TY - CONF A1 - Krüger, Jörg T1 - Covering Ti6Al4V implant material with bioactive ceramics using femtosecond laser processing T2 - 5th European Conference on Applications of Femtosecond Lasers in Materials Science (FemtoMat 2013) CY - Mauterndorf, Austria DA - 2013-03-18 PY - 2013 AN - OPUS4-28048 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Krüger, Jörg T1 - X-ray emission during ultrashort pulse laser processing N2 - The industrial use of ultrashort laser pulses has made considerable progress in recent years. The reasons for this lie in the availability of high average powers at pulse repetition rates in the several 100 kHz range. The advantages of using ultrashort laser pulses in terms of processing precision can thus be fully exploited. However, high laser intensities on the workpiece can also lead to the generation of unwanted X-rays. Even if the emitted X-ray dose per pulse is low, the accumulated X-ray dose can become significant for high-repetition-rate laser systems so that X-ray exposure safety limits must be considered. The X-ray emission during ultrashort pulse laser processing was investigated for a pulse duration of 925 fs at 1030 nm wavelength and 400 kHz repetition rate. Industrially relevant materials such as steel, aluminum and glass were treated. Tungsten served as reference. X-ray spectra were recorded, and X-ray dose measurements were performed for laser treatment in air. For laser intensities > 2 × 10^13 W/cm2, X-ray doses exceeding the regulatory exposure limits for members of the public were found. Suitable X-ray protection strategies are proposed. T2 - SPIE Photonics West CY - San Francisco, USA DA - 02.02.2019 KW - Laser-induced X-ray emission KW - Ultrashort laser material interaction KW - Radiation protection PY - 2019 AN - OPUS4-47361 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Krüger, Jörg T1 - Röntgenemission bei der UKP-Laser-Materialbearbeitung N2 - Der Vortrag stellt Untersuchungen im Rahmen eines BMBF-geförderten Vorhabens zur unerwünschten Röntgenemission bei der Materialbearbeitung mit ultrakurzen Laserpulsen vor. T2 - Seminar LEF - Laser in der Elektronikproduktion & Feinwerktechnik CY - Fürth, Germany DA - 26.02.2019 KW - Ultrakurze Laserpulse KW - Materialbearbeitung KW - Sekundärstrahlung KW - Röntgenemission KW - Laserschutz PY - 2019 AN - OPUS4-47468 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Hülagü, Deniz A1 - Hirahara, Kenta A1 - Fischer, Daniel A1 - Florian, Camilo A1 - Schusterbauer, Robert A1 - Ermilova, Elena A1 - Krüger, Jörg A1 - Unterreiner, Andreas-Neil A1 - Bonse, Jörn A1 - Hertwig, Andreas T1 - Using imaging ellipsometry to understand femtosecond laser materials processing of group IV materials N2 - Laser materials processing is an important tool for creating and shaping new materials. Laser machining, especially with ultrashort pulses offers the modification of surfaces, thin coatings, and bulk materials with an unprecedented precision and control. The most desired feature of pulsed laser processing in the femtosecond range is that the heat-affected zone in the irradiated material will be extremely small. To better understand the mechanisms involved during laser irradiation, it is important to analyse the outcome of light-matter interaction with spectroscopic methods. Ellipsometry, especially spectroscopic imaging ellipsometry (SIE), has become an important tool for this in recent times, as it gives access to local layer thicknesses, materials dielectric functions, and features like changes in surface roughness. This work includes an overview over our recent studies examining near-infrared fs-laser surface processing of different group IV materials. The superficial phase change of silicon from crystalline to amorphous has been investigated in the past as the result of laser processing strongly depends on the crystal orientation. Moreover, SIE is capable of determining the properties of buried a-Si interfaces with micrometer lateral and sub-nanoneter vertical precision. Additionally, the growth of native and laser-induced oxides can be revealed. T2 - ICSE10 - 10th International Conference on Spectroscopic Ellipsometry CY - Boulder, CO, USA DA - 08.06.2025 KW - Laser surface ablation KW - Amorphous Carbon KW - Silicon KW - Correlative Imaging Ellipsometry PY - 2025 AN - OPUS4-63633 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -