TY - JOUR A1 - Rohloff, M. A1 - Das, S.K. A1 - Höhm, S. A1 - Grunwald, R. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Formation of laser-induced periodic surface structures on fused silica upon multiple cross-polarized double-femtosecond-laser-pulse irradiation sequences N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica with multiple irradiation sequences consisting of five Ti:sapphire femtosecond (fs) laser pulse pairs (150 fs, 800 nm) is studied experimentally. A Michelson interferometer is used to generate near-equal-energy double-pulse sequences with a temporal pulse delay from -20 to +20 ps between the cross-polarized individual fs-laser pulses (~0.2 ps resolution). The results of multiple double-pulse irradiation sequences are characterized by means of Scanning Electron and Scanning Force Microscopy. Specifically in the sub-ps delay domain striking differences in the surface morphologies can be observed, indicating the importance of the laser-induced free-electron plasma in the conduction band of the solids for the formation of LIPSS. KW - Atomic force microscopy KW - Conduction bands KW - High-speed optical techniques KW - Laser beam effects KW - Scanning electron microscopy KW - Silicon compounds KW - Surface morphology PY - 2011 DO - https://doi.org/10.1063/1.3605513 SN - 0021-8979 SN - 1089-7550 VL - 110 IS - 1 SP - 014910-1 - 014910-4 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-24049 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures T2 - International High-Power Laser Ablation Conference (HPLA 2012) CY - Santa Fe, NM, USA DA - 2012-04-30 PY - 2012 AN - OPUS4-24442 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures on materials with varying band gap T2 - International workshop on laser-induced periodic surface structures CY - Enschede, Netherlands DA - 2011-10-11 PY - 2011 AN - OPUS4-24264 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Novel Laser Structuring Method for Chalkopyrite Solar Cells T2 - Marie Sklodowska-Curie Symposium on the Foundations of Physical Chemistry CY - Warsaw, Poland DA - 2011-11-18 PY - 2011 AN - OPUS4-24920 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Dirnstorfer, I. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. A1 - Stegemann, B. T1 - P1, P2 and P3 structuring of CIGSe solar cells with a single laser wavelength N2 - Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Nanosecond pulses KW - Ablation KW - Cu(InGa)Se2 KW - Electrical properties PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3AV.1.35 SP - 2540 EP - 2543 AN - OPUS4-24998 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Stegemann, B. A1 - Schultz, C. A1 - Schüle, M. A1 - Richter, M. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Fink, F. ED - Luschtinetz, T. ED - Lehmann, J. T1 - Neuartige Laserstrukturierung von CIGSe-Dünnschicht-Solarzellen N2 - Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe- Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht. N2 - A major advantage of thin film photovoltaics over wafer-based photovoltaics is the monolithic series connection. Manufacturing of chalcopyrite (CIGSe) thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated simply by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced direct ablation. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection between the front and back contact. T2 - 18. Symposium "Nutzung regenerativer Energiequellen und Wasserstofftechnik" / VDI-Tagung "Energieland Mecklenburg-Vorpommern" CY - Stralsund, Germany DA - 03.11.2011 KW - Photovoltaik KW - Dünnschichtsolarzellen KW - Chalkopyrite KW - Laserstrukturierung PY - 2011 SN - 978-3-9813334-4-2 SP - 204 EP - 210 AN - OPUS4-24999 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Geier, M. A1 - Eberstein, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Völkel, L. A1 - Böhme, R. A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Impact of laser treatment on phosphoric acid coated multicrystalline silicon PV-wafers N2 - The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Silicon solar cell KW - Selective emitter KW - Laser processing KW - Doping KW - Simulation PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.7 SP - 1243 EP - 1247 AN - OPUS4-24995 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Eberstein, M. A1 - Geier, M. A1 - Grießmann, H. A1 - Partsch, U. A1 - Voelkel, L. A1 - Böhme, R. A1 - Pentzien, Simone A1 - Koter, Robert A1 - Mann, Guido A1 - Bonse, Jörn A1 - Krüger, Jörg T1 - Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant N2 - Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.2011 KW - Laser processing KW - Doping KW - Selective emitter KW - Multicrystalline silicon PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-2BV.1.2 SP - 1220 EP - 1223 AN - OPUS4-24996 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures T2 - Institutskolloquium des Leibniz-Instituts für Oberflächenmodifizierung CY - Leipzig, Germany DA - 2012-06-07 PY - 2012 AN - OPUS4-25531 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures generated in different environments T2 - European Materials Research Society (EMRS) Spring Meeting 2012, Symposium V "Laser materials processing for micro and nano applications" CY - Strasbourg, France DA - 2012-05-12 PY - 2012 AN - OPUS4-25521 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced modification and ablation of hydrogenated amorphous carbon films T2 - European Materials Research Society (EMRS) Spring Meeting 2012, Symposium V "Laser materials processing for micro and nano applications" CY - Strasbourg, France DA - 2012-05-12 PY - 2012 AN - OPUS4-25522 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Nanostrukturierung mit Femtosekundenlaserpulsen T2 - Seminar "Laser in der Feinbearbeitung" des Laserverbundes Berlin Brandenburg e. V. CY - Brandenburg an der Havel, Germany DA - 2012-04-19 PY - 2012 AN - OPUS4-25681 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Seuthe, T. A1 - Höfner, M. A1 - Reinhardt, F. A1 - Tsai, W.J. A1 - Bonse, Jörn A1 - Eberstein, M. A1 - Eichler, H.J. A1 - Grehn, M. T1 - Femtosecond laser-induced modification of potassium-magnesium silicate glasses: An analysis of structural changes by near edge x-ray absorption spectroscopy N2 - The effects of femtosecond laser pulse irradiation on the glass structure of alkaline silicate glasses were investigated by x-ray absorption near edge structure spectroscopy using the beamline of the Physikalisch-Technische Bundesanstalt at the electron synchrotron BESSY II in Berlin (Germany) by analyzing the magnesium Κ-edge absorption peak for different laser fluences. The application of fluences above the material modification threshold (2.1 J/cm²) leads to a characteristic shift of ~1.0 eV in the Κ-edge revealing a reduced (~3%) mean magnesium bond length to the ligated oxygen ions (Mg-O) along with a reduced average coordination number of the Mg ions. KW - Glass KW - Glass structure KW - Laser beam effects KW - Magnesium compounds KW - Potassium compounds KW - XANES PY - 2012 DO - https://doi.org/10.1063/1.4723718 SN - 0003-6951 SN - 1077-3118 VL - 100 IS - 22 SP - 224101-1 EP - 224101-3 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-25918 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Generation, Control and Mechanisms of the Formation of Periodic Surface Structures on the Nanometer Scale Induced by Femtosecond Laser Pulse Irradiation of Solids T2 - Julius Springer Forum for Applied Physics 2012 CY - Berlin, Germany DA - 2012-06-20 PY - 2012 AN - OPUS4-26141 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic nanostructures T2 - 8th International Conference on Photo-Excited Processes and Processes and Applications (ICPEPA-8) CY - Rochester, NY, USA DA - 2012-08-12 PY - 2012 AN - OPUS4-26144 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Höhm, S. A1 - Rosenfeld, A. T1 - Femtosecond laser-induced periodic surface structures N2 - The formation of laser-induced periodic surface structures (LIPSS) in different materials (metals, semiconductors, and dielectrics) upon irradiation with linearly polarized fs-laser pulses (τ~30–150 fs, λ~800 nm) in air environment is studied experimentally and theoretically. In metals, predominantly low-spatial-frequency-LIPSS with periods close to the laser wavelength λ are observed perpendicular to the polarization. Under specific irradiation conditions, high-spatial-frequency-LIPSS with sub-100-nm spatial periods (~λ/10) can be generated. For semiconductors, the impact of transient changes of the optical properties to the LIPSS periods is analyzed theoretically and experimentally. In dielectrics, the importance of transient excitation stages in the LIPSS formation is demonstrated experimentally using (multiple) double-fs-laser-pulse irradiation sequences. A characteristic decrease of the LIPSS periods is observed for double-pulse delays of less than 2 ps. KW - Laser-induced periodic surface structures (LIPSS) KW - Femtosecond laser ablation KW - Ultrafast optical techniques KW - Silicon KW - Titanium KW - Silica PY - 2012 DO - https://doi.org/10.2351/1.4712658 SN - 1042-346X SN - 1938-1387 VL - 24 IS - 4 SP - 042006-1 EP - 042006-7 PB - Laser Institute of America CY - Orlando, Fla., USA AN - OPUS4-26198 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Grehn, M. A1 - Tsai, W.J. A1 - Höfner, M. A1 - Seuthe, T. A1 - Bonse, Jörn A1 - Mermillod-Blondin, A. A1 - Rosenfeld, A. A1 - Hennig, J. A1 - Achtstein, A. W. A1 - Theiss, C. A1 - Woggon, U. A1 - Eberstein, M. A1 - Eichler, H.J. T1 - Nonlinear optical properties of binary and ternary silicate glasses upon near-infrared femtosecond pulse laser irradiation N2 - Some nonlinear optical properties such as the nonlinear refractive index and the nonlinear effective absorption, as well as the laser-induced single-pulse ablation threshold are characterized for a series of binary and ternary silicate glasses upon irradiation with near-infrared femtosecond laser pulses (800 nm, 130 fs). The laser-induced ablation threshold varies from 2.3 J/cm² in case of potassium silicate glass up to 4.3 J/cm² in case of Fused Silica. Nonlinear refractive indices are qualitatively similar within the range 1.7-2.7×10-16 cm²/W. Complementary optical and physico-chemical properties like band gap energy and the glass transformation temperature have been measured for all the glasses. T2 - International symposium on high power laser ablation 2012 CY - Santa Fe, NM, USA DA - 30.04.2012 KW - Laser-induced damage threshold KW - Laser ablation KW - Nonlinear refractive index KW - Silicate glass systems KW - Glass transformation temperature KW - Coefficient of thermal expansion PY - 2012 SN - 978-0-7354-1068-8 DO - https://doi.org/10.1063/1.4739918 N1 - Serientitel: AIP conference proceedings – Series title: AIP conference proceedings VL - 1464 SP - 660 EP - 670 AN - OPUS4-26318 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Bonse, Jörn ED - Hemsworth, E.J. T1 - Nanaosecond and femtosecond laser ablation of TeO2 crystals: surface characterization and plasma analysis N2 - Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 nm, repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2 ) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use time- of-flight mass spectrometry (TOFMS) to analyze the elemental composition of the ablation products generated upon laser irradiation of c-TeO2 with single fs- (pulse duration ~200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion signals strongly depends on the applied laser pulse energy. Singly charged oxygen ions (O+) are always present as a byproduct in both kinds of laser ablation. KW - Tellurium dioxide crystals KW - Femtosecond laser ablation KW - VUV nanosecond laser ablation KW - Multiphoton absorption KW - Time-of-flight mass spectroscopy KW - Incubation KW - Optical properties KW - Scanning electron microscopy KW - Atomic force microscopy KW - Isotopes PY - 2011 SN - 978-1-61324-851-5 N1 - Serientitel: Physics Research and Technology – Series title: Physics Research and Technology IS - Chapter 4 SP - 77 EP - 96 PB - Nova Science Publishers, Inc. AN - OPUS4-25454 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CHAP A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Bonse, Jörn ED - Hemsworth, E.J. T1 - Nanosecond and femtosecond laser ablation of TeO2 crystals: surface characterization and plasma analysis N2 - Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 um, Repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO? (c-Te02) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the Ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use timeof-flight mass spectrometry (TOFMS) to analyze the elemental composltion of the ablation products generated upon laser irradiation of c-Te02 with single fs- (pulse duration ~ 200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three Order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion Signals strongly depends on the applied laser pulse energy. Singly charged Oxygen ions (0+) are always present as a byproduct in both kinds of laser ablation. KW - Femtosecond laser ablation KW - Nanosecond laser ablation KW - Damage threshold KW - TeO2 KW - Dielectrics KW - Time-of-flight mass spectrometry (TOF-MS) PY - 2011 SN - 978-1-61324-851-5 N1 - Serientitel: Physics Research and Technology – Series title: Physics Research and Technology IS - Chapter 4 SP - 77 EP - 96 PB - Nova Science Publishers, Inc. AN - OPUS4-25465 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Periodic surface structures generated by cross-polarized double femtosecond laser pulse irradiation sequences T2 - Photonics West, SPIE Conference 8607 on Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVIII CY - San Francisco, CA, USA DA - 2013-02-02 PY - 2013 AN - OPUS4-27668 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic nanostructures T2 - International workshop on "Laser micro and nano structuring: Fundamentals et applications" CY - Paris, France DA - 2012-12-10 PY - 2012 AN - OPUS4-27659 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser pulse modification of binary lithium silicate glasses T2 - International workshop on "Laser micro and nano structuring: Fundamentals et applications" CY - Paris, France DA - 2012-12-10 PY - 2012 AN - OPUS4-27660 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures T2 - ULTRA Forschungseminar des Instituts für Physik der Universität Kassel CY - Kassel, Germany DA - 2012-11-12 PY - 2012 AN - OPUS4-27153 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Mann, Guido A1 - Krüger, Jörg A1 - Marcinkowski, M. A1 - Eberstein, M. T1 - Femtosecond laser-induced removal of silicon nitride layers from doped and textured silicon wafers used in photovoltaics N2 - The removal of a 75- to 90-nm-thick passivating silicon nitride antireflection coating from standard textured multicrystalline silicon photovoltaic wafers with a typical diffused 90-Ω/sq-emitter upon irradiation with near-infrared femtosecond laser pulses (790 nm central wavelength, 30 fs pulse duration) is studied experimentally. The laser irradiation areas are subsequently characterized by complementary optical microscopy, scanning electron microscopy and depth profiling chemical analyses using secondary ion mass spectrometry. The results clarify the thin-film femtosecond laser ablation scenario and outline the process windows for selective antireflection coating removal. KW - Photovoltaics KW - Solar cell KW - Laser processing KW - FS-laser ablation KW - Silicon nitride PY - 2013 DO - https://doi.org/10.1016/j.tsf.2013.07.005 SN - 0040-6090 VL - 542 SP - 420 EP - 425 PB - Elsevier CY - Amsterdam AN - OPUS4-28874 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced removal of antireflection coatings from textured silicon wafers T2 - SiliconPV 2013, 3rd International Conference on Crystalline Silicon Photovoltaics CY - Hamelin, Germany DA - 2013-03-25 PY - 2013 AN - OPUS4-28049 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Höhm, S. A1 - Rohloff, M. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Dynamics of the formation of laser-induced periodic surface structures on dielectrics and semiconductors upon femtosecond laser pulse irradiation sequences N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica and silicon with multiple (NDPS) irradiation sequences consisting of linearly polarized femtosecond laser pulse pairs (pulse duration ~150 fs, central wavelength ~800 nm) is studied experimentally. Nearly equal-energy double-pulse sequences are generated allowing the temporal pulse delay Δt between the cross-polarized individual fs-laser pulses to be varied from -40 ps to +40 ps with a resolution of ~0.2 ps. The surface morphologies of the irradiated surface areas are characterized by means of scanning electron and scanning force microscopy. Particularly for dielectrics in the sub-ps delay range striking differences in the orientation and spatial characteristics of the LIPSS can be observed. For fused silica, a significant decrease of the LIPSS spatial periods from ~790 nm towards ~550 nm is demonstrated for delay changes of less than ~2 ps. In contrast, for silicon under similar irradiation conditions, the LIPSS periods remain constant (~760 nm) for delays up to 40 ps. The results prove the impact of laser-induced electrons in the conduction band of the solid and associated transient changes of the optical properties on fs-LIPSS formation. PY - 2013 DO - https://doi.org/10.1007/s00339-012-7184-z SN - 0947-8396 VL - 110 IS - 3 SP - 553 EP - 557 PB - Springer CY - Berlin AN - OPUS4-27787 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -