. Kraft lignin was ground with sodium percarbonate and sodium hydroxide in a ball mill at different time intervals. Analyses by infrared spectroscopy (IR), nuclear magnetic resonance spectroscopy (NMR), size exclusion chromatography (SEC), dynamic vapor sorption (DVS), and small-angle X-ray scattering (SAXS) showed significant improvements. After only 5 min of reaction, there was a 47% reduction in mass-average molecular weight and an increase in carboxyl functionalities. Chemical activation resulted in an approximately 2.8-fold increase in water adsorption. Principal component analysis (PCA) provided further insight into the correlations between IR spectra and SAXS parameters KW - Kraft Lignin KW - Mechanochemical oxidation KW - SEC KW - FTIR KW - SAXS KW - PCA PY - 2023 DO - https://doi.org/10.1021/acs.biomac.3c00584 SN - 1525-7797 SP - 1 EP - 11 PB - American Chemical Society AN - OPUS4-58074 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Stegemann, B. A1 - Richter, M. A1 - Schultz, C. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Quaschning, V. A1 - Fink, F. T1 - One wavelength fits all N2 - Structuring of Thin-film Solar Cells with a Single Laser Wavelength Structuring of a PV module into a number of cells is necessary to lower the current and to increase the voltage, and is typically accomplished with nanosecond laser pulses of different wavelengths. Duetothe many available laser sources, complex and expensive scribing Setups are necessary. To overcome this a concept for laser structuring of thin-film PV modules using a single wavelength allows prediction ofthe ablation behaviourfor a given laser pulse energy. KW - Thin-film solar cells KW - Nanosecond laser ablation KW - 532 nm wavelength KW - Laser scribing KW - Damage threshold PY - 2011 SN - 1869-8913 VL - 2 IS - 6 SP - 46 EP - 48 PB - Hüthig CY - Heidelberg AN - OPUS4-24158 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Vila-Comamala, J. A1 - Jefimovs, K. A1 - Raabe, J. A1 - Pilvi, T. A1 - Fink, R.H. A1 - Senoner, Mathias A1 - Maaßdorf, A. A1 - Ritala, M. A1 - David, C. T1 - Advanced thin film technology for ultrahigh resolution X-ray microscopy N2 - Further progress in the spatial resolution of X-ray microscopes is currently impaired by fundamental limitations in the production of X-ray diffractive lenses. Here, we demonstrate how advanced thin film technologies can be applied to boost the fabrication and characterization of ultrahigh resolution X-ray optics. Specifically, Fresnel zone plates were fabricated by combining electron-beam lithography with atomic layer deposition and focused ion beam induced deposition. They were tested in a scanning transmission X-ray microscope at 1.2 keV photon energy using line pair structures of a sample prepared by metalorganic vapor phase epitaxy. For the first time in X-ray microscopy, features below 10 nm in width were resolved. KW - X-ray microscopy KW - X-ray diffractive optics KW - Electron-beam lithography KW - Atomic layer deposition KW - BAM-L200 KW - Laterale Auflösung KW - Referenzmaterial KW - Röntgenmikroskopie KW - Zonenplatte PY - 2009 DO - https://doi.org/10.1016/j.ultramic.2009.07.005 SN - 0304-3991 VL - 109 IS - 11 SP - 1360 EP - 1364 PB - Elsevier CY - New York, NY AN - OPUS4-19976 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -