TY - JOUR A1 - Ecker, Klaus A1 - Wätjen, U. A1 - Berger, Achim A1 - Persson, L. A1 - Pritzkow, Wolfgang A1 - Radtke, Martin A1 - Riesemeier, Heinrich T1 - RBS, SY-XRF, INAA and ICP-IDMS of antimony implanted in silicon - A multi-method approach to characterize and certify a reference material JF - Nuclear instruments and methods in physics research B N2 - A layer of Sb atoms, implanted with an energy of 400 keV and a nominal dose of 5×1016 atoms/cm2 into a high purity silicon wafer, was certified for its areal density (atoms/cm2) using Rutherford backscattering spectrometry (RBS), instrumental neutron activation analysis (INAA) and inductively coupled plasma isotope dilution mass spectrometry (ICP-IDMS) and for its isotope ratio using INAA and ICP-IDMS. Excellent agreement between the results of the different independent methods was found. In the present work, the measurements of the homogeneity of the areal density of Sb, previously determined with RBS in spots having 1 mm diameter, are improved with synchrotron X-ray fluorescence analysis: Higher precision in even smaller sample spots allows to estimate a reduced inhomogeneity of the whole batch of samples of the order of only 0.4%. Thus the uncertainty of the certified value can further be reduced. Down to fractions of a chip with 0.3×0.4 mm2 area, the areal density is now certified as (4.81±0.06)×1016 Sb atoms/cm2, where the expanded uncertainty 0.06 (coverage factor k=2) corresponds to only 1.2%. The relative merits of the different analytical methods are discussed. KW - Certified reference material KW - RBS KW - INAA KW - ICP-IDMS KW - XRF KW - SY-XRF PY - 2002 DO - https://doi.org/10.1016/S0168-583X(01)01038-2 SN - 0168-583X SN - 1872-9584 VL - 188 IS - 1-4 SP - 120 EP - 125 PB - Elsevier CY - Amsterdam AN - OPUS4-13870 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - RPRT A1 - Ecker, K. H. A1 - Wätjen, U. A1 - Berger, Achim A1 - Grötzschel, R. A1 - Persson, L. A1 - Pritzkow, W. A1 - Radtke, Martin A1 - Riebe, Gundel A1 - Riesemeier, Heinrich A1 - Vogl, Jochen T1 - Certification of antimony implanted in silicon wafer with a silicon dioxide diffusion barrier - IRMM-302 and BAM-L001 T2 - IRMM and BAM Information Reference Materials N2 - This Report describes the certification of the reference material antimony implanted in Si/SiO2 intended to be used for calibration of surface and near surface analytical methods. It describes the preparation, homogeneity measurements and the analytical work performed for the certification of both Areal density of antimony Atoms (retained dose) and the isotope amount Ratio as well as giving considerations on the stability of the material. KW - Isotope ratio KW - Areal density KW - Surface analysis PY - 2002 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-355752 SP - 1 EP - 40 PB - Institute for Reference Materials and Measurements CY - Geel, Belgium AN - OPUS4-35575 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -