TY - JOUR A1 - Gavrilov, S. A1 - Oja, I. A1 - Lim, B. A1 - Belaidi, A. A1 - Bohne, W. A1 - Strub, Erik A1 - Röhrich, J. A1 - Lux-Steiner, M.C. A1 - dittrich, T. T1 - Charge selective contact on ultra-thin In(OH)xSy/Pb(OH)xSy heterostructure prepared by SILAR JF - Physica status solidi A N2 - Ultra-thin In(OH)x Sy/Pb(OH)x Sy heterostructures were formed by the wet chemical SILAR (successive ion layer adsorption and reaction) technique. ERDA (elastic recoil detection analysis) was used for stoichiometry analysis. The heterocontacts were conditioned by joint annealing of the two layers at different low temperatures in air. The charge selectivity was demonstrated with various small area solar cell structures. The results are discussed on the base of formation of bonds between sulphide clusters and passivation of defects with hydrogen containing species in hydroxy-sulphides. PY - 2006 DO - https://doi.org/10.1002/pssa.200521468 SN - 1862-6300 SN - 0031-8965 VL - 203 IS - 5 SP - 1024 EP - 1029 PB - Wiley-VCH CY - Berlin AN - OPUS4-14217 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -