TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures on semiconductors and dielectrics T2 - EMRS Spring Meeting 2011, Symposium J "Laser materials processing for micro and nano applications" CY - Nice, France DA - 2011-05-09 PY - 2011 AN - OPUS4-23380 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures: importance of transient excitation stages T2 - SPIE Conference on Optics+Optoelktronics 2011, Conference "Damage to VUV, EUV and X-ray Optics (XDAM3)" CY - Prague, Czech Republic DA - 2011-04-18 PY - 2011 AN - OPUS4-23549 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Rosenfeld, A. A1 - Krüger, Jörg T1 - On the role of surface plasmon polaritons in the formation of laser-induced periodic surface structures upon irradiation of silicon by femtosecond-laser pulses N2 - The formation of nearly wavelength-sized laser-induced periodic surface structures (LIPSSs) on single-crystalline silicon upon irradiation with single or multiple femtosecond-laser pulses (pulse duration τ=130 fs and central wavelength λ=800 nm) in air is studied experimentally and theoretically. In our theoretical approach, we model the LIPSS formation by combining the generally accepted first-principles theory of Sipe and co-workers with a Drude model in order to account for transient intrapulse changes in the optical properties of the material due to the excitation of a dense electron-hole plasma. Our results are capable to explain quantitatively the spatial periods of the LIPSSs being somewhat smaller than the laser wavelength, their orientation perpendicular to the laser beam polarization, and their characteristic fluence dependence. Moreover, evidence is presented that surface plasmon polaritons play a dominant role during the initial stage of near-wavelength-sized periodic surface structures in femtosecond-laser irradiated silicon, and it is demonstrated that these LIPSSs can be formed in silicon upon irradiation by single femtosecond-laser pulses. KW - Ab initio calculations KW - Elemental semiconductors KW - High-speed optical techniques KW - Laser beam effects KW - Polaritons KW - Silicon KW - Solid-state plasma KW - Surface plasmons KW - Surface structure PY - 2009 DO - https://doi.org/10.1063/1.3261734 SN - 0021-8979 SN - 1089-7550 VL - 106 IS - 10 SP - 104910-1 - 104910-5 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-20453 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Fs-laser processing of metals: pulse duration effects and the role of air ionization T2 - COLA 2009, 10th International Conference on Laser Ablation CY - Singapore DA - 2009-11-22 PY - 2009 AN - OPUS4-20490 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Near-IR femtosecond and VUV nanosecond laser processing of TeO2 crystals in air T2 - SPIE Photonics West Conference: Laser Applications in Microelectronics and Optoelectronics Manufacturing XV CY - San Francisco, CA, USA DA - 2010-01-25 PY - 2010 AN - OPUS4-20558 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Beke, S. A1 - Sugioka, K. A1 - Midorikawa, K. A1 - Péter, Á. A1 - Nánai, L. A1 - Bonse, Jörn T1 - Characterization of the ablation of TeO2 crystals in air with femtosecond laser pulses N2 - Femtosecond (fs) laser pulse ablation (pulse duration of 150 fs, wavelength of 775 nm, repetition rate of 1 kHz) of single-crystalline TeO2 surfaces was performed in air using the direct focusing technique. The lateral and vertical dimensions of laser ablated craters as well as the laser damage thresholds were evaluated for different pulse numbers applied to the same spot. The joint observation using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters and also showed that the ablation threshold depends significantly on the number of laser pulses applied to the same spot due to incubation effects. The incubation effects change the absorption processes involved in fs-laser ablation of the transparent material from multiphoton absorption to a single-photon absorption. These results are discussed on the basis of recent models of the interaction of fs-laser pulses with dielectrics. KW - Femtosecond laser ablation KW - Damage threshold KW - TeO2 KW - Dielectrics PY - 2010 DO - https://doi.org/10.1088/0022-3727/43/2/025401 SN - 0022-3727 SN - 1361-6463 VL - 43 IS - 2 SP - 025401-1 - 025401-6 PB - IOP Publ. CY - Bristol AN - OPUS4-20665 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Structural morphological and dynamical aspects of fs-laser induced modification of crystalline silicon T2 - Eingeladener Vortrag im Seminar des Bereichs A des Max-Born-instituts, Adlershof CY - Berlin, Germany DA - 2010-01-12 PY - 2010 AN - OPUS4-20759 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Structural and morphological modifikation of crystalline silicon induced femtosecond laser pulses T2 - internes Seminar des Fraunhofer-Instituts für Keramische Technologien und Systeme (IKTS) CY - Dresden, Germany DA - 2010-01-20 PY - 2010 AN - OPUS4-20805 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures in semiconductors: recent approaches to explain their sub-wavelength periodicities T2 - Summer School 2010 des DFG Schwerpunktprogramms 1327 "Optisch erzeugte Sub-100 nm-Strukturen für biomedizinische und technische Anwendungen" CY - Hanover, Germany DA - 2010-09-20 PY - 2010 AN - OPUS4-21993 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Time-resolved imaging of bulk a-SiO2 upon various ultrashort excitation sequences T2 - SPIE Photonics West Conference: Frontiers in Ultrafast Optics: Biomedical, Scientific and Industrial Applications XI (Conference 7925) CY - San Francisco, CA, USA DA - 2011-01-22 PY - 2011 AN - OPUS4-22095 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn A1 - Solis, J. A1 - Spielmann, C. A1 - Lippert, T. A1 - Krüger, Jörg T1 - Damage mechanisms in polymers upon NIR femtosecond pulse laser irradiation: sub-threshold processes and their implications for laser safety applications N2 - This contribution investigates laser-induced damage of thin film and bulk polymer samples, with the focus on physical processes occurring close to the damage threshold. In-situ real-time reflectivity (RTR) measurements with picosecond (ps) and nanosecond (ns) temporal resolution were performed on thin polymer films on a timescale up to a few microseconds (µs). A model for polymer thin film damage is presented, indicating that irreversible chemical modification processes take place already below the fluence threshold for macroscopic damage. On dye-doped bulk polymer filters (as used for laser goggles), transmission studies using fs-and ps-laser pulses reveal the optical saturation behavior of the material and its relation to the threshold of permanent damage. Implications of the sub-threshold processes for laser safety applications will be discussed for thin film and bulk polymer damage. T2 - International high-power laser ablation conference CY - Santa Fe, USA DA - 2010-04-18 KW - Polymer KW - Laser damage KW - Ultrashort laser pulses KW - Time-resolved reflectivity measurements KW - Laser safety PY - 2010 UR - http://link.aip.org/link/?APCPCS/1278/56/1 SN - 978-0-7354-0828-9 DO - https://doi.org/10.1063/1.3507148 N1 - Serientitel: AIP conference proceedings – Series title: AIP conference proceedings IS - 1278 SP - 56 EP - 64 PB - American Institute of Physics CY - Melville, NY, USA AN - OPUS4-22156 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Sokolowski-Tinten, K. A1 - Barty, A. A1 - Boutet, S. A1 - Shymanovich, U. A1 - Chapman, H. A1 - Bogan, M. A1 - Marchesini, S. A1 - Hau-Riege, S. A1 - Stojanovic, N. A1 - Bonse, Jörn A1 - Rosandi, Y. A1 - Urbassek, H. M. A1 - Tobey, R. A1 - Ehrke, H. A1 - Cavalleri, A. A1 - Düsterer, S. A1 - Redlin, H. A1 - Frank, M. A1 - Bajt, S. A1 - Schulz, J. A1 - Seibert, M. A1 - Hajdu, J. A1 - Treusch, R. A1 - Bostedt, C. A1 - Hoener, M. A1 - Möller, T. T1 - Short-pulse laser induced transient structure formation and ablation studied with time-resolved coherent XUV-scattering T2 - International high-power laser ablation conference CY - Santa Fe, USA DA - 2010-04-18 KW - Femtosecond laser ablation KW - Free electron lasers KW - Coherent scattering PY - 2010 SN - 978-0-7354-0828-9 N1 - Serientitel: AIP conference proceedings – Series title: AIP conference proceedings IS - 1278 SP - 373 EP - 379 PB - American Institute of Physics CY - Melville, NY, USA AN - OPUS4-22230 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Brzezinka, Klaus-Werner A1 - Meixner, A.J. T1 - Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy N2 - The surface modification of single-crystalline silicon induced by single 130 femtosecond (fs) Ti:sapphire laser pulses (wavelength 800 nm) in air is investigated by means of micro Raman spectroscopy (?-RS), atomic force microscopy and scanning laser microscopy. Depending on the laser fluence, in some regions the studies indicate a thin amorphous top-layer as well as ablated and recrystallized zones. The single-pulse threshold fluences for melting, ablation and polycrystalline recrystallization are determined quantitatively. Several different topographical surface structures (rims and protrusions) are found. Their formation is discussed in the context of recent studies of the laser irradiation of silicon. In combination with a thin-film optical model, the thickness of the amorphous layer is determined by two independent and nondestructive optical methods to be in the order of several 10 nm. KW - Femtosecond laser ablation KW - Silicon KW - Raman spectroscopy KW - Atomic force microscopy KW - Laser scanning microscopy PY - 2004 DO - https://doi.org/10.1016/S0169-4332(03)00881-X SN - 0169-4332 SN - 1873-5584 VL - 221 IS - 1-4 SP - 215 EP - 230 PB - North-Holland CY - Amsterdam AN - OPUS4-3224 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - GEN A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang ED - Exarhos, G. T1 - Femtosecond laser damage in dielectric coatings N2 - Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed. T2 - 32nd Annual Boulder Damage Symposium CY - Boulder, CO, USA DA - 2000-10-16 PY - 2001 SN - 0-8194-4036-1 DO - https://doi.org/10.1117/12.425056 SN - 1605-7422 N1 - Serientitel: SPIE proceedings series – Series title: SPIE proceedings series IS - 4347 SP - 24 EP - 34 PB - International Society for Optical Engineering (SPIE) CY - Bellingham, Wash. AN - OPUS4-6013 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Baudach, Steffen A1 - Krüger, Jörg A1 - Kautek, Wolfgang A1 - Lenzner, Matthias T1 - Femtosecond laser ablation of silicon-modification thresholds and morphology N2 - We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm2 for all pulse durations and multiple-pulse irradiation was observed. For a duration of ,100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous. PY - 2002 DO - https://doi.org/10.1007/s003390100893 SN - 0947-8396 VL - 74 IS - 1 SP - 19 EP - 25 PB - Springer CY - Berlin AN - OPUS4-6328 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Jeschke, H.O. A1 - Garcia, M.E. A1 - Lenzner, Matthias A1 - Bonse, Jörn A1 - Krüger, Jörg A1 - Kautek, Wolfgang T1 - Laser ablation thresholds of silicon for different pulse durations: theory and experiment N2 - The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations =20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment. KW - Laser ablation KW - Pulse duration KW - Threshold of silicon PY - 2002 DO - https://doi.org/10.1016/S0169-4332(02)00458-0 SN - 0169-4332 SN - 1873-5584 VL - 197-198 SP - 839 EP - 844 PB - North-Holland CY - Amsterdam AN - OPUS4-6314 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Bonse, Jörn A1 - Wrobel, J. M. A1 - Brzezinka, Klaus-Werner A1 - Esser, N. A1 - Kautek, Wolfgang T1 - Femtosecond laser irradiation of indium phosphide in air: Raman spectroscopic and atomic force microscopic investigations KW - Femtosecond laser ablation KW - Indium phosphide KW - Raman spectroscopy KW - Atomic force microscopy PY - 2002 SN - 0169-4332 SN - 1873-5584 VL - 202 SP - 272 EP - 282 PB - North-Holland CY - Amsterdam AN - OPUS4-2645 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Stegemann, B. A1 - Richter, M. A1 - Schultz, C. A1 - Pahl, H.-U. A1 - Endert, H. A1 - Bonse, Jörn A1 - Rau, B. A1 - Quaschning, V. A1 - Fink, F. T1 - One wavelength fits all N2 - Structuring of Thin-film Solar Cells with a Single Laser Wavelength Structuring of a PV module into a number of cells is necessary to lower the current and to increase the voltage, and is typically accomplished with nanosecond laser pulses of different wavelengths. Duetothe many available laser sources, complex and expensive scribing Setups are necessary. To overcome this a concept for laser structuring of thin-film PV modules using a single wavelength allows prediction ofthe ablation behaviourfor a given laser pulse energy. KW - Thin-film solar cells KW - Nanosecond laser ablation KW - 532 nm wavelength KW - Laser scribing KW - Damage threshold PY - 2011 SN - 1869-8913 VL - 2 IS - 6 SP - 46 EP - 48 PB - Hüthig CY - Heidelberg AN - OPUS4-24158 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Analysis of femtosecond laser irradiation effects on amorphous hydrogenated hard carbon layers: Combining topometry, micro Raman spectroscopy and microsale mechanical indentation T2 - 11th International Conference on Laser Ablation (COLA 2011) CY - Playa del Carmen, Mexico DA - 2011-11-13 PY - 2011 AN - OPUS4-24189 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures: recent experimental and theoretical approaches T2 - 11th International Conference on Laser Ablation (COLA 2011) CY - Playa del Carmen, Mexico DA - 2011-11-13 PY - 2011 AN - OPUS4-24191 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - JOUR A1 - Rohloff, M. A1 - Das, S.K. A1 - Höhm, S. A1 - Grunwald, R. A1 - Rosenfeld, A. A1 - Krüger, Jörg A1 - Bonse, Jörn T1 - Formation of laser-induced periodic surface structures on fused silica upon multiple cross-polarized double-femtosecond-laser-pulse irradiation sequences N2 - The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica with multiple irradiation sequences consisting of five Ti:sapphire femtosecond (fs) laser pulse pairs (150 fs, 800 nm) is studied experimentally. A Michelson interferometer is used to generate near-equal-energy double-pulse sequences with a temporal pulse delay from -20 to +20 ps between the cross-polarized individual fs-laser pulses (~0.2 ps resolution). The results of multiple double-pulse irradiation sequences are characterized by means of Scanning Electron and Scanning Force Microscopy. Specifically in the sub-ps delay domain striking differences in the surface morphologies can be observed, indicating the importance of the laser-induced free-electron plasma in the conduction band of the solids for the formation of LIPSS. KW - Atomic force microscopy KW - Conduction bands KW - High-speed optical techniques KW - Laser beam effects KW - Scanning electron microscopy KW - Silicon compounds KW - Surface morphology PY - 2011 DO - https://doi.org/10.1063/1.3605513 SN - 0021-8979 SN - 1089-7550 VL - 110 IS - 1 SP - 014910-1 - 014910-4 PB - American Institute of Physics CY - Melville, NY AN - OPUS4-24049 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures T2 - International High-Power Laser Ablation Conference (HPLA 2012) CY - Santa Fe, NM, USA DA - 2012-04-30 PY - 2012 AN - OPUS4-24442 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Femtosecond laser-induced periodic surface structures on materials with varying band gap T2 - International workshop on laser-induced periodic surface structures CY - Enschede, Netherlands DA - 2011-10-11 PY - 2011 AN - OPUS4-24264 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Bonse, Jörn T1 - Novel Laser Structuring Method for Chalkopyrite Solar Cells T2 - Marie Sklodowska-Curie Symposium on the Foundations of Physical Chemistry CY - Warsaw, Poland DA - 2011-11-18 PY - 2011 AN - OPUS4-24920 LA - deu AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER - TY - CONF A1 - Richter, M. A1 - Schultz, C. A1 - Bonse, Jörn A1 - Pahl, H.-U. A1 - Endert, H. A1 - Rau, B. A1 - Schlatmann, R. A1 - Quaschning, V. A1 - Stegemann, B. A1 - Fink, F. T1 - Laser-ablation behavior of thin-film materials used in silicon and CIGSe based solar cells N2 - Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold. T2 - 26th European photovoltaic solar energy conference and exhibition CY - Hamburg, Germany DA - 05.09.011 KW - Laser processing KW - Ablation KW - Incubation KW - a-Si/my-Si KW - CIGS PY - 2011 SN - 3-936338-27-2 DO - https://doi.org/10.4229/26thEUPVSEC2011-3DV.2.8 SP - 2943 EP - 2946 AN - OPUS4-24997 LA - eng AD - Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin, Germany ER -