TY - JOUR A1 - Wandel, K. A1 - Procop, Mathias A1 - Richter, U. A1 - Wolf, R. T1 - The influence of the storage time and the deposition of SiO2 on the properties of H2SO4 etched (In,Ga) As surface layers investigated by XPS and ellipsometry PY - 1993 SN - 0268-1242 SN - 1361-6641 VL - 8 SP - 1438 EP - 1444 PB - IOP Publ. CY - Bristol AN - OPUS4-7087 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Gruska, B. A1 - Wandel, K. A1 - Procop, Mathias ED - Lengeler, B. T1 - The InGaAs/SiO2 interface investigated by angle resolved XPS and ellipsometry T2 - 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI) CY - Jülich, Germany DA - 1993-06-14 PY - 1993 SN - 981-021559-2 VL - 4 SP - 373 EP - 376 PB - World Scientific CY - Singapore AN - OPUS4-7088 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Procop, Mathias A1 - Wandel, K. A1 - Verucchi, R. T1 - Ex-situ XPS-investigation of the interface between PE-CVD SiO2 and wet chemically etched MO-CVD epitaxial layers of In0.53Ga0.47As PY - 1995 SN - 0937-0633 VL - 353 SP - 647 EP - 654 PB - Springer CY - Berlin AN - OPUS4-7095 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Procop, Mathias A1 - Wandel, K. T1 - Photoelectron spectroscopic and ellipsometric investigation of In0.53Ga0.47As surfaces after wet chemical etching PY - 1993 SN - 0937-0633 VL - 364 SP - 23 EP - 28 PB - Springer CY - Berlin AN - OPUS4-7096 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -