TY - JOUR A1 - Chen, Ya‐Fan A1 - Arendt, Felix A1 - Bornhöft, Hansjörg A1 - de Camargo, Andréa S. S. A1 - Deubener, Joachim A1 - Diegeler, Andreas A1 - Gogula, Shravya A1 - Contreras Jaimes, Altair T. A1 - Kempf, Sebastian A1 - Kilo, Martin A1 - Limbach, René A1 - Müller, Ralf A1 - Niebergall, Rick A1 - Pan, Zhiwen A1 - Puppe, Frank A1 - Reinsch, Stefan A1 - Schottner, Gerhard A1 - Stier, Simon A1 - Waurischk, Tina A1 - Wondraczek, Lothar A1 - Sierka, Marek T1 - Ontology‐Based Digital Infrastructure for Data‐Driven Glass Development N2 - The development of new glasses is often hampered by inefficient trial‐and‐error approaches. The traditional glass manufacturing process is not only time‐consuming, but also difficult to reproduce with inevitable variations in process parameters. These challenges are addressed by implementing an ontology‐based digital infrastructure coupled with a robotic melting system. This system facilitates high‐throughput glass synthesis and ensures the collection of consistent process data. In addition, the digital infrastructure includes machine learning models for predicting glass properties and a tool for extracting patent information. Current glass databases have significant gaps in the relationships between compositions, process parameters, and properties due to inconsistent studies and nonconforming units. In addition, process parameters are often omitted, and even original literature references provide limited information. By continuously expanding the database with consistent, high‐quality data, it is aimed to fill these gaps and accelerate the glass development process. KW - Digitalisation KW - Data-driven glass development KW - Ontology PY - 2025 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-625844 DO - https://doi.org/10.1002/adem.202401560 SN - 1527-2648 SP - 1 EP - 12 PB - Wiley VHC-Verlag AN - OPUS4-62584 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Ghadamyari, Marzieh A1 - Ebrahim Hosseini, Hossein A1 - Michálková, Monika A1 - de Camargo, Andréa Simone Stucchi A1 - Cao, Jiangkun A1 - Galusek, Dušan A1 - Chukova, Oksana A1 - Wondraczek, Lothar A1 - Jacobsohn, Luiz Gustavo A1 - Klement, Róbert T1 - Broadband visible emission in undoped K2ZnGeO4 by near UV and X-ray excitation N2 - Self-activated phosphors (SAP) have attracted significant attention for a wide range of applications, including lighting, displays, scintillators, lasers, luminescence-based sensors, bioimaging, drug delivery, and luminescent security inks. In this work, we report a new white emitting SAP, α-K2ZnGeO4, synthesized by high-temperature solid-state reaction. The phosphor crystallizes in a single-phase orthorhombic structure and consists of irregularly shaped particles. Under ultraviolet (UV) and X-ray excitation the sample exhibits broad yellowish-white emission spanning the 350–800 nm spectral range, with a long-wavelength tail extending into the near-infrared region, overlapping the biological window. Average lifetime values of 20.4 and 22.6 μs were determined from the fluorescence decay curves monitored at the centre of the band (550 nm), upon excitation at 272 and 377 nm, respectively. Additionally, the decay curve of a distinct spectral feature, peaked at 385 nm, was studied upon 272 nm excitation, yielding a lifetime of 2.3 μs. The role of structural defects (donors: VO and Zni; acceptors: VZn, VGe, and Oi) in the luminescence of α-K2ZnGeO4 was also investigated. Photoluminescence spectra recorded under 366 nm and 377 nm excitation yielded CIE 1931 chromaticity coordinates of (x, y) = (0.40213, 0.46943) and (0.39326, 0.47611), respectively. The values are almost identical and correspond to yellowish-white emission, highlighting the suitability of the material as a yellowish-white phosphor in white light-emitting diodes (wLEDs). KW - Broadband emitter KW - K2ZnGeO4 KW - X-ray excitation PY - 2026 DO - https://doi.org/10.1016/j.ceramint.2026.01.063 SN - 0272-8842 VL - 52 IS - 7 SP - 8658 EP - 8669 PB - Elsevier Ltd. AN - OPUS4-65691 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -