TY - GEN A1 - Becker, S. A1 - Beckmann, Jörg A1 - Braun, M.-T. A1 - Cojocari, O. A1 - Feige, V. A1 - Fischer, B. A1 - Friederich, F. A1 - Globisch, B. A1 - Hechtfischer, G. A1 - Hens, K. A1 - Hübers, H.-W. A1 - Jelonnek, J. A1 - Jonuscheit, J. A1 - Keil, A. A1 - Kleine-Ostmann, T. A1 - Marquardt, E. A1 - Mayr, M. A1 - Nickel, H.-U. A1 - Nüßler, D. A1 - Peichl, M. A1 - Peters, O. A1 - Schür, J. A1 - Sprenger, T. A1 - Steiger, A. A1 - van Frank, S. A1 - Vieweg, N. A1 - Wilk, R. ED - Jonuscheit, J. ED - Marquardt, E. T1 - Terahertzsysteme und Anwendungsfelder N2 - Der Frequenzbereich der Terahertzwellen liegt im elektromagnetischen Spektrum zwischen den Mikrowellen und dem infraroten Licht – also etwa im Bereich von 0,1 bis 10 Terahertz (THz). Der VDI-Statusreport „Terahertzsysteme und Anwendungen“ stellt die unterschiedlichen Konzepte für Terahertzsysteme vor und zeigt Anwendungsbeispiele, bei denen die Terahertztechnik erfolgreich eingesetzt wird. Umfangreiche Literaturangaben ermöglichen eine intensivere Beschäftigung mit allen Themen des VDI-Statusreports. KW - Terahertzsysteme PY - 2020 UR - https://www.vdi.de/ueber-uns/presse/publikationen/details/terahertzsysteme-und-anwendungsfelder SP - 1 EP - 44 PB - Verein Deutscher Ingenieure (VDI) CY - Düsseldorf AN - OPUS4-50556 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Tjaden, B. A1 - Baum, K. A1 - Marquardt, V. A1 - Simon, M. A1 - Trajkovic-Arsic, M. A1 - Kouril, T. A1 - Siebers, B. A1 - Lisec, Jan A1 - Siveke, J. T. A1 - Schulte, J. H. A1 - Benary, U. A1 - Remke, M. A1 - Wolf, J. A1 - Schramm, A. T1 - MYCN-induced metabolic rewiring creates novel therapeutic vulnerabilities in neuroblastoma N2 - MYCN is a transcription factor that is aberrantly expressed in many tumor types and is often correlated with poor patient prognosis. Recently, several lines of evidence pointed to the fact that oncogenic activation of MYC family proteins is concomitant with reprogramming of tumor cells to cope with an enhanced need for metabolites during cell growth. These adaptions are driven by the ability of MYC proteins to act as transcriptional amplifiers in a tissue-of-origin specific manner. Here, we describe the effects of MYCN overexpression on metabolic reprogramming in neuroblastoma cells. Ectopic expression of MYCN induced a glycolytic switch that was concomitant with enhanced sensitivity towards 2-deoxyglucose, an inhibitor of glycolysis. Moreover, global metabolic profiling revealed extensive alterations in the cellular metabolome resulting from overexpression of MYCN. Limited supply with either of the two main carbon sources, glucose or glutamine, resulted in distinct shifts in steady-state metabolite levels and significant changes in glutathione metabolism. Interestingly, interference with glutamine-glutamate conversion preferentially blocked proliferation of MYCN overexpressing cells, when glutamine levels were reduced. Thus, our study uncovered MYCN induction and nutrient levels as important metabolic master switches in neuroblastoma cells and identified critical nodes that restrict tumor cell proliferation. KW - Mass-spectrometry KW - Tumor metabolism KW - MYCN PY - 2018 DO - https://doi.org/10.1101/423756 SP - 1 EP - 21 PB - Cold Spring Harbor Laboratory CY - Cold Spring Harbor, NY AN - OPUS4-46815 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Schäfer, N. A1 - Wilkinson, A. J. A1 - Schmid, Thomas A1 - Winkelmann, Aimo A1 - Chahine, G. A. A1 - Schülli, T. U. A1 - Rissom, T. A1 - Marquardt, J. A1 - Schorr, S. A1 - Abou-Ras, D. T1 - Microstrain distribution mapping on CuInSe2 thin films by means of electron backscatter diffraction, X-ray diffraction, and Raman microspectroscopy N2 - The investigation of the microstructure in functional, polycrystalline thin films is an important contribution to the enhanced understanding of structure–property relationships in corresponding devices. Linear and planar defects within individual grains may affect substantially the performance of the device. These defects are closely related to strain distributions. The present work compares electron and X-ray diffraction as well as Raman microspectroscopy, which provide access to microstrain distributions within individual grains. CuInSe₂ thin films or solar cells are used as a modelsystem. High-resolution electron backscatter diffraction and X-ray microdiffraction as well as Ramanmicrospectroscopy were applied for this comparison. Consistently, microstrain values were determined of the order of 10⁻⁴ by these three techniques. However,only electron backscatter diffraction, X-ray microdiffraction exhibit sensitivities appropriate for mapping local strain changes at the submicrometer level within individual grains in polycrystalline materials. KW - Microstrain KW - Thin film KW - X-ray microdiffraction KW - EBSD KW - Raman microspectroscopy PY - 2016 DO - https://doi.org/10.1016/j.ultramic.2016.07.001 SN - 0304-3991 SN - 1879-2723 VL - 169 SP - 89 EP - 97 PB - Elsevier B.V. AN - OPUS4-37453 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Raute, J. A1 - Marquardt, R. A1 - Biegler, M. A1 - Rethmeier, Michael T1 - Untersuchung zum Elektronenstrahlschweißen additiv gefertigter Ni-Basis-Bauteile N2 - Die vorliegende Untersuchung befasst sich mit dem Einfluss des Additive Manufacturing auf die Schweißeignung von Bauteilen aus Inconel 718. Hierfür wurden Proben mittels DED und L-PBF hergestellt und ihr Verhalten in Blindschweißversuchen anhand eines Vergleichs mit konventionellen Gussblechen untersucht. Im zweiten Schritt wurden die verschiedenen additiv hergestellten Proben mit dem Gussmaterial im I-Stoß sowie untereinander verschweißt. Als Schweißverfahren wurde für alle Proben das Elektronenstrahlschweißen angewandt. Zur Auswertung wurde anhand von Schliffen das Nahtprofil vermessen und die Proben auf Poren und Risse untersucht. Zusätzlich wurde die Dichte vermessen und eine Prüfung auf Oberflächenrisse durchgeführt. Das AM-Material zeigte dabei Unterschiede in Nahtform und Defektneigung im Vergleich zum Gusswerkstoff. Insbesondere die DED-proben neigten unter bestimmten Parameterkonstellationen verstärkt zu Porenbildung. Risse konnten nicht beobachtet werden. Trotz auftretender Nahtunregelmäßigkeiten wurde in den kombinierten AM-Schweißproben die Bewertungsgruppe C erreicht. Eine Prüfung der bestehenden Regelwerke zur Schweißnahtbewertung anhand der gewonnenen Erkenntnisse zu additiv gefertigten Proben im Elektronenstrahlschweißprozess zeigte keinen Ergänzungsbedarf. T2 - #additivefertigung: Metall in bestForm CY - Essen, Germany DA - 26.10.2022 KW - Elektronenstrahlschweißen KW - Additive Fertigung KW - Schweißnahtbewertung PY - 2022 SN - 978-3-96144-202-7 VL - 383 SP - 81 EP - 92 PB - DVS-Media GmbH AN - OPUS4-56173 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Frisch, M. A1 - Laun, J. A1 - Marquardt, Julien A1 - Arinchtein, A. A1 - Bauerfeind, K. A1 - Bernsmeier, D. A1 - Bernicke, M. A1 - Bredow, T. A1 - Kraehnert, R. T1 - Bridging experiment and theory: enhancing the electrical conductivities of soft-templated niobium-doped mesoporous titania films† N2 - Theoretical calculations suggest a strong dependence of electrical conductivity and doping concentration in transition-metal doped titania. Herein, we present a combined theoretical and experimental approach for the prediction of relative phase stability and electrical conductivity in niobium-doped titania as model system. Our method paves the way towards the development of materials with improved electrical properties. KW - Electrical conductivity KW - Prediction relative KW - Transition-metal doped KW - System method PY - 2021 UR - https://nbn-resolving.org/urn:nbn:de:kobv:b43-521371 DO - https://doi.org/10.1039/d0cp06544g SN - 1463-9084 VL - 23 IS - 5 SP - 3219 EP - 3224 PB - Royal Society of Chemistry AN - OPUS4-52137 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Marquardt, J. A1 - Gurieva, G. A1 - Stephan-Scherb, Christiane A1 - Schorr, S. T1 - The Effect of Copper Vacancies on the Anion Position of Chalcopyrite Type CuGaS2 N2 - The prediction of structural parameters and optoelectronic properties of compound semiconductors is very important. However, calculations often neglect chemical variability and structural defects. In chalcopyrite type semiconductors one of the major defects are copper vacancies (V Cu). The four cation neighbors of the anion determine its position in the chalcopyrite type structure expressed by the Wyckoff position 8d (x, 1/4, 1/8). Intrinsic point defects like V Cu and anti-sites may cause variations of the Anion position in the middle of the cation tetrahedron, especially in the Anion position Parameter x. For stoichiometric chalcopyrite type compounds a formalism according to the principle of conservation of tetrahedral bonds (CTB) can be applied to calculate the anion position parameter, but it fails in the case of off-stoichiometric chalcopyrites. This case study of chalcopyrite type CuGaS 2 and Mn-substituted GuGaS 2 shows that the experimentally determined anion position Parameter x deviate from values calculated by CTB approach. The systematic investigation of off-stoichiometric CuGaS 2 and Mn-substituted GuGaS 2 demonstrates the effect of copper vacancies on the average radii of the cation sites (Wyckoff positions 4a and 4b) as well as on the anion position Parameter x. By applying an elaborated CTB Approach implementing copper vacancies an agreement between experimental and calculated anion position Parameter x can be obtained. KW - Chalcogenides KW - Neutron diffraction KW - Copper vacancies PY - 2019 DO - https://doi.org/10.1002/pssa.201800882 VL - 216 IS - 15 SP - 1800882 PB - Wiley AN - OPUS4-47748 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -