TY - CONF A1 - Mäder, M. A1 - Holle, H. A1 - Schreiner, M. A1 - Pentzien, Simone A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Johann Nimmrichter, ED - Kautek, Wolfgang ED - Manfred Schreiner, T1 - Traditional and laser cleaning methods of historic picture post cards T2 - LACONA VI CY - Vienna, Austria DA - 2005-09-21 KW - Laser KW - Cleaning KW - Picture Post Card PY - 2007 SN - 978-3-540-72129-1 SN - 0930-8989 N1 - Serientitel: Springer proceedings in physics – Series title: Springer proceedings in physics IS - 116 SP - 281 EP - 286 PB - Springer CY - Berlin AN - OPUS4-16378 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Lerber, K. von A1 - Strlic, M. A1 - Kolar, J. A1 - Krüger, Jörg A1 - Pentzien, Simone A1 - Kennedy, C. A1 - Wess, T. A1 - Sokhan, M. A1 - Kautek, W. ED - Johann Nimmrichter, ED - Kautek, Wolfgang ED - Manfred Schreiner, T1 - Laser cleaning of undyed silk: Indications of chemical change T2 - LACONA VI CY - Vienna, Austria DA - 2005-09-21 KW - Laser KW - Cleaning KW - Silk KW - Textiles KW - Viscometry KW - X-ray diffraction KW - SIMS PY - 2007 SN - 978-3-540-72129-1 SN - 0930-8989 N1 - Serientitel: Springer proceedings in physics – Series title: Springer proceedings in physics IS - 116 SP - 313 EP - 319 PB - Springer CY - Berlin AN - OPUS4-16379 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Geier, M. A1 - Eberstein, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Völkel, L. A1 - Böhme, R. A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Impact of laser treatment on phosphoric acid coated multicrystalline silicon PV-wafers N2 - The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Silicon solar cell KW - Selective emitter KW - Laser processing KW - Doping KW - Simulation PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.7 SP - 1243 EP - 1247 AN - OPUS4-24995 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Eberstein, M. A1 - Geier, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Voelkel, L. A1 - Böhme, R. A1 - Pentzien, Simone A1 - Koter, Robert A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant N2 - Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Doping KW - Selective emitter KW - Multicrystalline silicon PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.2 SP - 1220 EP - 1223 AN - OPUS4-24996 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hjelmar, O. A1 - Wahlström, M. A1 - Comans, R. A1 - Kalbe, Ute A1 - Grathwohl, P. A1 - Mehu, J. A1 - Schiopu, N. A1 - Hyks, J. A1 - Laine-Ylijoki, J. A1 - Van Zomeren, A. A1 - Krüger, Oliver A1 - Schoknecht, Ute A1 - Wendel, T. A1 - Abdelghafour, M. A1 - Borho, N. ED - Arm, M. ED - Vandecasteele, C. ED - Heynen, J. ED - Suer, P. ED - Lind, B. T1 - Robustness validation of two harmonized European leaching tests for assessment ot the leaching of construction products, including waste-based construction materials N2 - Two leaching tests, a tank leaching test (TS-2) and a percolation test (TS-3), developed by CEN/TC 351 for use in assessing environmental properties in relation to CE marking of construction products, are undergoing robustness validation as part of the standardisation procedure. This paper provides an overview of the activities included in the robustness validation programme. T2 - WASCON 2012 CY - Gothenburg, Sweden DA - 30.05.2012 KW - Tank leaching test KW - Percolation test KW - Robustness validation KW - Construction products PY - 2012 SP - 1 EP - 5 PB - ISCOWA and SGI AN - OPUS4-26966 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Blind, K. A1 - Krüger, M. A1 - Kinne, J. A1 - Mirtsch, Mona ED - Jacobs, K. T1 - Organisation Innovation in the Digital Layer: Exploring the Adoption of the Management System Standard ISO/IEC 27001 N2 - Despite the increasing relevance of cybersecurity for companies’ performance, there is limited research on the adoption of ISO/IEC 27001, an international information security management standard. The aim of our study is to expand this limited body of literature. First, we analyse the influence of companies’ networks on the adoption of ISO/IEC 27001 as an organisational innovation based on firm website data and their hyperlinks, using the entire population of ISO/IEC 27001 certified firms identified via web mining. Second, we validate the method of constructing and analysing companies’ “digital layer” following the call for new methodological approaches to study the organisational adoption of innovations. Our findings reveal that companies' decision to adopt ISO/IEC 27001 increases significantly with their number of linkages to other companies and to those having the same certificate. Finally, their cognitive and organisational distances to linked partners have the expected inverted u-shaped influence on their own adoption decision. T2 - 11th International Conference on Standardisation and Innovation in Information Technology (SIIT 2021) CY - Aachen, Germany DA - 06.09.2021 KW - Information Security KW - Hyperlinks KW - Management system standard KW - Digital Layer PY - 2021 SN - 978-3-95886-421-4 SP - 95 PB - Verlagshaus Mainz GmbH Aachen CY - Mainz AN - OPUS4-54411 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Andree, Stefan A1 - Heidmann, B. A1 - Ringleb, F. A1 - Eylers, K. A1 - Bonse, Jörn A1 - Boeck, T. A1 - Schmid, M. A1 - Krüger, Jörg T1 - Femtosecond laser pulses for photovoltaic bottom-up strategies N2 - A promising technology in photovoltaics is based on micro-concentrator solar cells, where the photovoltaic active area is realized as an array of sub-millimeter sized cells onto which the incident light is focused via microlenses. This approach allows to increase the cell efficiency and to realize much more compact modules compared to macroscopic concentrator devices. At the same time, expensive raw materials can be saved, which is of interest, for example, with respect to indium in the case of copper-indium-gallium-diselenide (CIGSe) thin film solar cells. Two methods to produce micro-sized precursors of CIGSe absorbers on molybdenum are presented using 30-fs laser pulses at 790 nm wavelength. On the one hand, a multi pulse surface structuring of the molybdenum film or the underlying glass substrate and a subsequent physical vapor deposition were used for a site-selective aggregation of indium droplets. On the other hand, a single pulse laser-induced forward transfer was utilized to selectively deposit combined copper-indium precursor pixels on the molybdenum back contact of the solar cell. Post-processing (selenization, isolation, contacting) of the laser-generated micro-sized precursors results in functional CIGSe solar cells. T2 - 10. Mittweidaer Lasertagung CY - Mittweida, Germany DA - 16.11.2017 KW - Copper indium gallium diselenide (CIGSe) KW - Micro solar cell KW - Femtosecond laser KW - Laser ablation KW - Laser-induced forward transfer (LIFT) PY - 2017 SN - 1437-7624 VL - 2 SP - 1 EP - 4 PB - Hochschule Mittweida CY - Mittweida AN - OPUS4-42988 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schmid, M. A1 - Heidmann, B. A1 - Ringleb, F. A1 - Eylers, K. A1 - Ernst, O. A1 - Andree, Stefan A1 - Bonse, Jörn A1 - Boeck, T. A1 - Krüger, Jörg T1 - Locally grown Cu(In,Ga)Se2 micro islands for concentrator solar cells N2 - Light concentration opens up the path to enhanced material efficiency of solar cells via increased conversion efficiency and decreased material requirement. For true material saving, a fabrication method allowing local growth of high quality absorber material is essential. We present two scalable fs-laser based approaches for bottom-up growth of Cu(In,Ga)Se2 micro islands utilizing either site-controlled assembly of In(,Ga) droplets on laser-patterned substrates during physical vapor deposition, or laser-induced forward transfer of (Cu,In,Ga) layers for local precursor arrangement. The Cu(In,Ga)Se2 absorbers formed after selenization can deliver working solar devices showing efficiency enhancement under light concentration. T2 - SPIE OPTO, 2018 CY - San Francisco, USA DA - 29.01.2018 KW - Chalcopyrite KW - Cu(In,Ga)Se2 KW - Fs-laser patterning KW - Laser-induced forward transfer KW - Micro solar cell PY - 2018 SN - 978-1-5106-1540-3 SN - 0277-786X SN - 1996-756X VL - 10527 SP - 1052707-1 EP - 1052707-9 PB - SPIE CY - Bellingham, WA, USA AN - OPUS4-44450 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Diel, W. A1 - Waßmer, M. A1 - Krüger, K. A1 - Naghib Zadeh, Hamid A1 - Rabe, Torsten T1 - Einfluss unterschiedlicher Dielektrika bei der Realisierung von Dickschichtkondensatoren im Tintenstrahldruck T2 - Deutsche IMAPS-Konferenz 2009 CY - München, Deutschland DA - 2009-10-27 KW - Tintenstrahldruck KW - Inkjet KW - High-K Keramik KW - Kondensator KW - Dickschicht KW - Bariumtitanat PY - 2009 SP - 1 EP - 8 AN - OPUS4-20613 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Reinhardt, M. A1 - Krüger, Ralph-Peter A1 - v. Lampe, I. A1 - Lorkowski, H.-J. T1 - Über Lösekinetik und Acidität einiger phenolischer Polymere T2 - 5. Berliner Polymertage 1994 CY - Potsdam DA - 1994-10-05 PY - 1994 CY - Potsdam AN - OPUS4-2199 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -